公开(公告)号：US09054494B2

公开(公告)日：2015-06-09

申请号：US14151176

申请日：2014-01-09

申请人： V TECHNOLOGY CO., LTD.

发明人： Koichi Kajiyama ,  Michinobu Mizumura ,  Tetsuya Kiguchi ,  Daisuke Ishii ,  Yoshikatsu Yanagawa ,  Masami Takimoto

IPC分类号： H01S3/10 ,  H01S3/11 ,  H01S3/107 ,  H01S3/08 ,  H01S3/115 ,  H01S3/092 ,  H01S3/16 ,  H01S3/23 ,  H01S3/00

CPC分类号： H01S3/11 ,  H01S3/005 ,  H01S3/08054 ,  H01S3/092 ,  H01S3/10038 ,  H01S3/107 ,  H01S3/115 ,  H01S3/1611 ,  H01S3/1643 ,  H01S3/2308

摘要： A pulsed laser oscillator includes at least one first electrooptical element that polarizes light according to an applied voltage and a voltage control unit that applies a voltage to the first electrooptical element and controls the voltage. The voltage control unit changes over time a voltage value applied to the first electrooptical element, to control a pulse width of laser light.

摘要翻译： 脉冲激光振荡器包括至少一个根据施加的电压使光偏振的第一电光元件和向第一电光元件施加电压并控制电压的电压控制单元。 电压控制单元随时间变化施加到第一电光元件的电压值，以控制激光的脉冲宽度。

公开(公告)号：US20140126591A1

公开(公告)日：2014-05-08

申请号：US14151176

申请日：2014-01-09

申请人： V TECHNOLOGY CO., LTD.

发明人： Koichi KAJIYAMA ,  Michinobu Mizumura ,  Tetsuya Kiguchi ,  Daisuke Ishii ,  Yoshikatsu Yanagawa ,  Masami Takimoto

IPC分类号： H01S3/11

CPC分类号： H01S3/11 ,  H01S3/005 ,  H01S3/08054 ,  H01S3/092 ,  H01S3/10038 ,  H01S3/107 ,  H01S3/115 ,  H01S3/1611 ,  H01S3/1643 ,  H01S3/2308

摘要： A pulsed laser oscillator includes at least one first electrooptical element that polarizes light according to an applied voltage and a voltage control unit that applies a voltage to the first electrooptical element and controls the voltage. The voltage control unit changes over time a voltage value applied to the first electrooptical element, to control a pulse width of laser light.

摘要翻译： 脉冲激光振荡器包括至少一个根据施加的电压使光偏振的第一电光元件和向第一电光元件施加电压并控制电压的电压控制单元。 电压控制单元随时间变化施加到第一电光元件的电压值，以控制激光的脉冲宽度。

公开(公告)号：US10535778B2

公开(公告)日：2020-01-14

申请号：US16239454

申请日：2019-01-03

申请人： V TECHNOLOGY CO., LTD.

发明人： Michinobu Mizumura ,  Makoto Hatanaka ,  Tetsuya Kiguchi

IPC分类号： H01L29/786 ,  H01L21/20 ,  H01L27/12 ,  H01L29/04 ,  H01L21/02 ,  H01L21/67 ,  H01L29/66

摘要： The present invention provides a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, which are laminated on a substrate. The semiconductor layer is a polysilicon thin film. The polysilicon thin film in regions corresponding to the source electrode and the drain electrode has a smaller crystal grain size than that of the polysilicon thin film in a channel region between the source electrode and the drain electrode.

公开(公告)号：US10211343B2

公开(公告)日：2019-02-19

申请号：US15583726

申请日：2017-05-01

申请人： V TECHNOLOGY CO., LTD.

发明人： Michinobu Mizumura ,  Makoto Hatanaka ,  Tetsuya Kiguchi

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/67 ,  H01L27/12 ,  H01L29/04 ,  H01L29/66 ,  H01L29/786

摘要： The present invention provides a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, which are laminated on a substrate. The semiconductor layer is a polysilicon thin film. The polysilicon thin film in regions corresponding to the source electrode and the drain electrode has a smaller crystal grain size than that of the polysilicon thin film in a channel region between the source electrode and the drain electrode.