公开(公告)号：US07489914B2

公开(公告)日：2009-02-10

申请号：US11114733

申请日：2005-04-25

申请人： Vinu Govind ,  Sidharth Dalmia ,  Amit Bavisi ,  Venkatesh Sundraram ,  Madhavan Swaminathan ,  George White

发明人： Vinu Govind ,  Sidharth Dalmia ,  Amit Bavisi ,  Venkatesh Sundraram ,  Madhavan Swaminathan ,  George White

IPC分类号： H04B1/18

CPC分类号： H01P1/20381 ,  H01L2224/16227 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/19105 ,  H03B5/1203 ,  H03B5/1215 ,  H03B5/1228 ,  H03B5/1231 ,  H03F3/195 ,  H03F2200/111 ,  H03H7/09 ,  H03H7/1775 ,  H03H7/38 ,  H03H7/46 ,  H03H2001/0085 ,  H05K1/024 ,  H05K1/16 ,  H05K3/4623 ,  H05K3/4626

摘要： The present invention allows for the use of chip-package co-design of RF transceivers and their components by using discrete active devices in conjunction with passive components. Two particular components are described, including voltage controlled oscillators (VCOs) and low noise amplifiers (LNAs). The high quality passive components for use in the VCOs and LNAs may be obtained by the use of embedded passives in organic substrates. Further, the embedded passives may have multi-band characteristics, thereby allowing multi-band VCOs and LNAs to be implemented with fewer components. In situations where size is a concern, the active devices and passive components utilized in an RF transceiver may be implemented in a low form factor module of less than 1.1 mm thick according to an embodiment of the invention.

摘要翻译： 本发明允许通过使用分立的有源器件结合无源部件来使用RF收发器及其部件的芯片封装的共同设计。 描述了两个特定的部件，包括压控振荡器（VCO）和低噪声放大器（LNA）。 用于VCO和LNA的高品质无源元件可以通过在有机衬底中使用嵌入式无源器来获得。 此外，嵌入式无源器件可以具有多频带特性，从而允许以更少的部件实现多频带VCO和LNA。 在尺寸是关注的情况下，根据本发明的实施例，在RF收发器中使用的有源器件和无源部件可以以小于1.1mm厚的低形状因子模块来实现。

公开(公告)号：US20050248418A1

公开(公告)日：2005-11-10

申请号：US11114733

申请日：2005-04-25

申请人： Vinu Govind ,  Sidharth Dalmia ,  Amit Bavisi ,  Venkatesh Sundraram ,  Madhavan Swaminathan ,  George White

发明人： Vinu Govind ,  Sidharth Dalmia ,  Amit Bavisi ,  Venkatesh Sundraram ,  Madhavan Swaminathan ,  George White

IPC分类号： H01P1/203 ,  H03B1/00 ,  H03B5/12 ,  H03H7/09 ,  H03H7/38 ,  H03H7/46 ,  H03H11/00 ,  H05K1/02 ,  H05K1/16 ,  H05K3/46

CPC分类号： H01P1/20381 ,  H01L2224/16227 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/19105 ,  H03B5/1203 ,  H03B5/1215 ,  H03B5/1228 ,  H03B5/1231 ,  H03F3/195 ,  H03F2200/111 ,  H03H7/09 ,  H03H7/1775 ,  H03H7/38 ,  H03H7/46 ,  H03H2001/0085 ,  H05K1/024 ,  H05K1/16 ,  H05K3/4623 ,  H05K3/4626

摘要： The present invention allows for the use of chip-package co-design of RF transceivers and their components by using discrete active devices in conjunction with passive components. Two particular components are described, including voltage controlled oscillators (VCOs) and low noise amplifiers (LNAs). The high quality passive components for use in the VCOs and LNAs may be obtained by the use of embedded passives in organic substrates. Further, the embedded passives may have multi-band characteristics, thereby allowing multi-band VCOs and LNAs to be implemented with fewer components. In situations where size is a concern, the active devices and passive components utilized in an RF transceiver may be implemented in a low form factor module of less than 1.1 mm thick according to an embodiment of the invention.

摘要翻译： 本发明允许通过使用分立的有源器件结合无源部件来使用RF收发器及其部件的芯片封装的共同设计。 描述了两个特定的部件，包括压控振荡器（VCO）和低噪声放大器（LNA）。 用于VCO和LNA的高品质无源元件可以通过在有机衬底中使用嵌入式无源器来获得。 此外，嵌入式无源器件可以具有多频带特性，从而允许以更少的部件实现多频带VCO和LNA。 在尺寸是关注的情况下，根据本发明的实施例，在RF收发器中使用的有源器件和无源部件可以以小于1.1mm厚的低形状因子模块来实现。

公开(公告)号：US07253788B2

公开(公告)日：2007-08-07

申请号：US11260952

申请日：2005-10-28

申请人： Jinwoo Choi ,  Madhavan Swaminathan ,  Vinu Govind

发明人： Jinwoo Choi ,  Madhavan Swaminathan ,  Vinu Govind

IPC分类号： H01Q15/02

CPC分类号： H01Q15/006

摘要： Alternating impedance electromagnetic bandgap (AI-EBG) structures, systems incorporating AI-EBG structures, and methods of making AI-EBG structures, are disclosed.

摘要翻译： 公开了交替阻抗电磁带隙（AI-EBG）结构，包含AI-EBG结构的系统以及制造AI-EBG结构的方法。

公开(公告)号：US07215301B2

公开(公告)日：2007-05-08

申请号：US10936774

申请日：2004-09-08

申请人： Jinwoo Choi ,  Madhavan Swaminathan ,  Vinu Govind

发明人： Jinwoo Choi ,  Madhavan Swaminathan ,  Vinu Govind

IPC分类号： H01Q15/02 ,  H01Q1/38

CPC分类号： H01Q15/006

摘要： Electromagnetic bandgap (EBG) structures, systems incorporating EBG structures, and methods of making EBG structures, are disclosed. An embodiment of the structure, among others, includes a plurality of first elements disposed on a first plane of a device; and a second element connecting each first element to an adjacent first element, the second element being disposed on the first plane of the device. The structure is configured to substantially filter electromagnetic waves to a stopband floor of about −40 dB to about −120 dB in a bandgap of about 100 MHz to about 50 GHz having a width selected from about 1 GHz, 2 GHz, 3 GHz, 5 GHz, 10 GHz, 20 GHz, and 30 GHz. In addition, the structure has a center frequency positioned at a frequency from about 1 GHz to 37 GHz.

摘要翻译： 公开了电磁带隙（EBG）结构，并入EBG结构的系统，以及制造EBG结构的方法。 该结构的实施例尤其包括设置在装置的第一平面上的多个第一元件; 以及将每个第一元件连接到相邻的第一元件的第二元件，所述第二元件设置在所述器件的第一平面上。 该结构被配置为在约100MHz至约50GHz的带隙中基本上将电磁波滤波到约-40dB至约-120dB的阻带​​层，其宽度选自约1GHz，2GHz，3GHz，5 GHz，10 GHz，20 GHz和30 GHz。 此外，该结构具有位于从约1GHz至37GHz的频率的中心频率。

公开(公告)号：US20060092093A1

公开(公告)日：2006-05-04

申请号：US11260952

申请日：2005-10-28

申请人： Jinwoo Choi ,  Madhavan Swaminathan ,  Vinu Govind

发明人： Jinwoo Choi ,  Madhavan Swaminathan ,  Vinu Govind

IPC分类号： H01Q15/02

CPC分类号： H01Q15/006

摘要： Alternating impedance electromagnetic bandgap (AI-EBG) structures, systems incorporating AI-EBG structures, and methods of making AI-EBG structures, are disclosed.

摘要翻译： 公开了交替阻抗电磁带隙（AI-EBG）结构，包含AI-EBG结构的系统以及制造AI-EBG结构的方法。

公开(公告)号：US20060050010A1

公开(公告)日：2006-03-09

申请号：US10936774

申请日：2004-09-08

申请人： Jinwoo Choi ,  Madhavan Swaminathan ,  Vinu Govind

发明人： Jinwoo Choi ,  Madhavan Swaminathan ,  Vinu Govind

IPC分类号： H01Q15/02

CPC分类号： H01Q15/006

摘要： Electromagnetic bandgap (EBG) structures, systems incorporating EBG structures, and methods of making EBG structures, are disclosed. An embodiment of the structure, among others, includes a plurality of first elements disposed on a first plane of a device; and a second element connecting each first element to an adjacent first element, the second element being disposed on the first plane of the device. The structure is configured to substantially filter electromagnetic waves to a stopband floor of about −40 dB to about −120 dB in a bandgap of about 100 MHz to about 50 GHz having a width selected from about 1 GHz, 2 GHz, 3 GHz, 5 GHz, 10 GHz, 20 GHz, and 30 GHz. In addition, the structure has a center frequency positioned at a frequency from about 1 GHz to 37 GHz.

摘要翻译： 公开了电磁带隙（EBG）结构，并入EBG结构的系统，以及制造EBG结构的方法。 该结构的实施例尤其包括设置在装置的第一平面上的多个第一元件; 以及将每个第一元件连接到相邻的第一元件的第二元件，所述第二元件设置在所述器件的第一平面上。 该结构被配置为在约100MHz至约50GHz的带隙中基本上将电磁波滤波到约-40dB至约-120dB的阻带​​层，其宽度选自约1GHz，2GHz，3GHz，5 GHz，10 GHz，20 GHz和30 GHz。 此外，该结构具有位于从约1GHz至37GHz的频率的中心频率。