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公开(公告)号：US5442221A
公开(公告)日：1995-08-15
申请号：US065003
申请日：1993-05-24
Applicant: Vincent Mosser , Jean-Louis Robert
Inventor： Vincent Mosser , Jean-Louis Robert
CPC classification number: H01L43/065
Abstract: A Hall effect sensor of two-dimensional electron gas type comprising, on an insulating substrate, a quantum well structure, a carrier injection layer adjacent to the quantum well structure, of thickness less than 250 .ANG. and having an density per unit area of donors integrated over the whole thickness of the carrier injection layer less than 5.times.10.sup.12 cm.sup.-2, an insulating burial layer deposited on the carrier injection layer, having a conduction band with an energy level greater than the Fermi energy of the sensor and a thickness greater than 200 .ANG.. Applicable to the field of electricity meters and current sensors.
Abstract translation: 一种二维电子气体型霍尔效应传感器，包括在绝缘衬底上的量子阱结构，与量子阱结构相邻的载流子注入层，厚度小于250，并且具有供体的单位面积密度 在载流子注入层的整个厚度小于5×10 12 cm -2的情况下，沉积在载流子注入层上的绝缘埋藏层具有能量水平大于传感器的费米能量的导带，并且厚度大于200A 。 适用于电表和电流传感器领域。
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公开(公告)号：US4965697A
公开(公告)日：1990-10-23
申请号：US330249
申请日：1989-03-29
Applicant: Vincent Mosser , Jean-Louis Robert
Inventor： Vincent Mosser , Jean-Louis Robert
CPC classification number: H01L29/84 , G01D3/036 , G01L19/0645 , G01L19/141 , G01L9/0098
Abstract: Solid state pressure sensors based upon aluminum gallium arsenide devices are disclosed. One embodiment uses a TEGFET as a hydrostatic pressure sensor. By adjustment of the gate voltage, it is possible to vary the operating conditions of the sensor, so as to adapt it dynamically to particular measurement conditions. Another hydrostatic pressure transducer, essentially made from aluminum gallium arsenide on a gallium arsenide substrate, comprises a layer sensitive to pressure and a layer sensitive to temperature: due to its homogeneous structure and its rigorous temperature compensation, this transducer offers both high accuracy and high sensitivity.
Abstract translation: 公开了基于砷化铝器件的固态压力传感器。 一个实施例使用TEGFET作为静水压力传感器。 通过调节栅极电压，可以改变传感器的工作条件，以便动态地适应传感器的特定测量条件。 基本上由砷化镓衬底上的砷化镓铝制成的另一静压力传感器包括对压力敏感的层和对温度敏感的层：由于其均匀的结构和严格的温度补偿，该传感器提供高精度和高灵敏度 。
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公开(公告)号：US5187984A
公开(公告)日：1993-02-23
申请号：US691906
申请日：1991-04-26
Applicant: Vincent Mosser , Jean-Louis Robert , Sylvie Contreras
Inventor： Vincent Mosser , Jean-Louis Robert , Sylvie Contreras
CPC classification number: G01L19/0092 , G01L9/0052 , G01L9/045
Abstract: A monolithic pressure and/or temperature transducer comprises at least two sensitive semiconductor layers of III-V material sensitive to pressure and to temperature and supported by a common substrate of III-V material, which two layers comprise: a first layer doped with donor type impurities at a first concentration and having a first resistivity as a function of pressure and of temperature; and a second layer doped with donor type impurities at a second concentration different from the first concentration and having a second resistivity as a function of pressure and of temperature, which second resistivity depends on temperature in a different manner than the first resistivity.
Abstract translation: 单片压力和/或温度换能器包括至少两个对压力和温度敏感的敏感半导体III-V材料层，并由III-V材料的公共衬底支撑，该两层包括：掺有供体型的第一层 第一浓度的杂质和第一电阻率作为压力和温度的函数; 以及掺杂有不同于第一浓度的第二浓度的供体型杂质并且具有作为压力和温度的函数的第二电阻率的第二层，该第二电阻率以与第一电阻率不同的方式依赖于温度。
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公开(公告)号：US5081437A
公开(公告)日：1992-01-14
申请号：US479889
申请日：1990-02-14
Applicant: Vincent Mosser , Ian Suski , Joseph Goss , Robert Leydier
Inventor： Vincent Mosser , Ian Suski , Joseph Goss , Robert Leydier
CPC classification number: G01L1/2293 , G01L9/0042 , G01L9/0055
Abstract: The pressure sensor is formed of semiconductor material which is formed on insulating support, i.e., as a semiconductor-on-silicon. The sensor is comprised of four piezoresistive gauges formed in the semiconductor material. Two of the gauges, each have a pair of limbs joined by a base, such that they are U-shaped, and two others are I-shaped. Each of the four gauges comprise two half-gauges, and each half-gauge comprises an elongated sensing zone in semiconductor material and having a reduced width in the plane of the insulating support. Two ohmic contact zones are disposed at the ends of each of the half-gauges, and two connection zones in semiconductor material and of greater width are disposed between the sensing zones and the ohmic contact zones, the form of the two connection zones are the same for each of the eight half-gauges.
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公开(公告)号：US20110068785A1
公开(公告)日：2011-03-24
申请号：US12957545
申请日：2010-12-01
Applicant: Youcef Haddab , Alexandre Kerlain , Vincent Mosser , Hartman Van Wyk
Inventor： Youcef Haddab , Alexandre Kerlain , Vincent Mosser , Hartman Van Wyk
IPC: G01R33/06
CPC classification number: G01D3/036 , G01D5/142 , G01R1/44 , G01R15/202 , G01R33/07 , G01R33/075 , H01L43/065
Abstract: Disclosed are apparatus and methodology for providing approaches to remove or reduce thermal drift of the magnetic sensitivity of Hall sensor devices, to improve the stability of resulting signals of interest. Samples of a particular signal or signals of interest having improved stability make for advantageous use in conjunction with electricity meters. At the same time, associated designs and related components have greater simplicity, for reduced complexity in implementation. Among alternative embodiments, a gating structure selected of various present alternative designs may be used to partially cover, to an intentionally selected degree, an active area of a Hall sensor, so that a zero-drift supply current value may likewise be selected so as to satisfy other criteria which may be applicable to use of the Hall sensor. In other alternative embodiments, a gate structure is used which fully covers the Hall sensor active area, but a gate-control technique is practiced which is based on combined use with an external, relatively high resistance voltage-divider circuitry arrangement, again for eliminating temperature-based drift of the magnetic sensitivity of the Hall sensor arrangement, regardless of the end use to which such Hall sensor is applied.
Abstract translation: 公开了用于提供去除或减少霍尔传感器装置的磁敏感的热漂移的方法的装置和方法，以改善所产生的感兴趣信号的稳定性。 具有改进的稳定性的特定信号或感兴趣的信号的样本有利于与电表结合使用。 同时，相关设计和相关组件具有更大的简单性，从而降低了实现的复杂性。 在替代实施例中，可以使用选自各种当前替代设计的选通结构来部分地将故意选择的程度覆盖霍尔传感器的有效区域，使得可以同样地选择零漂移电源电流值，以便 满足可能适用于使用霍尔传感器的其他标准。 在其他替代实施例中，使用完全覆盖霍尔传感器有效区域的栅极结构，但是实现了栅极控制技术，其基于与外部相对高电阻分压器电路装置的组合使用，再次用于消除温度 基于霍尔传感器装置的磁敏感度的漂移，而不管施加这种霍尔传感器的最终用途如何。
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Patent Agency Ranking
公开(公告)号：US08299778B2
公开(公告)日：2012-10-30
申请号：US12957545
申请日：2010-12-01
Applicant: Youcef Haddab , Alexandre Kerlain , Vincent Mosser , Hartman Van Wyk
Inventor： Youcef Haddab , Alexandre Kerlain , Vincent Mosser , Hartman Van Wyk
IPC: G01R33/07
CPC classification number: G01D3/036 , G01D5/142 , G01R1/44 , G01R15/202 , G01R33/07 , G01R33/075 , H01L43/065
Abstract: Disclosed are apparatus and methodology for providing approaches to remove or reduce thermal drift of the magnetic sensitivity of Hall sensor devices, to improve the stability of resulting signals of interest. Samples of a particular signal or signals of interest having improved stability make for advantageous use in conjunction with electricity meters. At the same time, associated designs and related components have greater simplicity, for reduced complexity in implementation. Among alternative embodiments, a gating structure selected of various present alternative designs may be used to partially cover, to an intentionally selected degree, an active area of a Hall sensor, so that a zero-drift supply current value may likewise be selected so as to satisfy other criteria which may be applicable to use of the Hall sensor. In other alternative embodiments, a gate structure is used which fully covers the Hall sensor active area, but a gate-control technique is practiced which is based on combined use with an external, relatively high resistance voltage-divider circuitry arrangement, again for eliminating temperature-based drift of the magnetic sensitivity of the Hall sensor arrangement, regardless of the end use to which such Hall sensor is applied.
Abstract translation: 公开了用于提供去除或减少霍尔传感器装置的磁敏感的热漂移的方法的装置和方法，以改善所产生的感兴趣信号的稳定性。 具有改进的稳定性的特定信号或感兴趣的信号的样本有利于与电表结合使用。 同时，相关设计和相关组件具有更大的简单性，从而降低了实现的复杂性。 在替代实施例中，可以使用选自各种当前替代设计的选通结构来部分地将故意选择的程度覆盖霍尔传感器的有效区域，使得可以同样地选择零漂移电源电流值，以便 满足可能适用于使用霍尔传感器的其他标准。 在其他替代实施例中，使用完全覆盖霍尔传感器有效区域的栅极结构，但是实现了栅极控制技术，其基于与外部相对高电阻分压器电路装置的组合使用，再次用于消除温度 基于霍尔传感器装置的磁敏感度的漂移，而不管施加这种霍尔传感器的最终用途如何。
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7.发明授权
公开(公告)号：US5223444A
公开(公告)日：1993-06-29
申请号：US761119
申请日：1991-09-17
Applicant: Vincent Mosser , Ian Suski , Joseph Goss , Robert Leydier
Inventor： Vincent Mosser , Ian Suski , Joseph Goss , Robert Leydier
CPC classification number: G01L1/2293 , G01L9/0042 , G01L9/0055 , Y10T29/42 , Y10T29/49103
Abstract: The method of making a pressure sensor formed of semiconductor material on an insulating support, i.e., as a semiconductor-on-silicon, is described. The sensor is comprised of four piezoresistive gauges formed in the semiconductor material. Two of the gauges, each have a pair of limbs joined by a base, such that they are U-shaped, and two others are I-shaped. Each of the four gauges comprise two half-gauges, and each half-gauge comprises an elongated sensing zone in semiconductor material and having a reduced width in the plane of the insulating support. Two ohmic contact zones are disposed at the ends of each of the half-gauges, and two connection zones in semiconductor material and of greater width are disposed between the sensing zones and the ohmic contact zones, the form of the two connection zones are the same for each of the eight half-gauges.
Abstract translation: 描述了在半导体材料上形成的绝缘支撑体（即，作为硅上半导体）形成压力传感器的方法。 传感器由形成在半导体材料中的四个压阻计组成。 两个量规，每个都有一对四肢，由一个基座连接，使得它们是U形的，另外两个是I形的。 四个量规中的每一个包括两个半计，每个半计包括半导体材料中的细长感测区域，并且在绝缘支撑件的平面中具有减小的宽度。 两个欧姆接触区域设置在每个半计的端部，并且半导体材料中的两个连接区域和较大宽度设置在感测区域和欧姆接触区域之间，两个连接区域的形式相同 对于八个半计的每一个。
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公开(公告)号：US07847536B2
公开(公告)日：2010-12-07
申请号：US11897019
申请日：2007-08-28
Applicant: Youcef Haddab , Alexandre Kerlain , Vincent Mosser , Hartman Van Wyk
Inventor： Youcef Haddab , Alexandre Kerlain , Vincent Mosser , Hartman Van Wyk
IPC: G01R33/07
CPC classification number: G01D3/036 , G01D5/142 , G01R1/44 , G01R15/202 , G01R33/07 , G01R33/075 , H01L43/065
Abstract: Disclosed are apparatus and methodology for providing approaches to remove or reduce thermal drift of the magnetic sensitivity of Hall sensor devices, to improve the stability of resulting signals of interest. Samples of a particular signal or signals of interest having improved stability make for advantageous use in conjunction with electricity meters. At the same time, associated designs and related components have greater simplicity, for reduced complexity in implementation. Among alternative embodiments, a gating structure selected of various present alternative designs may be used to partially cover, to an intentionally selected degree, an active area of a Hall sensor, so that a zero-drift supply current value may likewise be selected so as to satisfy other criteria which may be applicable to use of the Hall sensor. In other alternative embodiments, a gate structure is used which fully covers the Hall sensor active area, but a gate-control technique is practiced which is based on combined use with an external, relatively high resistance voltage-divider circuitry arrangement, again for eliminating temperature-based drift of the magnetic sensitivity of the Hall sensor arrangement, regardless of the end use to which such Hall sensor is applied.
Abstract translation: 公开了用于提供去除或减少霍尔传感器装置的磁敏感的热漂移的方法的装置和方法，以改善所产生的感兴趣信号的稳定性。 具有改进的稳定性的特定信号或感兴趣的信号的样本有利于与电表结合使用。 同时，相关设计和相关组件具有更大的简单性，从而降低了实现的复杂性。 在替代实施例中，可以使用选自各种当前替代设计的选通结构来部分地将故意选择的程度覆盖霍尔传感器的有效区域，使得可以同样地选择零漂移电源电流值，以便 满足可能适用于使用霍尔传感器的其他标准。 在其他替代实施例中，使用完全覆盖霍尔传感器有效区域的栅极结构，但是实现了栅极控制技术，其基于与外部相对高电阻分压器电路装置的组合使用，再次用于消除温度 基于霍尔传感器装置的磁敏感度的漂移，而不管施加这种霍尔传感器的最终用途如何。
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公开(公告)号：US20080088298A1
公开(公告)日：2008-04-17
申请号：US11897019
申请日：2007-08-28
Applicant: Youcef Haddab , Alexandre Kerlain , Vincent Mosser , Hartman Van Wyk
Inventor： Youcef Haddab , Alexandre Kerlain , Vincent Mosser , Hartman Van Wyk
IPC: G01R15/20
CPC classification number: G01D3/036 , G01D5/142 , G01R1/44 , G01R15/202 , G01R33/07 , G01R33/075 , H01L43/065
Abstract: Disclosed are apparatus and methodology for providing approaches to remove or reduce thermal drift of the magnetic sensitivity of Hall sensor devices, to improve the stability of resulting signals of interest. Samples of a particular signal or signals of interest having improved stability make for advantageous use in conjunction with electricity meters. At the same time, associated designs and related components have greater simplicity, for reduced complexity in implementation. Among alternative embodiments, a gating structure selected of various present alternative designs may be used to partially cover, to an intentionally selected degree, an active area of a Hall sensor, so that a zero-drift supply current value may likewise be selected so as to satisfy other criteria which may be applicable to use of the Hall sensor. In other alternative embodiments, a gate structure is used which fully covers the Hall sensor active area, but a gate-control technique is practiced which is based on combined use with an external, relatively high resistance voltage-divider circuitry arrangement, again for eliminating temperature-based drift of the magnetic sensitivity of the Hall sensor arrangement, regardless of the end use to which such Hall sensor is applied.
Abstract translation: 公开了用于提供去除或减少霍尔传感器装置的磁敏感的热漂移的方法的装置和方法，以改善所产生的感兴趣信号的稳定性。 具有改进的稳定性的特定信号或感兴趣的信号的样本有利于与电表结合使用。 同时，相关设计和相关组件具有更大的简单性，从而降低了实现的复杂性。 在替代实施例中，可以使用选自各种当前替代设计的选通结构来部分地将故意选择的程度覆盖霍尔传感器的有效区域，使得可以同样地选择零漂移电源电流值，以便 满足可能适用于使用霍尔传感器的其他标准。 在其他替代实施例中，使用完全覆盖霍尔传感器有效区域的栅极结构，但是实现了栅极控制技术，其基于与外部相对高电阻分压器电路装置的组合使用，再次用于消除温度 基于霍尔传感器装置的磁敏感度的漂移，而不管施加这种霍尔传感器的最终用途如何。
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公开(公告)号：US5281836A
公开(公告)日：1994-01-25
申请号：US844616
申请日：1992-04-09
Applicant: Vincent Mosser , Jan Suski
Inventor： Vincent Mosser , Jan Suski
CPC classification number: H05B3/48
Abstract: The invention relates to sensors having field effect semiconductors. The sensor of the invention comprises a ring oscillator constituted by an odd number of CMOS inverters disposed in a zone sensitive to the physical property to be measured. In order to increase the sensitivity of the sensor, the N channel of the NMOS transistor in each CMOS inverter is disposed perpendicularly to the P channel of the PMOS transistor.
Abstract translation: PCT No.PCT / FR90 / 00736 Sec。 371日期：1992年4月9日 102（e）日期1992年4月9日PCT 1990年10月15日PCT PCT。 出版物WO91 / 06125 日期1991年5月2日。本发明涉及具有场效应半导体的传感器。 本发明的传感器包括由奇数个CMOS反相器构成的环形振荡器，该反相器设置在对待测物理性质敏感的区域中。 为了提高传感器的灵敏度，每个CMOS反相器中的NMOS晶体管的N沟道垂直于PMOS晶体管的P沟道设置。
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