公开(公告)号：USD893088S1

公开(公告)日：2020-08-11

申请号：US29656586

申请日：2018-07-13

申请人： Veeco Instruments Inc.

设计人： Premkumar Suhandira Viran ,  Hao Chen ,  Joe Lamb

公开(公告)号：US09761671B2

公开(公告)日：2017-09-12

申请号：US14585426

申请日：2014-12-30

申请人： Veeco Instruments, Inc.

发明人： Ajit Paranjpe ,  Craig Metzner ,  Joe Lamb

IPC分类号： H01L21/18 ,  H01L21/304 ,  H01L21/683 ,  H01L29/20 ,  H01L33/00

CPC分类号： H01L29/2003 ,  H01L21/187 ,  H01L21/304 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0075 ,  H01L33/0079 ,  H01L2221/68368 ,  H01L2221/68381

摘要： A spalling process can be employed to generate a fracture at a predetermined depth within a high quality crystalline nitride substrate, such as a bulk GaN substrate. A first crystalline conductive film layer can be separated, along the line of fracture, from the crystalline nitride substrate and subsequently bonded to a layered stack including a traditional lower-cost substrate. If the spalled surface of the first crystalline conductive film layer is exposed in the resulting structure, the structure can act as a substrate on which high quality GaN-based devices can be grown.

公开(公告)号：US20150187888A1

公开(公告)日：2015-07-02

申请号：US14585426

申请日：2014-12-30

申请人： VEECO INSTRUMENTS, INC.

发明人： Ajit Paranjpe ,  Craig Metzner ,  Joe Lamb

IPC分类号： H01L29/20 ,  H01L21/683 ,  H01L33/12 ,  H01L33/00 ,  H01L33/32 ,  H01L21/02 ,  H01L21/18

CPC分类号： H01L29/2003 ,  H01L21/187 ,  H01L21/304 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0075 ,  H01L33/0079 ,  H01L2221/68368 ,  H01L2221/68381

摘要： A spalling process can be employed to generate a fracture at a predetermined depth within a high quality crystalline nitride substrate, such as a bulk GaN substrate. A first crystalline conductive film layer can be separated, along the line of fracture, from the crystalline nitride substrate and subsequently bonded to a layered stack including a traditional lower-cost substrate. If the spalled surface of the first crystalline conductive film layer is exposed in the resulting structure, the structure can act as a substrate on which high quality GaN-based devices can be grown.

摘要翻译： 可以采用剥落工艺来在诸如体GaN衬底的高质量结晶氮化物衬底内的预定深度处产生断裂。 第一结晶导电膜层可以沿着断裂线从结晶氮化物衬底分离，并随后结合到包括传统低成本衬底的层叠堆叠。 如果第一结晶导电膜层的剥离表面在所得到的结构中暴露，则该结构可以用作可以生长高质量GaN基器件的衬底。