公开(公告)号：US20200062787A1

公开(公告)日：2020-02-27

申请号：US16547468

申请日：2019-08-21

申请人： Versum Materials US, LLC

发明人： Robert G. Ridgeway ,  Raymond N. Vrtis ,  Xinjian Lei ,  Madhukar B. Rao ,  Steven Gerard Mayorga ,  Neil Osterwalder ,  Manchao Xiao ,  Meiliang Wang

IPC分类号： C07F7/08 ,  B01D3/00

摘要： A method for producing an alkenyl or alkynyl-containing organosilicon precursor composition, the method comprising the steps of distilling at least once a composition comprising an alkenyl or alkynyl-containing organosilicon compound having the formula RnSiR14−n wherein R is selected a linear or branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group; R1 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C3 to C10 cyclic alkyl group; and n is a number selected from 1 to 4, wherein a distilled alkenyl or alkynyl-containing organosilicon precursor composition is produced after distilling; and packaging the distilled alkenyl or alkynyl-containing organosilicon precursor composition in a container, wherein the container permits transmission into the container of no more than 10% of ultraviolet and visible light having a wavelength of between 290 nm to 450 nm.

公开(公告)号：US11713328B2

公开(公告)日：2023-08-01

申请号：US16547468

申请日：2019-08-21

申请人： Versum Materials US, LLC

发明人： Robert G. Ridgeway ,  Raymond N. Vrtis ,  Xinjian Lei ,  Madhukar B. Rao ,  Steven Gerard Mayorga ,  Neil Osterwalder ,  Manchao Xiao ,  Meiliang Wang

IPC分类号： C07F7/08 ,  B01D3/00

CPC分类号： C07F7/0803 ,  B01D3/009

摘要： A method for producing an alkenyl or alkynyl-containing organosilicon precursor composition, the method comprising the steps of distilling at least once a composition comprising an alkenyl or alkynyl-containing organosilicon compound having the formula RnSiR14−n wherein R is selected a linear or branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group; R1 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C3 to C10 cyclic alkyl group; and n is a number selected from 1 to 4, wherein a distilled alkenyl or alkynyl-containing organosilicon precursor composition is produced after distilling; and packaging the distilled alkenyl or alkynyl-containing organosilicon precursor composition in a container, wherein the container permits transmission into the container of no more than 10% of ultraviolet and visible light having a wavelength of between 290 nm to 450 nm.

公开(公告)号：US10985013B2

公开(公告)日：2021-04-20

申请号：US16430882

申请日：2019-06-04

申请人： Versum Materials US, LLC

发明人： Jianheng Li ,  Robert G. Ridgeway ,  Xinjian Lei ,  Raymond N. Vrtis ,  Bing Han ,  Madhukar B. Rao

IPC分类号： H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C01B21/087 ,  C07F7/10 ,  H01L27/11517 ,  H01L27/11556 ,  H01L27/11563 ,  H01L27/11582

摘要： Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H3PO4, showing good etch selectivity.

公开(公告)号：US20190318925A1

公开(公告)日：2019-10-17

申请号：US16373919

申请日：2019-04-03

申请人： Versum Materials US, LLC

发明人： Xinjian Lei ,  Meiliang Wang ,  Madhukar B. Rao

IPC分类号： H01L21/02 ,  C07F7/10 ,  C23C16/34 ,  C23C16/36 ,  C23C16/50 ,  C23C16/455

摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: as described herein.