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    Source/Drain Carbon Implant and RTA Anneal, Pre-SiGe Deposition
    1.
    发明申请
    Source/Drain Carbon Implant and RTA Anneal, Pre-SiGe Deposition 有权
    来源/排水碳植入物和RTA退火，前SiGe沉积

    公开(公告)号：US20110027955A1

    公开(公告)日：2011-02-03

    申请号：US12904878

    申请日：2010-10-14

    申请人： Wei-Yen Woon ,  Chun-Feng Nieh ,  Ching-Yi Chen ,  Hsun Chang ,  Chung-Ru Yang ,  Li-Te S. Lin

    发明人： Wei-Yen Woon ,  Chun-Feng Nieh ,  Ching-Yi Chen ,  Hsun Chang ,  Chung-Ru Yang ,  Li-Te S. Lin

    IPC分类号： H01L21/336

    CPC分类号： H01L21/26586 ,  H01L21/26506 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66636 ,  H01L29/7848

    摘要： A semiconductor device system, structure, and method of manufacture of a source/drain to retard dopant out-diffusion from a stressor are disclosed. An illustrative embodiment comprises a semiconductor substrate, device, and method to retard sidewall dopant out-diffusion in source/drain regions. A semiconductor substrate is provided with a gate structure, and a source and drain on opposing sides of the gate structure. Recessed regions are etched in a portion of the source and drain. Doped stressors are embedded into the recessed regions. A barrier dopant is incorporated into a remaining portion of the source and drain.

    摘要翻译： 公开了一种半导体器件系统，结构和制造源极/漏极的方法，以阻止掺杂剂从胁迫源向外扩散。 示例性实施例包括半导体衬底，器件和方法，用于延迟源极/漏极区域中的侧向掺杂剂扩散。 半导体衬底设置有栅极结构，栅极结构的相对侧上具有源极和漏极。 在源极和漏极的一部分中蚀刻凹入的区域。 掺杂的应激物嵌入到凹陷区域中。 势垒掺杂剂掺入源极和漏极的剩余部分中。

    Source/drain carbon implant and RTA anneal, pre-SiGe deposition
    2.
    发明授权
    Source/drain carbon implant and RTA anneal, pre-SiGe deposition 有权
    源极/漏极碳植入物和RTA退火，SiGe沉积

    公开(公告)号：US08404546B2

    公开(公告)日：2013-03-26

    申请号：US12904878

    申请日：2010-10-14

    申请人： Wei-Yen Woon ,  Chun-Feng Nieh ,  Ching-Yi Chen ,  Hsun Chang ,  Chung-Ru Yang ,  Li-Te S. Lin

    发明人： Wei-Yen Woon ,  Chun-Feng Nieh ,  Ching-Yi Chen ,  Hsun Chang ,  Chung-Ru Yang ,  Li-Te S. Lin

    IPC分类号： H01L21/265 ,  H01L29/78 ,  H01L21/336

    CPC分类号： H01L21/26586 ,  H01L21/26506 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66636 ,  H01L29/7848

    摘要： A semiconductor device system, structure, and method of manufacture of a source/drain to retard dopant out-diffusion from a stressor are disclosed. An illustrative embodiment comprises a semiconductor substrate, device, and method to retard sidewall dopant out-diffusion in source/drain regions. A semiconductor substrate is provided with a gate structure, and a source and drain on opposing sides of the gate structure. Recessed regions are etched in a portion of the source and drain. Doped stressors are embedded into the recessed regions. A barrier dopant is incorporated into a remaining portion of the source and drain.

    摘要翻译： 公开了一种半导体器件系统，结构和制造源极/漏极的方法，以阻止掺杂剂从胁迫源向外扩散。 示例性实施例包括半导体衬底，器件和方法，用于延迟源极/漏极区域中的侧向掺杂剂扩散。 半导体衬底设置有栅极结构，栅极结构的相对侧上具有源极和漏极。 在源极和漏极的一部分中蚀刻凹入的区域。 掺杂的应激物嵌入到凹陷区域中。 势垒掺杂剂掺入源极和漏极的剩余部分中。

    Source/drain carbon implant and RTA anneal, pre-SiGe deposition
    3.
    发明授权
    Source/drain carbon implant and RTA anneal, pre-SiGe deposition 有权
    源极/漏极碳植入物和RTA退火，SiGe沉积

    公开(公告)号：US07838887B2

    公开(公告)日：2010-11-23

    申请号：US12112507

    申请日：2008-04-30

    申请人： Wei-Yen Woon ,  Chun-Feng Nieh ,  Ching-Yi Chen ,  Hsun Chang ,  Chung-Ru Yang ,  Li-Te S. Lin

    发明人： Wei-Yen Woon ,  Chun-Feng Nieh ,  Ching-Yi Chen ,  Hsun Chang ,  Chung-Ru Yang ,  Li-Te S. Lin

    IPC分类号： H01L21/00

    CPC分类号： H01L21/26586 ,  H01L21/26506 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66636 ,  H01L29/7848

    摘要： A semiconductor device system, structure, and method of manufacture of a source/drain to retard dopant out-diffusion from a stressor are disclosed. An illustrative embodiment comprises a semiconductor substrate, device, and method to retard sidewall dopant out-diffusion in source/drain regions. A semiconductor substrate is provided with a gate structure, and a source and drain on opposing sides of the gate structure. Recessed regions are etched in a portion of the source and drain. Doped stressors are embedded into the recessed regions. A barrier dopant is incorporated into a remaining portion of the source and drain.

    摘要翻译： 公开了一种半导体器件系统，结构和制造源极/漏极的方法，以阻止掺杂剂从胁迫源向外扩散。 示例性实施例包括半导体衬底，器件和方法，用于延迟源极/漏极区域中的侧向掺杂剂扩散。 半导体衬底设置有栅极结构，栅极结构的相对侧上具有源极和漏极。 在源极和漏极的一部分中蚀刻凹入的区域。 掺杂的应激物嵌入到凹陷区域中。 势垒掺杂剂掺入源极和漏极的剩余部分中。

    Source/Drain Carbon Implant and RTA Anneal, Pre-SiGe Deposition
    4.
    发明申请
    Source/Drain Carbon Implant and RTA Anneal, Pre-SiGe Deposition 有权
    来源/排水碳植入物和RTA退火，前SiGe沉积

    公开(公告)号：US20090273034A1

    公开(公告)日：2009-11-05

    申请号：US12112507

    申请日：2008-04-30

    申请人： Wei-Yen Woon ,  Chun-Feng Nieh ,  Ching-Yi Chen ,  Hsun Chang ,  Chung-Ru Yang ,  Li-Te S. Lin

    发明人： Wei-Yen Woon ,  Chun-Feng Nieh ,  Ching-Yi Chen ,  Hsun Chang ,  Chung-Ru Yang ,  Li-Te S. Lin

    IPC分类号： H01L21/336 ,  H01L29/78

    CPC分类号： H01L21/26586 ,  H01L21/26506 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66636 ,  H01L29/7848

    摘要： A semiconductor device system, structure, and method of manufacture of a source/drain to retard dopant out-diffusion from a stressor are disclosed. An illustrative embodiment comprises a semiconductor substrate, device, and method to retard sidewall dopant out-diffusion in source/drain regions. A semiconductor substrate is provided with a gate structure, and a source and drain on opposing sides of the gate structure. Recessed regions are etched in a portion of the source and drain. Doped stressors are embedded into the recessed regions. A barrier dopant is incorporated into a remaining portion of the source and drain.

    摘要翻译： 公开了一种半导体器件系统，结构和制造源极/漏极的方法，以阻止掺杂剂从胁迫源向外扩散。 示例性实施例包括半导体衬底，器件和方法，用于延迟源极/漏极区域中的侧向掺杂剂扩散。 半导体衬底设置有栅极结构，栅极结构的相对侧上具有源极和漏极。 在源极和漏极的一部分中蚀刻凹入的区域。 掺杂的应激物嵌入到凹陷区域中。 势垒掺杂剂掺入源极和漏极的剩余部分中。

    Light-emitting diode packaging structure of low angular correlated color temperature deviation
    5.
    发明授权
    Light-emitting diode packaging structure of low angular correlated color temperature deviation 有权
    发光二极管封装结构的低角度相关色温偏差

    公开(公告)号：US08552456B1

    公开(公告)日：2013-10-08

    申请号：US13491255

    申请日：2012-06-07

    申请人： Ching-Cherng Sun ,  Ching-Yi Chen ,  Chih-Yu Chiu

    发明人： Ching-Cherng Sun ,  Ching-Yi Chen ,  Chih-Yu Chiu

    IPC分类号： H01L33/00

    CPC分类号： H01L33/505 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A light-emitting diode (LED) packaging structure having low angular correlated color temperature deviation includes: a substrate, a LED chip, a phosphor body, and a transparent lens. The LED chip is disposed on the substrate, and the phosphor body includes a hemisphere body and an extension part extended from the bottom of the hemisphere body. The phosphor body is disposed on the substrate and covers the LED chip. Besides, the transparent lens is disposed outside the phosphor body to cover the phosphor body to increase light extraction efficiency. With the implementation of the present invention, the setup of the extension part makes a longer vertical distance between the LED chip and the top of the phosphor body, so that the light in the normal direction of the LED chip can have a longer optical length, thereby to reduce the angular correlated color temperature deviation.

    摘要翻译： 具有低角度相关色温偏差的发光二极管（LED）封装结构包括：基板，LED芯片，荧光体和透明透镜。 LED芯片设置在基板上，荧光体包括半球体和从半球体的底部延伸的延伸部。 荧光体设置在基板上并覆盖LED芯片。 此外，透明透镜设置在荧光体的外侧，以覆盖荧光体以提高光提取效率。 通过本发明的实现，扩展部的设置使得LED芯片和荧光体的顶部之间的垂直距离更长，使得LED芯片的法线方向的光可以具有更长的光学长度， 从而减小角度相关色温偏差。

    Method of fabricating hollow waveguide having cyclic geometric structure
    8.
    发明申请
    Method of fabricating hollow waveguide having cyclic geometric structure 有权
    制造具有循环几何结构的中空波导的方法

    公开(公告)号：US20080251497A1

    公开(公告)日：2008-10-16

    申请号：US11808134

    申请日：2007-06-06

    申请人： Chii-Chang Chen ,  Ya-Lun Tsai ,  Ching-Yi Chen ,  Jenq-Yang Chang

    发明人： Chii-Chang Chen ,  Ya-Lun Tsai ,  Ching-Yi Chen ,  Jenq-Yang Chang

    IPC分类号： B29D11/00

    CPC分类号： B29D11/00663 ,  G02B6/00

    摘要： A waveguide has a hollow center. The waveguide has dielectric tubes which have a geometric arrangement, like a triangle-lattice arrangement. A laser transmitted in the waveguide is confined and is emitted out with a narrow expending angle. Hence, the laser is emitted straightly forwarded and has a low power loss. The present invention is suitable for using in a high-power laser and obtaining a directive microwave.

    摘要翻译： 波导具有中空的中心。 波导具有具有几何布置的电介质管，如三角形 - 格子布置。 在波导中传输的激光器被限制并以窄的扩展角度发射出去。 因此，激光被直接发射并具有低功率损耗。 本发明适用于大功率激光器和获得微波指令。

    Electric nailing apparatus
    9.
    发明授权
    Electric nailing apparatus 失效
    电动打钉机

    公开(公告)号：US07121443B2

    公开(公告)日：2006-10-17

    申请号：US11070861

    申请日：2005-03-02

    申请人： Pei-Li Sun ,  Ching-Yi Chen

    发明人： Pei-Li Sun ,  Ching-Yi Chen

    IPC分类号： B25C1/06

    CPC分类号： B25C1/06

    摘要： An electric nailing apparatus includes a triggering member, a rotatable rod member including first and second sustaining structures, a transmission rod having a first protrusion structure, a motor member and a ram block sustained against a fixture element via a resilience element. In response to a rotation of a gear member, the ram block glides to compress the resilience element and then touch the first protrusion structure. In response to an external force, the triggering member moves to have the first sustaining structure touch a first switch device to start the motor member. After the ram block touches the first protrusion structure, the second sustaining structure is simultaneously stirred by the transmission rod to have the first sustaining structure detached from the first switch device, thereby stopping the motor member and providing a nailing energy to the ram block in response to a recovery force of the resilience element.

    摘要翻译： 电动打钉装置包括触发构件，包括第一和第二维持结构的可旋转杆构件，具有第一突出结构的传动杆，马达构件和通过弹性元件抵靠固定件的冲头块。 响应于齿轮构件的旋转，压头块滑动以压缩弹性元件，然后接触第一突起结构。 响应于外力，触发构件移动以使第一维持结构接触第一开关装置以起动电动机构件。 在压头块接触第一突起结构之后，第二维持结构被传动杆同时搅动以使第一维持结构与第一开关装置分离，从而停止电动机构件并响应于冲压块提供钉扎能量 到弹性元件的恢复力。

    ELECTRIC NAILING APPARATUS
    10.
    发明申请
    ELECTRIC NAILING APPARATUS 失效
    电动装置

    公开(公告)号：US20060196911A1

    公开(公告)日：2006-09-07

    申请号：US11070861

    申请日：2005-03-02

    申请人： Pei-Li Sun ,  Ching-Yi Chen

    发明人： Pei-Li Sun ,  Ching-Yi Chen

    IPC分类号： B25C5/02

    CPC分类号： B25C1/06

    摘要： An electric nailing apparatus includes a triggering member, a rotatable rod member including first and second sustaining structures, a transmission rod having a first protrusion structure, a motor member and a ram block sustained against a fixture element via a resilience element. In response to a rotation of a gear member, the ram block glides to compress the resilience element and then touch the first protrusion structure. In response to an external force, the triggering member moves to have the first sustaining structure touch a first switch device to start the motor member. After the ram block touches the first protrusion structure, the second sustaining structure is simultaneously stirred by the transmission rod to have the first sustaining structure detached from the first switch device, thereby stopping the motor member and providing a nailing energy to the ram block in response to a recovery force of the resilience element.

    摘要翻译： 电动打钉装置包括触发构件，包括第一和第二维持结构的可旋转杆构件，具有第一突出结构的传动杆，马达构件和通过弹性元件抵靠固定件的冲头块。 响应于齿轮构件的旋转，压头块滑动以压缩弹性元件，然后接触第一突起结构。 响应于外力，触发构件移动以使第一维持结构接触第一开关装置以起动电动机构件。 在压头块接触第一突起结构之后，第二维持结构被传动杆同时搅动以使第一维持结构与第一开关装置分离，从而停止电动机构件并响应于冲压块提供钉扎能量 到弹性元件的恢复力。