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    Process for producing polycrystalline silicon
    1.
    发明授权
    Process for producing polycrystalline silicon 有权

    公开(公告)号：US09771651B2

    公开(公告)日：2017-09-26

    申请号：US15032227

    申请日：2014-10-17

    申请人： Wacker Chemie AG

    发明人： Hanns Wochner

    IPC分类号： C23C16/24 ,  C01B33/03 ,  C23C16/442 ,  C01B33/027 ,  C01B33/035 ,  F24F3/16

    CPC分类号： C23C16/442 ,  C01B33/027 ,  C01B33/03 ,  C01B33/035 ,  F24F3/161

    摘要： Polycrystalline silicon with low contamination by impurities, especially boron and phosphorus, is manufactured by the Siemens process or by the fluidized bed process, in which deposition of polycrystalline silicon takes place in a reactor maintained within a clean room of the 1 to 100,000 class, and air entering the facility enclosing the reactors is filtered by a multiple stage filtration system wherein coarse and fine filter elements contain less than 0.1% by weight of boron and phosphorus and less than 0.01% by weight of arsenic and aluminum. Following production of the polycrystalline silicon, the polycrystalline silicon may be further treated by steps such as comminution, classifying, wet-chemical treatment, and packing, all these further steps also preferably taking place within a clean room of the 1 to 100,000 class.

    Polycrystalline silicon chunks and method for producing them
    4.
    发明授权
    Polycrystalline silicon chunks and method for producing them 有权
    多晶硅块及其制造方法

    公开(公告)号：US09266741B2

    公开(公告)日：2016-02-23

    申请号：US13952050

    申请日：2013-07-26

    申请人： Wacker Chemie AG

    发明人： Hanns Wochner ,  Laszlo Fabry

    IPC分类号： C01B33/00 ,  C01B33/037 ,  C22C29/08 ,  B02C19/00 ,  B02C4/30 ,  C30B29/06 ,  C01B33/02 ,  C22C38/00 ,  C30B35/00

    CPC分类号： C01B33/037 ,  B02C4/305 ,  B02C19/0056 ,  C01B33/02 ,  C22C29/08 ,  C22C38/00 ,  C30B29/06 ,  C30B35/007 ,  Y10T428/2982

    摘要： The present invention relates to polycrystalline silicon chunks which are cubic and have a metal content of less than 200 pptw and a dopant content of less than 50 ppta. Methods for producing polycrystalline silicon chunks, include the steps of providing a polycrystalline silicon rod, comminuting the polycrystalline silicon rod into cubic chunks, and cleaning the polycrystalline silicon chunks, wherein comminution takes place using a spiked-roll crusher having at least one spiked roll, the spiked roll including W2C phases or WC phases with 0.1-10% of a metal carbide selected from the group consisting of titanium carbide, chromium carbide, molybdenum carbide, vanadium carbide, and nickel carbide or consisting of steel with 1-25% W.

    摘要翻译： 本发明涉及立方体并且金属含量小于200pptw并且掺杂剂含量小于50ppta的多晶硅块。 制造多晶硅块的方法包括以下步骤：提供多晶硅棒，将多晶硅棒粉碎成立方体块，以及清洗多晶硅块，其中使用具有至少一个加标辊的加标辊式破碎机进行粉碎， 所述加标辊包括W2C相或WC相，其中0.1-10％的选自碳化钛，碳化铬，碳化钼，碳化钒和碳化镍的金属碳化物或由1-25％W的钢组成。