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公开(公告)号：US20200270749A1
公开(公告)日：2020-08-27
申请号：US16646686
申请日：2018-09-11
发明人： Ming Li , Xinjian Lei , Raymond N. Vrtis , Robert G. Ridgeway , Manchao Xiao
IPC分类号： C23C16/455 , C23C16/36 , C23C16/32 , C23C16/50
摘要： Described herein are compositions and methods of forming a dielectric film comprising silicon and carbon onto at least a surface of a substrate, the method comprising introducing into a reactor at least one silacycloalkane precursor selected from the group consisting of compounds represented by the structure of Formula IA and compounds represented by the structure of Formula IB: as defined herein.
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公开(公告)号：US20200062787A1
公开(公告)日：2020-02-27
申请号：US16547468
申请日：2019-08-21
发明人： Robert G. Ridgeway , Raymond N. Vrtis , Xinjian Lei , Madhukar B. Rao , Steven Gerard Mayorga , Neil Osterwalder , Manchao Xiao , Meiliang Wang
摘要： A method for producing an alkenyl or alkynyl-containing organosilicon precursor composition, the method comprising the steps of distilling at least once a composition comprising an alkenyl or alkynyl-containing organosilicon compound having the formula RnSiR14−n wherein R is selected a linear or branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group; R1 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C3 to C10 cyclic alkyl group; and n is a number selected from 1 to 4, wherein a distilled alkenyl or alkynyl-containing organosilicon precursor composition is produced after distilling; and packaging the distilled alkenyl or alkynyl-containing organosilicon precursor composition in a container, wherein the container permits transmission into the container of no more than 10% of ultraviolet and visible light having a wavelength of between 290 nm to 450 nm.
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公开(公告)号：US20190304775A1
公开(公告)日：2019-10-03
申请号：US16430882
申请日：2019-06-04
发明人： Jianheng Li , Robert G. Ridgeway , Xinjian Lei , Raymond N. Vrtis , Bing Han , Madhukar Rao
IPC分类号： H01L21/02 , C23C16/40 , C23C16/34 , H01L27/11582 , H01L27/11517 , H01L27/11556 , C01B21/087 , C07F7/10 , H01L27/11563
摘要： Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H3PO4, showing good etch selectivity.
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公开(公告)号：US11158498B2
公开(公告)日：2021-10-26
申请号：US16443978
申请日：2019-06-18
发明人： Robert G. Ridgeway , Jennifer Lynn Anne Achtyl , Raymond N. Vrtis , Xinjian Lei , William Robert Entley
摘要： A chemical vapor deposition method for producing a dielectric film, the method comprising: providing a substrate into a reaction chamber; introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising an silicon compound having Formula I as defined herein and applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film.
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公开(公告)号：US10985013B2
公开(公告)日：2021-04-20
申请号：US16430882
申请日：2019-06-04
发明人： Jianheng Li , Robert G. Ridgeway , Xinjian Lei , Raymond N. Vrtis , Bing Han , Madhukar B. Rao
IPC分类号： H01L21/02 , C23C16/34 , C23C16/40 , C01B21/087 , C07F7/10 , H01L27/11517 , H01L27/11556 , H01L27/11563 , H01L27/11582
摘要： Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H3PO4, showing good etch selectivity.
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公开(公告)号：US11851756B2
公开(公告)日：2023-12-26
申请号：US16646686
申请日：2018-09-11
发明人： Ming Li , Xinjian Lei , Raymond N. Vrtis , Robert G. Ridgeway , Manchao Xiao
IPC分类号： C23C16/32 , C23C16/455 , C23C16/36 , C23C16/50 , C23C16/44 , H01L21/768
CPC分类号： C23C16/45553 , C23C16/325 , C23C16/36 , C23C16/45538 , C23C16/50 , C23C16/4408 , H01L21/76829
摘要： Methods for forming a dielectric film comprising silicon and carbon onto at least a surface of a substrate includes introducing into a reactor one or more compounds represented by the structure of Formula IA and compounds represented by the structure of Formula IB:
as defined herein.-
公开(公告)号：US11713328B2
公开(公告)日：2023-08-01
申请号：US16547468
申请日：2019-08-21
发明人： Robert G. Ridgeway , Raymond N. Vrtis , Xinjian Lei , Madhukar B. Rao , Steven Gerard Mayorga , Neil Osterwalder , Manchao Xiao , Meiliang Wang
CPC分类号： C07F7/0803 , B01D3/009
摘要： A method for producing an alkenyl or alkynyl-containing organosilicon precursor composition, the method comprising the steps of distilling at least once a composition comprising an alkenyl or alkynyl-containing organosilicon compound having the formula RnSiR14−n wherein R is selected a linear or branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group; R1 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C3 to C10 cyclic alkyl group; and n is a number selected from 1 to 4, wherein a distilled alkenyl or alkynyl-containing organosilicon precursor composition is produced after distilling; and packaging the distilled alkenyl or alkynyl-containing organosilicon precursor composition in a container, wherein the container permits transmission into the container of no more than 10% of ultraviolet and visible light having a wavelength of between 290 nm to 450 nm.
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公开(公告)号：US20190385840A1
公开(公告)日：2019-12-19
申请号：US16443978
申请日：2019-06-18
发明人： Robert G. Ridgeway , Jennifer Lynn Anne Achtyl , Raymond N. Vrtis , Xinjian Lei , William Robert Entley
摘要： A chemical vapor deposition method for producing a dielectric film, the method comprising: providing a substrate into a reaction chamber; introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising an silicon compound having Formula I as defined herein and applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film.
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9.发明申请公开(公告)号：US20190382886A1
公开(公告)日：2019-12-19
申请号：US16442511
申请日：2019-06-16
发明人： Jianheng Li , Xinjian Lei , Raymond N. Vrtis , Robert G. Ridgeway
IPC分类号： C23C16/40 , C07F7/08 , C23C16/511
摘要： The siloxanes containing compositions and methods are disclosed. The disclosed method relates to a method of depositing a dielectric film on a substrate, the method involving the steps of a) placing the substrate in a reaction chamber; b) introducing a process gas comprising a cyclic silicon-containing compound and an oxidant; and c) exposing the substrate to the process gas under conditions such that the cyclic silicon-containing compound and the oxidant react to form a flowable film on the substrate surface. The method can further involve converting the flowable film into a solid dielectric material (e.g., a silicon oxide film). In certain embodiments, conversion of the film may be accomplished by annealing the as-deposited film by a thermal, plasma anneal and/UV curing.
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