公开(公告)号：US06482573B1

公开(公告)日：2002-11-19

申请号：US09492216

申请日：2000-01-27

申请人： Jayendra D. Bhakta ,  Zicheng Gary Ling ,  Weizhong Wang ,  Warren T. Yu ,  Eric Kent

发明人： Jayendra D. Bhakta ,  Zicheng Gary Ling ,  Weizhong Wang ,  Warren T. Yu ,  Eric Kent

IPC分类号： G03C556

CPC分类号： G03F7/70625 ,  Y10S430/151

摘要： Critical dimension variation of photolithographically formed features on a semiconductor substrate is reduced by measuring the reflectivity of a photoresist layer and an underlying layer, such as a polysilicon layer, and adjusting the exposure level of the photoresist in accordance with the measured reflectivity. This allows precise control of feature width on the photoresist, which in turn allows precision etching of the underlying layer to accurately form a feature, such as a gate electrode.

摘要翻译： 通过测量光致抗蚀剂层和诸如多晶硅层的下层的反射率，并根据所测量的反射率来调整光致抗蚀剂的曝光水平，可减少半导体衬底上的光刻形成特征的临界尺寸变化。 这允许对光致抗蚀剂上的特征宽度的精确控制，这又允许精确地蚀刻下层以精确地形成特征，例如栅电极。

公开(公告)号：US06303507B1

公开(公告)日：2001-10-16

申请号：US09487180

申请日：2000-01-19

申请人： Weizhong Wang ,  Jayendra D. Bhakta

发明人： Weizhong Wang ,  Jayendra D. Bhakta

IPC分类号： H01L21302

CPC分类号： B24B37/013 ,  B24B37/042 ,  B24B49/12 ,  B24B49/16

摘要： To attenuate a CMP polishing rate differential which tends to occur over the surface of a semiconductor substrate surface which has had one or more layers formed thereon, surface characteristics of the upper surface which are representative of the thickness, for example, of a layer which is being removed either in part or in its entirety, are monitored and surface profile information is developed using a suitable algorithm and used to control the timing with which force is applied by one or more of a plurality of actuators disposed on the other side of the wafer, in a manner wherein areas which have undergone more removal than others, are forced into contact with the polishing pad with a force which is reduced as compared that which is applied to localized high areas wherein a lesser amount of the layer has been removed.

摘要翻译： 为了衰减倾向于在其上形成有一层或多层的半导体衬底表面的表面上发生的CMP抛光速率差异，表示厚度的上表面的表面特性例如为 被部分地或全部地被去除，并且使用合适的算法来开发表面轮廓信息，并且用于控制由设置在晶片的另一侧上的多个致动器中的一个或多个致动器施加力的定时 以与其它方式相比经历更多去除的区域被强制与抛光垫接触的力相比，其被施加到其中较少量的层被去除的局部高区域的力减小。

公开(公告)号：US06309934B1

公开(公告)日：2001-10-30

申请号：US09508925

申请日：2000-01-06

申请人： Marty Peckerar ,  Weizhong Wang ,  John Melngailis

发明人： Marty Peckerar ,  Weizhong Wang ,  John Melngailis

IPC分类号： H01L21336

CPC分类号： H01L29/66575 ,  H01L21/0275 ,  H01L21/28123 ,  H01L21/823412 ,  H01L29/66537

摘要： Channel doping and gate lithography are simulatneously performed by focusing an ion beam into the wafer through a positive or negative photoresist that is sensitive to the ion beam. Additional fabrication is then performed to provide a gate that is self-aligned with the doped channel.

摘要翻译： 通过对离子束敏感的正或负光致抗蚀剂将离子束聚焦到晶片中来模拟通道掺杂和栅极光刻。 然后执行另外的制造以提供与掺杂沟道自对准的栅极。

公开(公告)号：US06380618B1

公开(公告)日：2002-04-30

申请号：US09811996

申请日：2001-03-19

申请人： Lei Wang ,  Weizhong Wang

发明人： Lei Wang ,  Weizhong Wang

IPC分类号： H01L2348

CPC分类号： H01L23/055 ,  H01L21/6833 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention compactly fabricates integrated circuits of an electronic system on a semiconductor wafer by fabricating the integrated circuits of the electronic system on both sides of a semiconductor wafer. A first face of an area of the semiconductor wafer is processed with an integrated circuit fabrication process step to fabricate part of a first integrated circuit thereon. In addition, a second face of the area of the semiconductor wafer is processed with the integrated circuit fabrication process step to fabricate part of a second integrated circuit thereon. The first face and the second face are processed for a plurality of integrated circuit fabrication process steps until the first integrated circuit is completely fabricated on the first face and the second integrated circuit is completely fabricated on the second face. The first face and the second face of the area of the semiconductor wafer may both be processed simultaneously or may be processed one face at a time depending on the fabrication process step. That area of the semiconductor wafer is then cut from the rest of the semiconductor wafer such that the first integrated circuit and the second integrated circuit are on a die to be used within an electronic system. The present invention may be used to particular advantage when the first integrated circuit includes at least one processor and when the second integrated circuit includes at least one processor. In that case, the die having the first integrated circuit and the second integrated circuit is used within a multiprocessor system. With the present invention, integrated circuits of an electronic system are compactly fabricated onto both sides of a semiconductor wafer.

摘要翻译： 本发明通过在半导体晶片的两侧制造电子系统的集成电路，紧凑地制造半导体晶片上的电子系统的集成电路。 利用集成电路制造工艺步骤对半导体晶片的区域的第一面进行处理，以在其上制造第一集成电路的一部分。 此外，通过集成电路制造工艺步骤处理半导体晶片的区域的第二面，以在其上制造第二集成电路的一部分。 处理第一面和第二面用于多个集成电路制造工艺步骤，直到第一集成电路完全制造在第一面上，并且第二集成电路完全制造在第二面上。 可以根据制造工艺步骤一次同时处理半导体晶片的区域的第一面和第二面，或者可以一次处理一个面。 然后从半导体晶片的其余部分切割半导体晶片的区域，使得第一集成电路和第二集成电路在待使用在电子系统内的管芯上。 当第一集成电路包括至少一个处理器和当第二集成电路包括至少一个处理器时，本发明可以被用于特别有利。 在这种情况下，具有第一集成电路和第二集成电路的管芯在多处理器系统内使用。 利用本发明，将电子系统的集成电路紧凑地制造在半导体晶片的两侧。

公开(公告)号：US09441577B2

公开(公告)日：2016-09-13

申请号：US13389795

申请日：2010-08-11

申请人： Dequan Liang ,  Weizhong Wang ,  Xiangfu Dai ,  Nian Li ,  Xingpu Wang ,  Peng Li ,  Shucheng Lu ,  Yuqiong Luo ,  Zhangying Li ,  Jinsong Tan ,  Dan Wu ,  Sen Lin

发明人： Dequan Liang ,  Weizhong Wang ,  Xiangfu Dai ,  Nian Li ,  Xingpu Wang ,  Peng Li ,  Shucheng Lu ,  Yuqiong Luo ,  Zhangying Li ,  Jinsong Tan ,  Dan Wu ,  Sen Lin

IPC分类号： F02M21/06 ,  B60P3/22 ,  G05D16/20

CPC分类号： F02M21/06 ,  B60P3/225 ,  G05D16/2033 ,  Y02T10/32 ,  Y10T137/6855 ,  Y10T137/7761 ,  Y10T137/86196 ,  Y10T137/86292 ,  Y10T137/87925

摘要： A pressure reducing system for fuel gas and a natural gas dewaxing vehicle are provided. The pressure reducing system includes fuel gas pipelines which consist of successively connected a high pressure pipeline, a medium pressure pipeline and a low pressure pipeline in the flow direction of fuel gas. The tail end of the low pressure pipeline connects with a combustion apparatus. A high pressure relief valve, a high pressure air feed valve, a heat exchanger and a primary pressure reducing valve subassembly are connected on the high pressure pipeline. The heat exchanger is provided with a hot fluid inlet and a hot fluid outlet, where the hot fluid inlet connects with a hot water apparatus, and the hot fluid outlet connects with a water storage apparatus. The medium pressure pipeline is equipped with a medium pressure relief valve and a secondary pressure reducing valve.

摘要翻译： 提供了一种用于燃料气体和天然气脱蜡车辆的减压系统。 减压系统包括燃料气管道，其包括在燃料气体的流动方向上连续连接高压管道，中压管道和低压管道。 低压管道的尾端与燃烧装置连接。 在高压管道上连接有高压溢流阀，高压空气供给阀，热交换器和主减压阀子组件。 热交换器设置有热流体入口和热流体出口，其中热流体入口与热水装置连接，热流体出口与储水装置连接。 中压管道配有中压安全阀和二次减压阀。

公开(公告)号：US06248647B1

公开(公告)日：2001-06-19

申请号：US09270257

申请日：1999-03-15

申请人： Lei Wang ,  Weizhong Wang

发明人： Lei Wang ,  Weizhong Wang

IPC分类号： H01L2146

CPC分类号： H01L23/544 ,  H01L21/78 ,  H01L2223/54453 ,  H01L2223/54493 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention compactly fabricates integrated circuits of an electronic system on a semiconductor wafer by fabricating the integrated circuits of the electronic system on both sides of a semiconductor wafer. A first face of an area of the semiconductor wafer is processed with an integrated circuit fabrication process step to fabricate part of a first integrated circuit thereon. In addition, a second face of the area of the semiconductor wafer is processed with the integrated circuit fabrication process step to fabricate part of a second integrated circuit thereon. The first face and the second face are processed for a plurality of integrated circuit fabrication process steps until the first integrated circuit is completely fabricated on the first face and the second integrated circuit is completely fabricated on the second face. The first face and the second face of the area of the semiconductor wafer may both be processed simultaneously or may be processed one face at a time depending on the fabrication process step. That area of the semiconductor wafer is then cut from the rest of the semiconductor wafer such that the first integrated circuit and the second integrated circuit are on a die to be used within an electronic system. The present invention may be used to particular advantage when the first integrated circuit includes at least one processor and when the second integrated circuit includes at least one processor. In that case, the die having the first integrated circuit and the second integrated circuit is used within a multiprocessor system. With the present invention, integrated circuits of an electronic system are compactly fabricated onto both sides of a semiconductor wafer.

摘要翻译： 本发明通过在半导体晶片的两侧制造电子系统的集成电路，紧凑地制造半导体晶片上的电子系统的集成电路。 利用集成电路制造工艺步骤对半导体晶片的区域的第一面进行处理，以在其上制造第一集成电路的一部分。 此外，通过集成电路制造工艺步骤处理半导体晶片的区域的第二面，以在其上制造第二集成电路的一部分。 处理第一面和第二面用于多个集成电路制造工艺步骤，直到第一集成电路完全制造在第一面上，并且第二集成电路完全制造在第二面上。 可以根据制造工艺步骤一次同时处理半导体晶片的区域的第一面和第二面，或者可以一次处理一个面。 然后从半导体晶片的其余部分切割半导体晶片的区域，使得第一集成电路和第二集成电路在待使用在电子系统内的管芯上。 当第一集成电路包括至少一个处理器和当第二集成电路包括至少一个处理器时，本发明可以被用于特别有利。 在这种情况下，具有第一集成电路和第二集成电路的管芯在多处理器系统内使用。 利用本发明，将电子系统的集成电路紧凑地制造在半导体晶片的两侧。

公开(公告)号：US07852808B2

公开(公告)日：2010-12-14

申请号：US10461378

申请日：2003-06-16

申请人： Weizhong Wang

发明人： Weizhong Wang

IPC分类号： H04W4/00

CPC分类号： H04W36/12 ,  H04W84/005

摘要： A mobile communication system, a radio switching method, a mobile base station and a mobile terminal in which the mobile terminal does not perform handover to a fixed base station while moving in/on a moving body to avert an adverse affect of variation of received field intensity on communication. Fixed base stations that are connected to a public telephone network are disposed along a traveling direction of a train. The train which a user who possesses a mobile terminal gets on is provided with a mobile base station capable of being connected to the fixed base stations. The mobile base station detects the mobile terminal entering into the communication area covered by the mobile base station and the train starting moving to the next station. Triggered by the two kinds of detection, the mobile base station takes over processes of handover to the fixed base station from the mobile terminal. While moving, the mobile base station performs handover to a next base station one after another. When the train approaches the next station, the mobile terminal performs handover to the fixed base station that covers the communication area around the station of arrival in behalf of the mobile base station.

摘要翻译： 一种移动通信系统，无线电切换方法，移动基站和移动终端，其中移动终端在移动体内移动时不进行到固定基站的切换，以避免接收场的变化的不利影响 通信强度。 连接到公共电话网络的固定基站沿列车的行进方向设置。 拥有移动终端的用户的列车接通的火车设置有能够连接到固定基站的移动基站。 移动基站检测移动终端进入移动基站覆盖的通信区域，并且开始移动到下一个站。 由两种检测方式触发，移动基站从移动终端接管到固定基站的切换处理。 在移动的同时，移动基站一个接一个地执行到下一个基站的切换。 当列车接近下一站时，移动终端执行到固定基站的切换，该固定基站代表移动基站覆盖到达站周围的通信区域。

公开(公告)号：US07844220B2

公开(公告)日：2010-11-30

申请号：US11297570

申请日：2005-12-08

申请人： Weizhong Wang

发明人： Weizhong Wang

IPC分类号： H04B1/00 ,  H04M1/00

CPC分类号： H04M1/6033 ,  H04M1/6066 ,  H04M1/72502 ,  H04M2203/1091 ,  H04M2250/02 ,  H04W84/10 ,  H04W88/04

摘要： Disclosed is a headset which includes a radio communication unit and control unit. The radio communication unit has 2 communication mode. The first mode is used for communication with an access point connected to a fixed network. The second mode is used for communication with a specific portable communication terminal. The communication control unit judges whether the headset can communicate with the access point. The communication control unit selects either one of said first and said second mode based on the judgment result. When the first mode is selected, the communication control unit connects the headset to the fixed network with the telephone number of the specific portable communication terminal as a telephone number of the call originating party.

摘要翻译： 公开了一种耳机，其包括无线电通信单元和控制单元。 无线电通信单元具有2个通信模式。 第一模式用于与连接到固定网络的接入点进行通信。 第二模式用于与特定便携式通信终端的通信。 通信控制单元判断耳机是否能够与接入点通信。 通信控制单元基于判断结果选择所述第一和第二模式中的任一种。 当选择第一模式时，通信控制单元将具有特定便携式通信终端的电话号码的耳机连接到固定网络，作为呼叫发起方的电话号码。

公开(公告)号：US20060121960A1

公开(公告)日：2006-06-08

申请号：US11297570

申请日：2005-12-08

申请人： Weizhong Wang

发明人： Weizhong Wang

IPC分类号： H04M1/00

CPC分类号： H04M1/6033 ,  H04M1/6066 ,  H04M1/72502 ,  H04M2203/1091 ,  H04M2250/02 ,  H04W84/10 ,  H04W88/04

摘要： Disclosed is a headset which includes a radio communication unit and control unit. The radio communication unit has 2 communication mode. The first mode is used for communication with an access point connected to a fixed network. The second mode is used for communication with a specific portable communication terminal. The communication control unit judges whether the headset can communicate with the access point. The communication control unit selects either one of said first and said second mode based on the judgment result. When the first mode is selected, the communication control unit connects the headset to the fixed network with the telephone number of the specific portable communication terminal as a telephone number of the call originating party.

摘要翻译： 公开了一种耳机，其包括无线电通信单元和控制单元。 无线电通信单元具有2个通信模式。 第一种模式用于与连接到固定网络的接入点进行通信。 第二模式用于与特定便携式通信终端的通信。 通信控制单元判断耳机是否能够与接入点通信。 通信控制单元基于判断结果选择所述第一和第二模式中的任一种。 当选择第一模式时，通信控制单元将具有特定便携式通信终端的电话号码的耳机连接到固定网络，作为呼叫始发方的电话号码。

公开(公告)号：US06856911B2

公开(公告)日：2005-02-15

申请号：US09876910

申请日：2001-06-08

申请人： Weizhong Wang ,  Long Don Pham

发明人： Weizhong Wang ,  Long Don Pham

IPC分类号： G01V1/28

CPC分类号： G01V1/28 ,  G01V2210/51 ,  G01V2210/67

摘要： A method of migration of a seismic data is disclosed. The data include a data point having an input source location, an input receiver location, and a scatter point associated therewith. The method includes determining a projected source location, and determining a projected receiver location. The seismic data point is mapped from an input travel time to a projected travel time. A pseudo-offset is determined based on the projected travel time and the data point is mapped to the pseudo-offset.

摘要翻译： 公开了一种地震数据的迁移方法。 数据包括具有输入源位置，输入接收器位置和与其相关联的散点的数据点。 该方法包括确定投影的源位置，以及确定投影的接收器位置。 地震数据点从输入行进时间映射到预计行驶时间。 基于投影行进时间确定伪偏移量，并将数据点映射到伪偏移量。