公开(公告)号：US07459682B2

公开(公告)日：2008-12-02

申请号：US11559842

申请日：2006-11-14

申请人： Wen-Hui Duan ,  Shao-Gang Hao ,  Gang Zhou ,  Jian Wu ,  Bing-Lin Gu

发明人： Wen-Hui Duan ,  Shao-Gang Hao ,  Gang Zhou ,  Jian Wu ,  Bing-Lin Gu

IPC分类号： G01N23/00

CPC分类号： H01J1/304 ,  G01Q60/16 ,  H01J2201/30434 ,  H01J2201/30488 ,  H01J2203/0296 ,  Y10S977/815 ,  Y10S977/822 ,  Y10S977/838 ,  Y10S977/849 ,  Y10S977/86 ,  Y10S977/861

摘要： An exemplary spin-polarized electron source includes a cathode, and a one-dimensional nanostructure made of a compound (e.g., group III-V) semiconductor with local polarized gap states. The one-dimensional nanostructure includes a first end portion electrically connected with the cathode and a second end portion located/directed away from the cathode. The second end portion of the one-dimensional nanostructure functions as a polarized electron emission tip and is configured (i.e., structured and arranged) for emitting a spin-polarized electron current/beam under an effect of selectably one of a magnetic field induction and a circularly polarized light beam excitation when a predetermined negative bias voltage is applied to the cathode. Furthermore, a spin-polarized scanning tunneling microscope incorporating such a spin-polarized electron source is also provided.

摘要翻译： 示例性的自旋极化电子源包括阴极和由具有局部极化间隙状态的化合物（例如III-V族）半导体制成的一维纳米结构。 一维纳米结构包括与阴极电连接的第一端部和位于/远离阴极的第二端部。 一维纳米结构的第二端部用作极化电子发射尖端，并且被配置（即，构造和布置），用于在可选择地对磁场感应和 当向阴极施加预定的负偏压时，圆偏振光束激发。 此外，还提供了包含这种自旋极化电子源的自旋极化扫描隧道显微镜。