Method and apparatus for removing post-etch residues and other adherent matrices
    2.
    发明授权
    Method and apparatus for removing post-etch residues and other adherent matrices 有权
    用于去除蚀刻后残留物和其他粘附基质的方法和装置

    公开(公告)号:US06228563B1

    公开(公告)日:2001-05-08

    申请号:US09397956

    申请日:1999-09-17

    IPC分类号: G03F736

    摘要: Adherent matrix layers such as post-etch and other post-process residues are removed from a substrate by exposing them to a vapor phase solvent to allow penetration of the vapor phase solvent into the adherent matrix layers and condensing the vapor phase solvent into the adherent matrix layers and revaporized to promote fragmentation of the matrix and facilitate removal. Megasonic energy may be transmitted via a transmission member to the adherent matrix through the solvent condensed thereon to loosen fragments and particles. The substrate is typically rotated to improve contact between the megasonic energy transmission member and the condensed solvent and achieve more uniform cleaning. A co-solvent which is soluble in the vapor phase solvent may be added to enhance removal of specific adherent matrix materials. A plasma pretreatment may be employed to react with and modify the matrix in a way that improves subsequent penetration by the vapor phase solvent and fragmentation of the adherent matrix for more complete removal from the substrate.

    摘要翻译: 通过将它们暴露于气相溶剂以将气相溶剂渗透到粘附基质层中并将气相溶剂冷凝到粘附基质中,从衬底去除粘附基质层,例如后蚀刻和其它后处理残余物 层并再蒸发以促进基质的碎裂并促进去除。 超声波能量可以通过透射构件通过其上冷凝的溶剂而传递到贴附基质,以松散碎片和颗粒。 通常旋转衬底以改善兆声波能量传递构件和冷凝溶剂之间的接触并实现更均匀的清洁。 可以加入可溶于气相溶剂的共溶剂以增强特定粘附基质材料的去除。 可以使用等离子体预处理来以改善随后的气相溶剂渗透和粘附基质的碎裂的方式与基质反应并改性,从而更好地从底物中除去。