METHOD OF REMOVING INSULATING LAYER ON SUBSTRATE
    3.
    发明申请
    METHOD OF REMOVING INSULATING LAYER ON SUBSTRATE 审中-公开
    在基板上去除绝缘层的方法

    公开(公告)号:US20080261402A1

    公开(公告)日:2008-10-23

    申请号:US11736006

    申请日:2007-04-17

    CPC classification number: H01L21/31053 H01L21/02065

    Abstract: A method of removing an insulating layer on a substrate is described, including a first CMP process and a second CMP process performed in sequence, wherein the polishing slurry used in the first CMP process and that used in the second CMP process have substantially the same pH value that exceeds 7.0. A cleaning step is conducted between the first and the second CMP processes to remove a specific substance which would otherwise cause undesired particles to form in the second CMP process.

    Abstract translation: 描述了去除衬底上的绝缘层的方法,包括依次执行的第一CMP工艺和第二CMP工艺,其中在第一CMP工艺中使用的抛光浆料和在第二CMP工艺中使用的抛光浆料具有基本上相同的pH 价值超过7.0。 在第一和第二CMP工艺之间进行清洁步骤以除去否则会在第二CMP工艺中导致不期望的颗粒形成的特定物质。

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