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公开(公告)号：US07964418B2
公开(公告)日：2011-06-21
申请号：US11893416
申请日：2007-08-16
IPC分类号： H01L21/66
CPC分类号： H01L31/0322 , H01L31/035281 , H01L31/046 , H01L31/0463 , H01L31/048 , H01L31/055 , H01L31/0749 , Y02E10/52 , Y02E10/541 , Y02P70/521
摘要： A method of manufacturing a semiconductor layer is provided. In a first deposition during a first period of time, at least one Group IIIA element and at least one Group VIA element are deposited on a substrate or on a layer optional disposed on the substrate such as a back-electrode. During a second deposition during a second period of time, at least one Group IB element and the at least one group VIA element are deposited on the substrate or the optional layer. The one Group IB element combines with the Group VIA element to form a IB2VIA composition. A first deposition state is monitored, during the second deposition by making a first plurality of measurements of a first deposition state. The second deposition is terminated or attenuated based on a function of the first plurality of measurements of the indicia of the first deposition state.
摘要翻译： 提供一种制造半导体层的方法。 在第一时间段内的第一沉积中，至少一个IIIA族元素和至少一个第VIA族元素沉积在衬底上或可选择地设置在诸如背面电极的衬底上的层上。 在第二时间段期间的第二沉积期间，至少一个IB族元件和至少一个VIA元件沉积在基底或可选层上。 一组IB元素与VIA元素组合形成IB2VIA组合物。 通过进行第一沉积状态的第一多个测量，在第二沉积期间监测第一沉积状态。 基于第一沉积状态的标记的第一多个测量的函数，第二沉积被终止或衰减。
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公开(公告)号：US08110828B2
公开(公告)日：2012-02-07
申请号：US13157058
申请日：2011-06-09
IPC分类号： H01L29/08
CPC分类号： H01L31/0322 , H01L31/035281 , H01L31/046 , H01L31/0463 , H01L31/048 , H01L31/055 , H01L31/0749 , Y02E10/52 , Y02E10/541 , Y02P70/521
摘要： A method of manufacturing a semiconductor layer is provided. In a first deposition during a first period of time, at least one Group IIIA element and at least one Group VIA element are deposited on a substrate or on a layer optional disposed on the substrate such as a back-electrode. During a second deposition during a second period of time, at least one Group IB element and the at least one group VIA element are deposited on the substrate or the optional layer. The one Group IB element combines with the Group VIA element to form a IB2VIA composition. A first deposition state is monitored, during the second deposition by making a first plurality of measurements of a first deposition state. The second deposition is terminated or attenuated based on a function of the first plurality of measurements of the indicia of the first deposition state.
摘要翻译： 提供一种制造半导体层的方法。 在第一时间段内的第一沉积中，至少一个IIIA族元素和至少一个第VIA族元素沉积在衬底上或可选择地设置在诸如背面电极的衬底上的层上。 在第二时间段期间的第二沉积期间，至少一个IB族元件和至少一个VIA元件沉积在基底或可选层上。 一组IB元素与VIA元素组合形成IB2VIA组合物。 通过进行第一沉积状态的第一多个测量，在第二沉积期间监测第一沉积状态。 基于第一沉积状态的标记的第一多个测量的函数，第二沉积被终止或衰减。
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公开(公告)号：US20110259391A1
公开(公告)日：2011-10-27
申请号：US13157058
申请日：2011-06-09
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/0322 , H01L31/035281 , H01L31/046 , H01L31/0463 , H01L31/048 , H01L31/055 , H01L31/0749 , Y02E10/52 , Y02E10/541 , Y02P70/521
摘要： A method of manufacturing a semiconductor layer is provided. In a first deposition during a first period of time, at least one Group IIIA element and at least one Group VIA element are deposited on a substrate or on a layer optional disposed on the substrate such as a back-electrode. During a second deposition during a second period of time, at least one Group IB element and the at least one group VIA element are deposited on the substrate or the optional layer. The one Group IB element combines with the Group VIA element to form a IB2VIA composition. A first deposition state is monitored, during the second deposition by making a first plurality of measurements of a first deposition state. The second deposition is terminated or attenuated based on a function of the first plurality of measurements of the indicia of the first deposition state.
摘要翻译： 提供一种制造半导体层的方法。 在第一时间段内的第一沉积中，至少一个IIIA族元素和至少一个第VIA族元素沉积在衬底上或可选择地设置在诸如背面电极的衬底上的层上。 在第二时间段期间的第二沉积期间，至少一个IB族元件和至少一个VIA元件沉积在基底或可选层上。 一组IB元素与VIA元素组合形成IB2VIA组合物。 通过进行第一沉积状态的第一多个测量，在第二沉积期间监测第一沉积状态。 基于第一沉积状态的标记的第一多个测量的函数，第二沉积被终止或衰减。
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公开(公告)号：US20080041439A1
公开(公告)日：2008-02-21
申请号：US11893416
申请日：2007-08-16
IPC分类号： H01L31/042 , B05C11/00
CPC分类号： H01L31/0322 , H01L31/035281 , H01L31/046 , H01L31/0463 , H01L31/048 , H01L31/055 , H01L31/0749 , Y02E10/52 , Y02E10/541 , Y02P70/521
摘要： A method of manufacturing a semiconductor layer is provided. In a first deposition during a first period of time, at least one Group IIIA element and at least one Group VIA element are deposited on a substrate or on a layer optional disposed on the substrate such as a back-electrode. During a second deposition during a second period of time, at least one Group IB element and the at least one group VIA element are deposited on the substrate or the optional layer. The one Group IB element combines with the Group VIA element to form a IB2VIA composition. A first deposition state is monitored, during the second deposition by making a first plurality of measurements of a first deposition state. The second deposition is terminated or attenuated based on a function of the first plurality of measurements of the indicia of the first deposition state.
摘要翻译： 提供一种制造半导体层的方法。 在第一时间段内的第一沉积中，至少一个IIIA族元素和至少一个第VIA族元素沉积在衬底上或可选择地设置在诸如背面电极的衬底上的层上。 在第二时间段期间的第二沉积期间，至少一个IB族元件和至少一个VIA元件沉积在基底或可选层上。 一组IB元素与组VIA元素组合以形成IB＆lt; 2＆gt; VIA组合物。 通过进行第一沉积状态的第一多个测量，在第二沉积期间监测第一沉积状态。 基于第一沉积状态的标记的第一多个测量的函数，第二沉积被终止或衰减。
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公开(公告)号：US20070238202A1
公开(公告)日：2007-10-11
申请号：US11393423
申请日：2006-03-30
申请人： Joseph Ranish , Tarpan Dixit , Dean Jennings , Balasubramanian Ramachandran , Aaron Hunter , Wolfgang Aderhold , Bruce Adams , Wen Chang
发明人： Joseph Ranish , Tarpan Dixit , Dean Jennings , Balasubramanian Ramachandran , Aaron Hunter , Wolfgang Aderhold , Bruce Adams , Wen Chang
CPC分类号： H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： The present invention generally relates to methods for the rapid thermal processing (RTP) of a substrate. Embodiments of the invention include controlling a thermal process using either a real-time adaptive control algorithm or by using a control algorithm that is selected from a suite of fixed control algorithms designed for a variety of substrate types. Selection of the control algorithm is based on optical properties of the substrate measured during the thermal process. In one embodiment, a combination of control algorithms are used, wherein the majority of lamp groupings are controlled with a fixed control algorithm and a substantially smaller number of lamp zones are controlled by an adaptive control algorithm.
摘要翻译： 本发明一般涉及用于衬底的快速热处理（RTP）的方法。 本发明的实施例包括使用实时自适应控制算法或通过使用从针对各种基板类型设计的一套固定控制算法中选择的控制算法来控制热处理。 控制算法的选择基于在热处理期间测量的衬底的光学性质。 在一个实施例中，使用控制算法的组合，其中大多数灯分组由固定控制算法控制，并且通过自适应控制算法来控制基本上较少数量的灯区。
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公开(公告)号：US07398693B2
公开(公告)日：2008-07-15
申请号：US11393423
申请日：2006-03-30
申请人： Joseph Michael Ranish , Tarpan Dixit , Dean Jennings , Balasubramanian Ramachandran , Aaron Hunter , Wolfgang Aderhold , Bruce Adams , Wen Teh Chang
发明人： Joseph Michael Ranish , Tarpan Dixit , Dean Jennings , Balasubramanian Ramachandran , Aaron Hunter , Wolfgang Aderhold , Bruce Adams , Wen Teh Chang
IPC分类号： G01L9/06
CPC分类号： H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： The present invention generally relates to methods for the rapid thermal processing (RTP) of a substrate. Embodiments of the invention include controlling a thermal process using either a real-time adaptive control algorithm or by using a control algorithm that is selected from a suite of fixed control algorithms designed for a variety of substrate types. Selection of the control algorithm is based on optical properties of the substrate measured during the thermal process. In one embodiment, a combination of control algorithms are used, wherein the majority of lamp groupings are controlled with a fixed control algorithm and a substantially smaller number of lamp zones are controlled by an adaptive control algorithm.
摘要翻译： 本发明一般涉及用于衬底的快速热处理（RTP）的方法。 本发明的实施例包括使用实时自适应控制算法或通过使用从针对各种基板类型设计的一套固定控制算法中选择的控制算法来控制热处理。 控制算法的选择基于在热处理期间测量的衬底的光学性质。 在一个实施例中，使用控制算法的组合，其中大多数灯分组由固定控制算法控制，并且通过自适应控制算法来控制基本上较少数量的灯区。
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7.发明申请公开(公告)号：US20060086713A1
公开(公告)日：2006-04-27
申请号：US10974003
申请日：2004-10-26
CPC分类号： F27B17/0025 , F27B5/04 , F27D21/0014 , H01L21/67115 , H01L21/67248 , H05B3/68
摘要： A rapid thermal processing (RTP) system including a transmission pyrometer monitoring the temperature dependent absorption of the silicon wafer for radiation from the RTP lamps at a reduced power level. A look-up table is created relating unnormalized values of photodetector photocurrents with wafer and radiant lamp temperatures. A calibrating step measures the photocurrent with known wafer and lamp temperatures and all photocurrents measured thereafter are accordingly normalized. The transmission pyrometer may be used for closed loop control for thermal treatments below 500° C. or used in the pre-heating phase for a higher temperature process including radiation pyrometry in closed loop control. The pre-heating temperature ramp rate may be controlled by measuring the initial ramp rate and readjusting the lamp power accordingly. Radiation and transmission pyrometers may be included in an integrated structure with a beam splitter dividing radiation from the wafer.
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8.发明授权公开(公告)号：US07112763B2
公开(公告)日：2006-09-26
申请号：US10974003
申请日：2004-10-26
申请人： Aaron Hunter , Rajesh S. Ramanujam , Balasubramanian Ramachandran , Corina Elena Tanasa , Tarpan Dixit
发明人： Aaron Hunter , Rajesh S. Ramanujam , Balasubramanian Ramachandran , Corina Elena Tanasa , Tarpan Dixit
IPC分类号： F27D11/00
CPC分类号： F27B17/0025 , F27B5/04 , F27D21/0014 , H01L21/67115 , H01L21/67248 , H05B3/68
摘要： A rapid thermal processing (RTP) system including a transmission pyrometer monitoring the temperature dependent absorption of the silicon wafer for radiation from the RTP lamps at a reduced power level. A look-up table is created relating unnormalized values of photodetector photocurrents with wafer and radiant lamp temperatures. A calibrating step measures the photocurrent with known wafer and lamp temperatures and all photocurrents measured thereafter are accordingly normalized. The transmission pyrometer may be used for closed loop control for thermal treatments below 500° C. or used in the pre-heating phase for a higher temperature process including radiation pyrometry in closed loop control. The pre-heating temperature ramp rate may be controlled by measuring the initial ramp rate and readjusting the lamp power accordingly. Radiation and transmission pyrometers may be included in an integrated structure with a beam splitter dividing radiation from the wafer.
摘要翻译： 快速热处理（RTP）系统，其包括透射高温计，其以降低的功率水平监测来自RTP灯的辐射的硅晶片的温度依赖性吸收。 创建了与晶圆和辐射灯温度相关的光电检测器光电流的非标准化值的查找表。 校准步骤测量具有已知晶片和灯温度的光电流，并且随后测量的所有光电流相应地被归一化。 传输高温计可用于低于500°C的热处理的闭环控制，或用于预热阶段，用于更高温度的过程，包括闭环控制中的辐射高温计。 可以通过测量初始斜坡速率并相应地重新调整灯泡功率来控制预热温度升高速率。 辐射和透射高温计可以包括在具有分束器的分离器的集成结构中。
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