公开(公告)号：US09637837B2

公开(公告)日：2017-05-02

申请号：US13968356

申请日：2013-08-15

Applicant: WISCONSIN ALUMNI RESEARCH FOUNDATION

Inventor： Xudong Wang ,  Fei Wang ,  Alexander V. Kvit

IPC: C30B7/14 ,  C30B29/16 ,  C30B29/60 ,  C30B7/04

CPC classification number: C30B7/14 ,  C30B7/04 ,  C30B29/16 ,  C30B29/60

Abstract: Methods of making electrically conductive, doped zinc oxide nanowires and nanowire films are provided. The methods comprises the steps of forming an aqueous solution comprising a dopant-containing precursor salt, a zinc-containing precursor salt and a pH buffering agent and heating the aqueous solution to a temperature below its boiling point in the presence of seed crystals, whereby doped zinc oxide nanowires are grown in situ from the seed crystals in the aqueous solution.

公开(公告)号：US09058993B2

公开(公告)日：2015-06-16

申请号：US13892446

申请日：2013-05-13

Applicant: Wisconsin Alumni Research Foundation

Inventor： Xudong Wang ,  Zhenqiang Ma ,  Fei Wang ,  Jung-Hun Seo

IPC: H01L29/12 ,  H01L21/02 ,  C30B7/14 ,  C30B29/16 ,  H01L29/786 ,  H01L33/28

CPC classification number: H01L21/02628 ,  C30B7/14 ,  C30B29/16 ,  H01L21/02554 ,  H01L21/0259 ,  H01L29/7869 ,  H01L33/28

Abstract: The present invention provides continuous, free-standing metal oxide films and methods for making said films. The methods are able to produce large-area, flexible, thin films having one or more continuous, single-crystalline metal oxide domains. The methods include the steps of forming a surfactant monolayer at the surface of an aqueous solution, wherein the headgroups of the surfactant molecules provide a metal oxide film growth template. When metal ions in the aqueous solution are exposed to the metal oxide film growth template in the presence of hydroxide ions under suitable conditions, a continuous, free-standing metal oxide film can be grown from the film growth template downward into the aqueous solution.

Abstract translation: 本发明提供连续的，独立的金属氧化物膜和制备所述膜的方法。 该方法能够生产具有一个或多个连续的单晶金属氧化物畴的大面积，柔性的薄膜。 所述方法包括在水溶液表面形成表面活性剂单层的步骤，其中表面活性剂分子的头基提供金属氧化物膜生长模板。 当水溶液中的金属离子在合适的条件下在氢氧根离子存在下暴露于金属氧化物膜生长模板时，可以将连续的自立式金属氧化物膜从膜生长模板向下生长到水溶液中。

公开(公告)号：US20140134793A1

公开(公告)日：2014-05-15

申请号：US13892446

申请日：2013-05-13

Applicant: Wisconsin Alumni Research Foundation

Inventor： Xudong Wang ,  Zhenqiang Ma ,  Fei Wang ,  Jung-Hun Seo

IPC: H01L21/02

CPC classification number: H01L21/02628 ,  C30B7/14 ,  C30B29/16 ,  H01L21/02554 ,  H01L21/0259 ,  H01L29/7869 ,  H01L33/28

Abstract: The present invention provides continuous, free-standing metal oxide films and methods for making said films. The methods are able to produce large-area, flexible, thin films having one or more continuous, single-crystalline metal oxide domains. The methods include the steps of forming a surfactant monolayer at the surface of an aqueous solution, wherein the headgroups of the surfactant molecules provide a metal oxide film growth template. When metal ions in the aqueous solution are exposed to the metal oxide film growth template in the presence of hydroxide ions under suitable conditions, a continuous, free-standing metal oxide film can be grown from the film growth template downward into the aqueous solution.

Abstract translation: 本发明提供连续的，独立的金属氧化物膜和制备所述膜的方法。 该方法能够生产具有一个或多个连续的单晶金属氧化物畴的大面积，柔性的薄膜。 所述方法包括在水溶液表面形成表面活性剂单层的步骤，其中表面活性剂分子的头基提供金属氧化物膜生长模板。 当水溶液中的金属离子在合适的条件下在氢氧根离子存在下暴露于金属氧化物膜生长模板时，可以将连续的自立式金属氧化物膜从膜生长模板向下生长到水溶液中。