公开(公告)号：US07887978B2

公开(公告)日：2011-02-15

申请号：US12113559

申请日：2008-05-01

申请人： Uwe Griebenow ,  Martin Mazur ,  Wolfram Grundke ,  Andre Poock

发明人： Uwe Griebenow ,  Martin Mazur ,  Wolfram Grundke ,  Andre Poock

IPC分类号： G03F9/00

CPC分类号： G01N21/956 ,  G01N2021/95676 ,  G03F1/84

摘要： Mask defects, such as crystal growth defects and the like, may be efficiently detected and estimated at an early stage of their development by generating test images of the mask under consideration and inspecting the images on the basis of wafer inspection techniques in order to identify repeatedly occurring defects. In some illustrative embodiments, the exposure process for generating the mask images may be performed on the basis of different exposure parameters, such as exposure doses, in order to enhance the probability of detecting defects and also estimating the effect thereof depending on the varying exposure parameters. Consequently, increased reliability may be achieved compared to conventional direct mask inspection techniques.

摘要翻译： 通过产生所考虑的掩模的测试图像并且在晶片检查技术的基础上检查图像以便重复地识别掩模缺陷，例如晶体生长缺陷等，可以在其显影的早期阶段被有效地检测和估计 发生缺陷。 在一些说明性实施例中，用于产生掩模图像的曝光过程可以基于不同的曝光参数（例如曝光剂量）来执行，以增强检测缺陷的可能性，并且还根据变化的曝光参数来估计其效果 。 因此，与传统的直接掩模检查技术相比，可以实现增加的可靠性。

公开(公告)号：US20090274981A1

公开(公告)日：2009-11-05

申请号：US12113559

申请日：2008-05-01

申请人： Uwe Griebenow ,  Martin Mazur ,  Wolfram Grundke ,  Andre Poock

发明人： Uwe Griebenow ,  Martin Mazur ,  Wolfram Grundke ,  Andre Poock

IPC分类号： G03F7/20

CPC分类号： G01N21/956 ,  G01N2021/95676 ,  G03F1/84

摘要： Mask defects, such as crystal growth defects and the like, may be efficiently detected and estimated at an early stage of their development by generating test images of the mask under consideration and inspecting the images on the basis of wafer inspection techniques in order to identify repeatedly occurring defects. In some illustrative embodiments, the exposure process for generating the mask images may be performed on the basis of different exposure parameters, such as exposure doses, in order to enhance the probability of detecting defects and also estimating the effect thereof depending on the varying exposure parameters. Consequently, increased reliability may be achieved compared to conventional direct mask inspection techniques.

摘要翻译： 通过产生所考虑的掩模的测试图像并且在晶片检查技术的基础上检查图像以便重复地识别掩模缺陷，例如晶体生长缺陷等，可以在其显影的早期阶段被有效地检测和估计 发生缺陷。 在一些说明性实施例中，用于产生掩模图像的曝光过程可以基于不同的曝光参数（例如曝光剂量）来执行，以增强检测缺陷的可能性，并且还根据变化的曝光参数来估计其效果 。 因此，与传统的直接掩模检查技术相比，可以实现增加的可靠性。

公开(公告)号：US08660681B2

公开(公告)日：2014-02-25

申请号：US13006522

申请日：2011-01-14

申请人： Andre Poock ,  Daniel Zschaebitz ,  Heike Scholtz

发明人： Andre Poock ,  Daniel Zschaebitz ,  Heike Scholtz

IPC分类号： G06F19/00

CPC分类号： G03F7/70525

摘要： A process monitoring system may detect out-of-control situations on the basis of a single criterion for a plurality of different lithography processes. To this end, each data set related to a specific type of lithography process may be processed so as to determine relative data, which may be centered around the same mean value for each of the different process types for a standard control situation.

摘要翻译： 过程监控系统可以基于多个不同光刻过程的单个标准来检测失控情况。 为此，可以处理与特定类型的光刻处理相关的每个数据集，以便确定相对数据，其可以围绕针对标准控制情况的每个不同过程类型的相同平均值居中。

公开(公告)号：US20120004758A1

公开(公告)日：2012-01-05

申请号：US13006522

申请日：2011-01-14

申请人： Andre Poock ,  Daniel Zschaebitz ,  Heike Scholtz

发明人： Andre Poock ,  Daniel Zschaebitz ,  Heike Scholtz

IPC分类号： G06F19/00

CPC分类号： G03F7/70525

摘要： A process monitoring system may detect out-of-control situations on the basis of a single criterion for a plurality of different lithography processes. To this end, each data set related to a specific type of lithography process may be processed so as to determine relative data, which may be centered around the same mean value for each of the different process types for a standard control situation.

摘要翻译： 过程监控系统可以基于多个不同光刻过程的单个标准来检测失控情况。 为此，可以处理与特定类型的光刻处理相关的每个数据集，以便确定相对数据，其可以围绕针对标准控制情况的每个不同过程类型的相同平均值居中。

公开(公告)号：US07977225B2

公开(公告)日：2011-07-12

申请号：US12417978

申请日：2009-04-03

申请人： Andre Poock ,  Jan Hoentschel

发明人： Andre Poock ,  Jan Hoentschel

IPC分类号： H01L21/425

CPC分类号： H01L21/823814 ,  H01L21/823807 ,  Y10S438/942 ,  Y10S438/944

摘要： In extremely scaled semiconductor devices, an asymmetric transistor configuration may be established on the basis of tilted implantation processes with increased resist height and/or tilt angles during tilted implantation processes by providing an asymmetric mask arrangement for masked transistor elements. For this purpose, the implantation mask may be shifted by an appropriate amount so as to enhance the overall blocking effect for the masked transistors while reducing any shadowing effect of the implantation masks for the non-masked transistors. The shift of the implantation masks may be accomplished by performing the automatic alignment procedure on the basis of “shifted” target values or by providing asymmetrically arranged photolithography masks.

摘要翻译： 在非常规模的半导体器件中，可以通过提供用于被掩模的晶体管元件的不对称掩模布置，在倾斜注入工艺期间，在倾斜注入工艺的基础上，增加抗蚀剂高度和/或倾斜角度来建立非对称晶体管配置。 为此，可以将注入掩模移动适当的量，以便增强掩模晶体管的总体阻塞效应，同时减少非掩蔽晶体管的注入掩模的任何阴影效应。 注入掩模的移位可以通过基于“移位的”目标值执行自动对准过程或通过提供不对称布置的光刻掩模来实现。

公开(公告)号：US20100112468A1

公开(公告)日：2010-05-06

申请号：US12575003

申请日：2009-10-07

申请人： Andre Poock ,  Rene Wirtz

发明人： Andre Poock ,  Rene Wirtz

IPC分类号： G03F7/20 ,  G03B27/58 ,  G03B27/68

CPC分类号： G03F7/707

摘要： A substrate support system for process tools, such as lithography tools, comprises a configuration in which a local height level adjustment may be accomplished. Thus, upon detecting a non-allowable height level, the corresponding portion of the substrate support surface may be re-adjusted. Hence, the focus conditions of advanced exposure processes may be significantly enhanced, thereby providing superior process results and also increasing tool utilization.

摘要翻译： 用于诸如光刻工具的处理工具的衬底支撑系统包括其中可以实现局部高度调节的构造。 因此，在检测到不允许的高度水平时，可以重新调整衬底支撑表面的对应部分。 因此，可以显着增强先进曝光工艺的重点条件，从而提供优异的工艺结果并提高工具利用率。

公开(公告)号：US20090325355A1

公开(公告)日：2009-12-31

申请号：US12417978

申请日：2009-04-03

申请人： Andre Poock ,  Jan Hoentschel

发明人： Andre Poock ,  Jan Hoentschel

IPC分类号： H01L21/426 ,  H01L21/336

CPC分类号： H01L21/823814 ,  H01L21/823807 ,  Y10S438/942 ,  Y10S438/944

摘要： In extremely scaled semiconductor devices, an asymmetric transistor configuration may be established on the basis of tilted implantation processes with increased resist height and/or tilt angles during tilted implantation processes by providing an asymmetric mask arrangement for masked transistor elements. For this purpose, the implantation mask may be shifted by an appropriate amount so as to enhance the overall blocking effect for the masked transistors while reducing any shadowing effect of the implantation masks for the non-masked transistors. The shift of the implantation masks may be accomplished by performing the automatic alignment procedure on the basis of “shifted” target values or by providing asymmetrically arranged photolithography masks.

摘要翻译： 在非常规模的半导体器件中，可以通过提供用于被掩模的晶体管元件的不对称掩模布置，在倾斜注入工艺期间，在倾斜注入工艺的基础上，增加抗蚀剂高度和/或倾斜角度来建立非对称晶体管配置。 为此，可以将注入掩模移动适当的量，以便增强掩模晶体管的总体阻塞效应，同时减少非掩蔽晶体管的注入掩模的任何阴影效应。 注入掩模的移位可以通过基于“移位的”目标值执行自动对准过程或通过提供不对称布置的光刻掩模来实现。