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公开(公告)号：US20220243150A1
公开(公告)日：2022-08-04
申请号：US17596199
申请日：2020-06-15
发明人： LILI WANG , AIPING WU , LAISHENG SUN , YI-CHIA LEE , YUANMEI CAO
摘要： Compositions and methods useful for removing residue and photoresist from a semiconductor substrate comprising: from about 5 to about 60% by wt. of water; from about 10 to about 90% by wt. of a water-miscible organic solvent; from about 5 to about 90% by wt. of at least one alkanolamine; from about 0.05 to about 20% by wt. of at least one polyfunctional organic acid; and from about 0.1 to about 10% by wt. of at least one phenol-type corrosion inhibitor, wherein the composition is substantially free of hydroxylamine.
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公开(公告)号：US20220298182A1
公开(公告)日：2022-09-22
申请号：US17754165
申请日：2020-09-28
发明人： Jhih Kuei Ge , YI-CHIA LEE , WEN DAR LIU , AIPING WU , LAISHENG SUN
IPC分类号： C07F9/06 , C07F7/08 , C09K13/06 , H01L21/02 , H01L21/311
摘要： The disclosed and claimed subject matter is directed to an etching composition that includes (A) phosphoric acid and (B) a mixture that includes (i) a silicon-containing compound and (ii) an aqueous solvent. In some embodiments, the etching compositions include additional ingredients. The etching compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.
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公开(公告)号：US20220380705A1
公开(公告)日：2022-12-01
申请号：US17753256
申请日：2020-09-24
发明人： LAISHENG SUN , LILI WANG , AIPING WU , YI-CHIA LEE , TIANNIU CHEN
摘要： A method and cleaning composition for microelectronic devices or semiconductor substrates including at least one N alkanolamine; at least one hydroxylamine or derivatives of hydroxylamine or mixtures thereof; at least one polyfunctional organic acid with at least two carboxylic acid groups and water. The cleaning compositions can further include at least one corrosion inhibitor.
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公开(公告)号：US20220333044A1
公开(公告)日：2022-10-20
申请号：US17753529
申请日：2020-09-28
发明人： YUANMEI CAO , MICHAEL PHENIS , LILI WANG , LAISHENG SUN , AIPING WU
摘要： Cleaning compositions and the method of using the same are disclosed, where the compositions include one or more alkanolamines, one or more ether alcohol solvents or aromatic containing alcohol, one or more corrosion inhibitors, and optionally one or more secondary solvents.
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公开(公告)号：US20220298417A1
公开(公告)日：2022-09-22
申请号：US17596078
申请日：2020-06-12
发明人： Wen Dar Liu , YI-CHIA LEE , CHUNG-YI CHANG , AIPING WU , LAISHENG SUN
IPC分类号： C09K13/06 , H01L21/311 , H01L21/3213
摘要： Described herein is an etching solution suitable for the selective removal of silicon over p-doped silicon and/or silicon-germanium from a microelectronic device, having water; at least one of NH4OH or a quaternary ammonium hydroxide; at least one compound selected from benzoquinone or a derivative of benzoquinone; quinoline or a derivative of quinoline; an unsubstituted or substituted C6-20 aliphatic acid; a C4-12 alkylamine; and a polyalkylenimine; optionally at least one water-miscible organic solvent; and optionally, at least one compound selected from an alkanolamine and a polyamine.
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公开(公告)号：US20220228062A1
公开(公告)日：2022-07-21
申请号：US17656828
申请日：2022-03-28
发明人： Jhih Kuei Ge , YI-CHIA LEE , WEN DAR LIU , AIPING WU , LAISHENG SUN
IPC分类号： C09K13/06 , H01L21/311
摘要： The disclosed and claimed subject matter is directed to an etching composition that includes (A) phosphoric acid and (B) a mixture that includes (i) a silicon-containing compound and (ii) an aqueous solvent. In some embodiments, the etching compositions include additional ingredients. The etching compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.
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