公开(公告)号：US20160211262A1

公开(公告)日：2016-07-21

申请号：US14914614

申请日：2013-09-25

申请人： Walid M. HAFEZ ,  Chia-Hong JAN ,  Jeng-Ya D. YEH ,  Hsu-Yu CHANG ,  Neville DIAS ,  Chanaka MUNASINGHE

发明人： CHIA-HONG JAN ,  WALID M HAFEZ ,  JENG-YA DAVID YEH ,  HSU-YU CHANG ,  NEVILLE L DIAS ,  CHANAKA D MUNASINGHE

IPC分类号： H01L27/092 ,  H01L21/225 ,  H01L29/10 ,  H01L21/8238 ,  H01L29/08 ,  H01L29/06

CPC分类号： H01L27/0924 ,  H01L21/2256 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L21/823892 ,  H01L27/0928 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/66803 ,  H01L29/7851

摘要： An impurity source film is formed along a portion of a non-planar semiconductor fin structure. The impurity source film may serve as source of an impurity that becomes electrically active subsequent to diffusing from the source film into the semiconductor fin. In one embodiment, an impurity source film is disposed adjacent to a sidewall surface of a portion of a sub-fin region disposed between an active region of the fin and the substrate and is more proximate to the substrate than to the active area. In further embodiments, the impurity source film may provide a source of dopant that renders the sub-fin region complementarily doped relative to a region of the substrate forming a P/N junction that is at least part of an isolation structure electrically isolating the active fin region from a region of the substrate.

摘要翻译： 沿着非平面半导体鳍片结构的一部分形成杂质源膜。 杂质源膜可以作为从源膜扩散到半导体鳍中而变得电活性的杂质源。 在一个实施例中，杂质源膜被布置成邻近鳍片的有源区域和衬底之间的亚鳍片区域的一部分的侧壁表面，并且比与有源区域更靠近衬底。 在另外的实施例中，杂质源膜可以提供掺杂源，其相对于形成P / N结的衬底的区域互补掺杂，所述P / N结是隔离结构的至少一部分，电绝缘活性鳍 区域。