公开(公告)号：US20120241847A1

公开(公告)日：2012-09-27

申请号：US13424340

申请日：2012-03-19

申请人： WATARU SAITO ,  SYOTARO ONO ,  TOSHIYUKI NAKA ,  SHUNJI TANIUCHI ,  MIHO WATANABE ,  HIROAKI YAMASHITA

发明人： WATARU SAITO ,  SYOTARO ONO ,  TOSHIYUKI NAKA ,  SHUNJI TANIUCHI ,  MIHO WATANABE ,  HIROAKI YAMASHITA

IPC分类号： H01L29/78

CPC分类号： H01L29/7811 ,  H01L21/266 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/66712

摘要： According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductive type, and a periodic array structure having a second semiconductor layer of a first conductive type and a third semiconductor layer of a second conductive type periodically arrayed on the first semiconductor layer in a direction parallel with a major surface of the first semiconductor layer. The second semiconductor layer and the third semiconductor layer are disposed in dots on the first semiconductor layer. A periodic structure in the outermost peripheral portion of the periodic array structure is different from a periodic structure of the periodic array structure in a portion other than the outermost peripheral portion.

摘要翻译： 根据一个实施例，半导体器件包括第一导电类型的第一半导体层，以及周期性阵列结构，其具有第一导电类型的第二半导体层和周期性排列在第一半导体上的第二导电类型的第三半导体层 层在与第一半导体层的主表面平行的方向上。 第二半导体层和第三半导体层以点形式设置在第一半导体层上。 周期性阵列结构的最外围部分中的周期性结构不同于最外周部​​分以外的部分的周期性阵列结构的周期性结构。

公开(公告)号：US20120241817A1

公开(公告)日：2012-09-27

申请号：US13424342

申请日：2012-03-19

申请人： WATARU SAITO ,  SYOTARO ONO ,  TOSHIYUKI NAKA ,  SHUNJI TANIUCHI ,  MIHO WATANABE ,  HIROAKI YAMASHITA

发明人： WATARU SAITO ,  SYOTARO ONO ,  TOSHIYUKI NAKA ,  SHUNJI TANIUCHI ,  MIHO WATANABE ,  HIROAKI YAMASHITA

IPC分类号： H01L29/78

CPC分类号： H01L29/66666 ,  B82Y10/00 ,  H01L29/0634 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/165 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66977 ,  H01L29/7828

摘要： According to an embodiment, a semiconductor device includes a first semiconductor layer, a second semiconductor layer, a control electrode, a third semiconductor layer, first and second main electrodes. The second semiconductor layer is provided on the first semiconductor layer, and has a higher impurity concentration than the first semiconductor layer. The control electrode is provided inside a first trench with an insulating film interposed, the first trench reaching the first semiconductor layer from a front surface of the second semiconductor layer. The third semiconductor layer is provided inside a second trench and including SixGe1-x or SixGeyC1-x-y, the second trench reaching the first semiconductor layer from the front surface of the second semiconductor layer and being adjacent to the first trench with the second semiconductor layer interposed. The first main electrode is connected to the first semiconductor layer, and the second main electrode is connected to the third semiconductor layer.

摘要翻译： 根据实施例，半导体器件包括第一半导体层，第二半导体层，控制电极，第三半导体层，第一和第二主电极。 第二半导体层设置在第一半导体层上，并且具有比第一半导体层更高的杂质浓度。 控制电极设置在第一沟槽内部，绝缘膜被插入，第一沟槽从第二半导体层的前表面到达第一半导体层。 第三半导体层设置在第二沟槽内并且包括SixGe1-x或SixGeyC1-xy，第二沟槽从第二半导体层的前表面到达第一半导体层并且与第一沟槽相邻，第二半导体层插入 。 第一主电极连接到第一半导体层，第二主电极连接到第三半导体层。

公开(公告)号：US20100187604A1

公开(公告)日：2010-07-29

申请号：US12692527

申请日：2010-01-22

申请人： SYOTARO ONO ,  Wataru Saito ,  Nana Hatano ,  Hiroshi Ohta ,  Miho Watanabe

发明人： SYOTARO ONO ,  Wataru Saito ,  Nana Hatano ,  Hiroshi Ohta ,  Miho Watanabe

IPC分类号： H01L29/78

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66712 ,  H01L29/7397

摘要： A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor region of the first conductivity type on the semiconductor substrate, and a plurality of second semiconductor regions of a second conductivity type disposed separately in the first semiconductor region. A difference between a charge quantity expressed by an integral value of a net activated doping concentration in the second semiconductor regions in the surface direction of the semiconductor substrate and a charge quantity expressed by an integral value of a net activated doping concentration in the first semiconductor region in the surface direction of the semiconductor substrate is always a positive quantity and becomes larger from the depth of the first junction plane to a depth of a second junction plane on an opposite side from the first junction plane.

摘要翻译： 半导体器件包括第一导电类型的半导体衬底，半导体衬底上的第一导电类型的第一半导体区域和分开设置在第一半导体区域中的多个第二导电类型的第二半导体区域。 由半导体衬底的表面方向上的第二半导体区域中的净活化掺杂浓度的积分值表示的电荷量与由第一半导体区域中的净活化掺杂浓度的积分值表示的电荷量之间的差异 在半导体基板的表面方向总是为正量，并且从第一接合面的深度到与第一接合面相反的一侧的第二接合面的深度变得更大。