公开(公告)号：US5403780A

公开(公告)日：1995-04-04

申请号：US72279

申请日：1993-06-04

申请人： Vivek Jain ,  Milind G. Weiling ,  Dipankar Pramanik

发明人： Vivek Jain ,  Milind G. Weiling ,  Dipankar Pramanik

IPC分类号： H01L21/31 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/90

CPC分类号： H01L21/31055 ,  H01L21/76819 ,  Y10S438/97

摘要： Void-free planarization of sub-micron and deep sub-micron semiconductor devices results from depositing a layer of silicon-enriched oxide over a conventionally fabricated device and its metal traces. Conventional layers of TEOS-based oxide and SOG are then applied over the layer of silicon-enriched oxide. The silicon-enriched oxide has an index of refraction of at least about 1.50, a dangling bond density of about 10.sup.17 /cm.sup.3, and is typically about 1,000 .ANG. to 2,000 .ANG. thick. Because it is relatively deficient in oxygen atoms, the silicon-enriched oxide releases relatively few oxygen atoms when exposed by the etching process and does not greatly accelerate the SOG etch rate. Further, the silicon-enriched oxide itself has an etch rate that is only about 75% that of stoichiometric TEOS-based oxide. As such, the silicon-enriched oxide acts as a buffer that slows the etch-back process as the etching approaches the level of the metal traces, thus protecting the metal traces against exposure. In addition, the silicon-enriched oxide advantageously promotes stability and reliability of the underlying device. The silicon-enriched performs an shield-like function by neutralizing charges that could influence the underlying semiconductor device. In practice, the silicon-enriched oxide can extend hot carrier lifetime by about one order of magnitude.

摘要翻译： 通过在常规制造的器件及其金属迹线上沉积富含硅的氧化物层，产生亚微米和深亚微米半导体器件的无空间平面化。 然后将TEOS基氧化物和SOG的常规层施加在富含硅的氧化物层上。 富硅氧化物的折射率至少为约1.50，悬挂键密度为约1017 / cm3，通常为约1000安培至2,000安格姆厚。 由于氧原子相对不足，当通过蚀刻工艺暴露时，富硅氧化物释放相对较少的氧原子，并且不会极大地加速SOG蚀刻速率。 此外，富硅氧化物本身具有仅为化学计量TEOS基氧化物的蚀刻速率的约75％的蚀刻速率。 因此，富集氧化物起缓冲作用，因为蚀刻接近金属迹线的水平，所以缓冲了回蚀工艺，从而保护金属迹线免受暴露。 此外，富含硅的氧化物有利地促进了底层器件的稳定性和可靠性。 富硅通过中和可能影响底层半导体器件的电荷来执行屏蔽状功能。 在实践中，富硅氧化物可以将热载流子寿命延长大约一个数量级。