公开(公告)号：US07459682B2

公开(公告)日：2008-12-02

申请号：US11559842

申请日：2006-11-14

申请人： Wen-Hui Duan ,  Shao-Gang Hao ,  Gang Zhou ,  Jian Wu ,  Bing-Lin Gu

发明人： Wen-Hui Duan ,  Shao-Gang Hao ,  Gang Zhou ,  Jian Wu ,  Bing-Lin Gu

IPC分类号： G01N23/00

CPC分类号： H01J1/304 ,  G01Q60/16 ,  H01J2201/30434 ,  H01J2201/30488 ,  H01J2203/0296 ,  Y10S977/815 ,  Y10S977/822 ,  Y10S977/838 ,  Y10S977/849 ,  Y10S977/86 ,  Y10S977/861

摘要： An exemplary spin-polarized electron source includes a cathode, and a one-dimensional nanostructure made of a compound (e.g., group III-V) semiconductor with local polarized gap states. The one-dimensional nanostructure includes a first end portion electrically connected with the cathode and a second end portion located/directed away from the cathode. The second end portion of the one-dimensional nanostructure functions as a polarized electron emission tip and is configured (i.e., structured and arranged) for emitting a spin-polarized electron current/beam under an effect of selectably one of a magnetic field induction and a circularly polarized light beam excitation when a predetermined negative bias voltage is applied to the cathode. Furthermore, a spin-polarized scanning tunneling microscope incorporating such a spin-polarized electron source is also provided.

摘要翻译： 示例性的自旋极化电子源包括阴极和由具有局部极化间隙状态的化合物（例如III-V族）半导体制成的一维纳米结构。 一维纳米结构包括与阴极电连接的第一端部和位于/远离阴极的第二端部。 一维纳米结构的第二端部用作极化电子发射尖端，并且被配置（即，构造和布置），用于在可选择地对磁场感应和 当向阴极施加预定的负偏压时，圆偏振光束激发。 此外，还提供了包含这种自旋极化电子源的自旋极化扫描隧道显微镜。

公开(公告)号：US09147728B2

公开(公告)日：2015-09-29

申请号：US12842195

申请日：2010-07-23

申请人： Jian Wu ,  Zheng Liu ,  Wen-Hui Duan ,  Bing-Lin Gu

发明人： Jian Wu ,  Zheng Liu ,  Wen-Hui Duan ,  Bing-Lin Gu

IPC分类号： H01L29/12 ,  H01L29/06 ,  B82Y10/00 ,  H01L29/04 ,  H01L29/15

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/045 ,  H01L29/15

摘要： The present disclosure relates to a semiconductor nanostructure. The semiconductor nanostructure includes a substrate and at least one ridge. The substrate includes a first crystal plane and a second crystal plane perpendicular to the first crystal plane. The at least one ridge extends from the first crystal plane along a crystallographic orientation of the second crystal plane. A width of cross section at a position of half the height of the at least one ridge is less than 17 nm. The semiconductor nanostructure is a patterned structure which can lead to generate a quantum confinement effect, such that the impurity scattering phenomenon is reduced.

摘要翻译： 本发明涉及半导体纳米结构。 半导体纳米结构包括基底和至少一个脊。 衬底包括垂直于第一晶体平面的第一晶体平面和第二晶体面。 所述至少一个脊从所述第一晶体平面沿着所述第二晶体平面的晶体取向延伸。 在至少一个脊的高度的一半位置处的横截面宽度小于17nm。 半导体纳米结构是可以导致产生量子限制效应的图案化结构，使得杂质散射现象减少。

公开(公告)号：US08796664B2

公开(公告)日：2014-08-05

申请号：US13685654

申请日：2012-11-26

申请人： Wen-Hui Duan ,  Yuan-Chang Li ,  Peng-Cheng Chen ,  Jian Wu ,  Bing-Lin Gu

发明人： Wen-Hui Duan ,  Yuan-Chang Li ,  Peng-Cheng Chen ,  Jian Wu ,  Bing-Lin Gu

IPC分类号： H01L29/06 ,  C01B31/04

CPC分类号： H01L29/1606 ,  B32B9/005 ,  B32B9/007 ,  B32B2255/205 ,  B32B2307/308 ,  B32B2457/00 ,  B82Y99/00 ,  H01L29/165 ,  Y10S977/734

摘要： A graphene-based composite structure is disclosed. The graphene-based composite structure includes a graphene layer, a transition metal layer, and a substrate. The graphene layer, transition metal layer, and substrate are stacked together in series to form a sandwich structure. The graphene layer and the transition metal layer are coupled by d-p orbitals hybridization. The transition metal layer and the substrate are also coupled by d-p orbitals hybridization. A method for making graphene-based composite structure is also disclosed.

摘要翻译： 公开了一种基于石墨烯的复合结构。 基于石墨烯的复合结构包括石墨烯层，过渡金属层和基底。 将石墨烯层，过渡金属层和基板串联堆叠以形成夹层结构。 石墨烯层和过渡金属层通过d-p轨道杂交耦合。 过渡金属层和底物也通过d-p轨道杂交耦合。 还公开了一种制备基于石墨烯的复合结构的方法。

公开(公告)号：US07604877B2

公开(公告)日：2009-10-20

申请号：US11432240

申请日：2006-05-10

申请人： Wen-Hui Duan ,  Zhong-Qing Wu ,  Jian Wu ,  Bing-Lin Gu

发明人： Wen-Hui Duan ,  Zhong-Qing Wu ,  Jian Wu ,  Bing-Lin Gu

IPC分类号： C30B29/30 ,  C30B29/22 ,  B32B15/04 ,  C30B30/00

CPC分类号： H01L28/55 ,  H01L21/31691

摘要： A ferroelectric film includes a plurality of ferroelectric nanodomains configured in a regularly staggered fashion. The ferroelectric film has a quasi 2-dimensional configuration and is comprised of a ferroelectric material. A method for forming a ferroelectric film is also provided. A ferroelectric film comprised of a ferroelectric material is prepared. The ferroelectric film has a quasi 2-dimensional configuration and defines a direction that is normal to the quasi 2-dimensional configuration. An electric field along the normal direction is applied to the ferroelectric film, thereby the ferroelectric film having an array of ferroelectric nanodomains configured in a regularly staggered fashion is obtained.

摘要翻译： 铁电体膜包括以规则交错的方式配置的多个铁电纳米结构域。 铁电体膜具有准二维结构，由铁电体构成。 还提供了形成铁电体膜的方法。 制备由铁电材料构成的铁电体膜。 铁电体膜具有准二维构型，并且限定了与准二维构型正交的方向。 向铁电体膜施加沿法线方向的电场，得到具有以规则交错排列的铁电纳米结构体阵列的铁电体膜。

公开(公告)号：US20070072010A1

公开(公告)日：2007-03-29

申请号：US11432240

申请日：2006-05-10

申请人： Wen-Hui Duan ,  Zhong-Qing Wu ,  Jian Wu ,  Bing-Lin Gu

发明人： Wen-Hui Duan ,  Zhong-Qing Wu ,  Jian Wu ,  Bing-Lin Gu

IPC分类号： B32B9/00 ,  B32B19/00 ,  B05D5/12 ,  B29C71/04

CPC分类号： H01L28/55 ,  H01L21/31691

摘要： A ferroelectric film includes a plurality of ferroelectric nanodomains configured in a regularly staggered fashion. The ferroelectric film has a quasi 2-dimensional configuration and is comprised of a ferroelectric material. A method for forming a ferroelectric film is also provided. A ferroelectric film comprised of a ferroelectric material is prepared. The ferroelectric film has a quasi 2-dimensional configuration and defines a direction that is normal to the quasi 2-dimensional configuration. An electric field along the normal direction is applied to the ferroelectric film, thereby the ferroelectric film having an array of ferroelectric nanodomains configured in a regularly staggered fashion is obtained.

摘要翻译： 铁电体膜包括以规则交错的方式配置的多个铁电纳米结构域。 铁电体膜具有准二维结构，由铁电体构成。 还提供了形成铁电体膜的方法。 制备由铁电材料构成的铁电体膜。 铁电体膜具有准二维构型，并且限定了与准二维构型正交的方向。 向铁电体膜施加沿法线方向的电场，得到具有以规则交错排列的铁电纳米结构体阵列的铁电体膜。