Non-blocked phosphorescent OLEDs
    7.
    发明申请
    Non-blocked phosphorescent OLEDs 有权
    非阻塞磷光OLED

    公开(公告)号:US20060240279A1

    公开(公告)日:2006-10-26

    申请号:US11110776

    申请日:2005-04-21

    IPC分类号: H01L51/54 H05B33/12

    摘要: An organic light emitting diode (OLED) architecture in which efficient operation is achieved without requiring a blocking layer by locating the recombination zone close to the hole transport side of the emissive layer. Aryl-based hosts and Ir-based dopants with suitable concentrations result in an efficient phosphorescent OLED structure. Previously, blocking layer utilization in phosphorescent OLED architectures was considered essential to avoid exciton and hole leakage from the emissive layer, and thus keep the recombination zone inside the emissive layer to provide high device efficiency and a pure emission spectrum.

    摘要翻译: 一种有机发光二极管(OLED)结构,其中通过将复合区定位在靠近发射层的空穴传输侧的方式实现高效的操作而不需要阻挡层。 基于芳基的主体和具有合适浓度的Ir基掺杂剂导致有效的磷光OLED结构。 以前,磷光OLED结构中的阻挡层利用被认为是避免发射层发生激子和空穴泄漏的关键因素,因此保持发射层内部的复合区域,以提供高的器件效率和纯发射光谱。

    Non-blocked phosphorescent OLEDs
    10.
    发明授权
    Non-blocked phosphorescent OLEDs 有权
    非阻塞磷光OLED

    公开(公告)号:US07807275B2

    公开(公告)日:2010-10-05

    申请号:US11110776

    申请日:2005-04-21

    IPC分类号: H01L51/54

    摘要: An organic light emitting diode (OLED) architecture in which efficient operation is achieved without requiring a blocking layer by locating the recombination zone close to the hole transport side of the emissive layer. Aryl-based hosts and Ir-based dopants with suitable concentrations result in an efficient phosphorescent OLED structure. Previously, blocking layer utilization in phosphorescent OLED architectures was considered essential to avoid exciton and hole leakage from the emissive layer, and thus keep the recombination zone inside the emissive layer to provide high device efficiency and a pure emission spectrum.

    摘要翻译: 一种有机发光二极管(OLED)结构,其中通过将复合区定位在靠近发射层的空穴传输侧的方式实现高效的操作而不需要阻挡层。 基于芳基的主体和具有合适浓度的Ir基掺杂剂导致有效的磷光OLED结构。 以前,磷光OLED结构中的阻挡层利用被认为是避免发射层发生激子和空穴泄漏的关键因素,因此保持发射层内部的复合区域,以提供高的器件效率和纯发射光谱。