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    Coated cutting tool
    4.
    发明授权
    Coated cutting tool 有权

    公开(公告)号：US09725811B2

    公开(公告)日：2017-08-08

    申请号：US14772580

    申请日：2014-03-04

    Applicant: TUNGALOY CORPORATION

    Inventor： Masakazu Kikuchi

    IPC: B23B27/14 ,  C23C30/00 ,  C01B33/00 ,  C23C14/06

    CPC classification number: C23C30/00 ,  B23B27/148 ,  B23B2228/105 ,  C01B33/00 ,  C23C14/0664 ,  C23C30/005

    Abstract: A coated cutting tool has a substrate and a coating layer. At least one layer of the coating layer is a coarse grain layer with an average layer thickness of 0.2 to 10 μm and an average grain diameter in excess of 200 nm measured at the direction parallel to the interface of the coating layer. A composition of the layer is represented by (AlaTibMc)X, wherein M represents at least one of Zr, Hf, V, Nb, Ta, Cr, Mo, W, Y, B and Si, X represents at least one of C, N and O, and a, b and c represents atomic ratios of Al, Ti and M relative to one another such that 0.30≦a≦0.65, 0.35≦0.70, 0≦c≦0.20 and a+b+c=1.

    SOLID STATE CATHOLYTE OR ELECTROLYTE FOR BATTERY USING LiaMPbSc (M=Si, Ge, and/or Sn)
    7.
    发明申请
    SOLID STATE CATHOLYTE OR ELECTROLYTE FOR BATTERY USING LiaMPbSc (M=Si, Ge, and/or Sn) 有权
    使用LiaMPbSc（M = Si，Ge和/或Sn）的电池的固态电解质或电解质

    公开(公告)号：US20150171465A1

    公开(公告)日：2015-06-18

    申请号：US14618979

    申请日：2015-02-10

    Applicant: QuantumScape Corporation

    Inventor： Cheng Chieh Chao ,  Zhebo Chen ,  Tim Holme ,  Marie A. Mayer ,  Gilbert N. Riley, JR.

    IPC: H01M10/0562

    CPC classification number: H01M4/624 ,  C01B33/00 ,  C01P2006/40 ,  H01M2/1673 ,  H01M4/131 ,  H01M4/136 ,  H01M4/366 ,  H01M4/505 ,  H01M4/525 ,  H01M4/582 ,  H01M4/5825 ,  H01M4/62 ,  H01M10/0525 ,  H01M10/056 ,  H01M10/0562 ,  H01M2220/20 ,  H01M2220/30 ,  H01M2300/0068 ,  H01M2300/0071 ,  H01M2300/0074 ,  Y02E60/122 ,  Y02P70/54 ,  Y02T10/7011

    Abstract: The present invention provides an energy storage device comprising a cathode region or other element. The device has a major active region comprising a plurality of first active regions spatially disposed within the cathode region. The major active region expands or contracts from a first volume to a second volume during a period of a charge and discharge. The device has a catholyte material spatially confined within a spatial region of the cathode region and spatially disposed within spatial regions not occupied by the first active regions. In an example, the catholyte material comprises a lithium, germanium, phosphorous, and sulfur (“LGPS”) containing material configured in a polycrystalline state. The device has an oxygen species configured within the LGPS containing material, the oxygen species having a ratio to the sulfur species of 1:2 and less to form a LGPSO material. The device has a protective material formed overlying exposed regions of the cathode material to substantially maintain the sulfur species within the catholyte material. Also included is a novel dopant configuration of the LiaMPbSc (LMPS) [M=Si,Ge, and/or Sn] containing material.

    Abstract translation: 本发明提供一种包括阴极区域或其他元件的能量存储装置。 该器件具有主要的有源区域，其包括空间上设置在阴极区域内的多个第一有源区域。 在充电和放电期间，主要活动区域从第一容积扩大或收缩至第二容积。 该装置具有空间上限制在阴极区域的空间区域内的阴极电解质材料，并且空间地设置在不被第一有源区域占据的空间区域内。 在一个实例中，阴极电解质材料包含配置为多晶状态的含锂，锗，磷和硫（“LGPS”）的材料。 该装置具有配置在含LGPS的材料内的氧气种类，其中氧物质的比例与硫物质的比例为1:2以下，以形成LGPSO材料。 该装置具有形成在阴极材料的暴露区域之上的保护材料，以将硫物质基本上保持在阴极电解质材料内。 还包括LiaMPbSc（LMPS）[M = Si，Ge和/或Sn]材料的新型掺杂剂配置。

    Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes
    8.
    发明授权
    Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes 有权
    通过升华/缩合工艺制造大型均匀碳化硅锭的方法

    公开(公告)号：US08765091B2

    公开(公告)日：2014-07-01

    申请号：US12744532

    申请日：2008-10-08

    Applicant: Mark Loboda ,  Seung Ho Park ,  Victor Torres

    Inventor： Mark Loboda ,  Seung Ho Park ,  Victor Torres

    IPC: C01B31/36 ,  C01B33/08 ,  C01B33/06 ,  C01B31/30 ,  C01B33/00 ,  C30B25/00

    CPC classification number: C01B31/36 ,  C01B32/90 ,  C01B32/956 ,  C01B33/00 ,  C01P2006/80 ,  C30B23/00 ,  C30B25/005 ,  C30B29/36

    Abstract: This invention relates to a method for the manufacture of monolithic ingot of silicon carbide comprising: i) introducing a mixture comprising polysilicon metal chips and carbon powder into a cylindrical reaction cell having a lid; ii) sealing the cylindrical reaction cell of i); iii) introducing the cylindrical reaction cell of ii) into a vacuum furnace; iv) evacuating the furnace of iii); v) filling the furnace of iv) with a gas mixture which is substantially inert gas to near atmospheric pressure; vi) heating the cylindrical reaction cell in the furnace of v) to a temperature of from 1600 to 2500° C.; vii) reducing the pressure in the cylindrical reaction cell of vi) to less than 50 torr but not less than 0.05 torr; and viii) allowing for substantial sublimation and condensation of the vapors on the inside of the lid of the cylindrical reaction cell of vii).

    Abstract translation: 本发明涉及一种用于制造碳化硅整块锭的方法，包括：i）将包含多晶硅金属屑和碳粉的混合物引入具有盖的圆柱形反应池中; ii）密封i）的圆柱形反应池; iii）将ii）的圆柱形反应池引入真空炉; iv）抽出炉膛iii）; v）用基本上惰性气体的气体混合物将iv）的炉子填充到接近大气压; vi）将炉内的圆柱形反应池加热至1600至2500℃的温度; vii）将vi）的圆柱形反应池中的压力降低到小于50托，但不小于0.05托; 和viii）允许蒸发器在vii）的圆柱形反应池的盖的内部上的实质升华和冷凝。

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