公开(公告)号：US4965697A

公开(公告)日：1990-10-23

申请号：US330249

申请日：1989-03-29

Applicant: Vincent Mosser ,  Jean-Louis Robert

Inventor： Vincent Mosser ,  Jean-Louis Robert

IPC: G01D3/036 ,  G01L9/00 ,  G01L19/04 ,  H01L29/84

CPC classification number: H01L29/84 ,  G01D3/036 ,  G01L19/0645 ,  G01L19/141 ,  G01L9/0098

Abstract: Solid state pressure sensors based upon aluminum gallium arsenide devices are disclosed. One embodiment uses a TEGFET as a hydrostatic pressure sensor. By adjustment of the gate voltage, it is possible to vary the operating conditions of the sensor, so as to adapt it dynamically to particular measurement conditions. Another hydrostatic pressure transducer, essentially made from aluminum gallium arsenide on a gallium arsenide substrate, comprises a layer sensitive to pressure and a layer sensitive to temperature: due to its homogeneous structure and its rigorous temperature compensation, this transducer offers both high accuracy and high sensitivity.

Abstract translation: 公开了基于砷化铝器件的固态压力传感器。 一个实施例使用TEGFET作为静水压力传感器。 通过调节栅极电压，可以改变传感器的工作条件，以便动态地适应传感器的特定测量条件。 基本上由砷化镓衬底上的砷化镓铝制成的另一静压力传感器包括对压力敏感的层和对温度敏感的层：由于其均匀的结构和严格的温度补偿，该传感器提供高精度和高灵敏度 。

公开(公告)号：US5442221A

公开(公告)日：1995-08-15

申请号：US065003

申请日：1993-05-24

Applicant: Vincent Mosser ,  Jean-Louis Robert

Inventor： Vincent Mosser ,  Jean-Louis Robert

IPC: H01L43/06 ,  H01L27/22 ,  H01L43/00

CPC classification number: H01L43/065

Abstract: A Hall effect sensor of two-dimensional electron gas type comprising, on an insulating substrate, a quantum well structure, a carrier injection layer adjacent to the quantum well structure, of thickness less than 250 .ANG. and having an density per unit area of donors integrated over the whole thickness of the carrier injection layer less than 5.times.10.sup.12 cm.sup.-2, an insulating burial layer deposited on the carrier injection layer, having a conduction band with an energy level greater than the Fermi energy of the sensor and a thickness greater than 200 .ANG.. Applicable to the field of electricity meters and current sensors.

Abstract translation: 一种二维电子气体型霍尔效应传感器，包括在绝缘衬底上的量子阱结构，与量子阱结构相邻的载流子注入层，厚度小于250，并且具有供体的单位面积密度 在载流子注入层的整个厚度小于5×10 12 cm -2的情况下，沉积在载流子注入层上的绝缘埋藏层具有能量水平大于传感器的费米能量的导带，并且厚度大于200A 。 适用于电表和电流传感器领域。

公开(公告)号：US5187984A

公开(公告)日：1993-02-23

申请号：US691906

申请日：1991-04-26

Applicant: Vincent Mosser ,  Jean-Louis Robert ,  Sylvie Contreras

Inventor： Vincent Mosser ,  Jean-Louis Robert ,  Sylvie Contreras

IPC: G01L9/00 ,  G01L19/00 ,  G01L19/04

CPC classification number: G01L19/0092 ,  G01L9/0052 ,  G01L9/045

Abstract: A monolithic pressure and/or temperature transducer comprises at least two sensitive semiconductor layers of III-V material sensitive to pressure and to temperature and supported by a common substrate of III-V material, which two layers comprise: a first layer doped with donor type impurities at a first concentration and having a first resistivity as a function of pressure and of temperature; and a second layer doped with donor type impurities at a second concentration different from the first concentration and having a second resistivity as a function of pressure and of temperature, which second resistivity depends on temperature in a different manner than the first resistivity.

Abstract translation: 单片压力和/或温度换能器包括至少两个对压力和温度敏感的敏感半导体III-V材料层，并由III-V材料的公共衬底支撑，该两层包括：掺有供体型的第一层 第一浓度的杂质和第一电阻率作为压力和温度的函数; 以及掺杂有不同于第一浓度的第二浓度的供体型杂质并且具有作为压力和温度的函数的第二电阻率的第二层，该第二电阻率以与第一电阻率不同的方式依赖于温度。

公开(公告)号：US06734514B2

公开(公告)日：2004-05-11

申请号：US10374656

申请日：2003-02-26

Applicant: Jean-Louis Robert ,  Julien Pernot ,  Jean Camassel ,  Sylvie Contreras

Inventor： Jean-Louis Robert ,  Julien Pernot ,  Jean Camassel ,  Sylvie Contreras

IPC: H01L2982

CPC classification number: G01R33/07 ,  H01L43/065

Abstract: A metrological Hall effect sensor with sensitivity to temperature less than 250 ppm/° C. and with high Hall effect coefficient for temperatures greater than 200° C. formed in a multilayer structure comprising a thin active layer deposited on a substrate, wherein the substrate is made of monocrystalline silicon carbide (SiC), and wherein the thin active layer is made of a weakly type n-doped silicon carbide (SiC) semiconductor in the exhaustion regime.

Abstract translation: 一种计量霍尔效应传感器，其温度低于250ppm /℃，对于大于200℃的温度具有较高的霍尔效应系数，其形成于多层结构中，该多层结构包括沉积在基底上的薄的活性层，其中基底为 由单晶碳化硅（SiC）制成，并且其中薄的有源层在耗尽状态下由弱型n掺杂碳化硅（SiC）半导体制成。