公开(公告)号：US5838020A

公开(公告)日：1998-11-17

申请号：US641418

申请日：1996-05-01

申请人： Thomas D. Hurt

发明人： Thomas D. Hurt

IPC分类号： G11B7/00 ,  G11B5/00 ,  G11B5/012 ,  G11B5/64 ,  G11B7/004 ,  G11B9/10 ,  G11B11/10 ,  G11B11/11 ,  G11B11/115 ,  G11B13/04 ,  G11B19/04 ,  G11B20/18 ,  G11B23/28 ,  G11C11/02 ,  G11C11/16 ,  G11C11/23 ,  H01J3/02 ,  H01J29/48 ,  H01J31/60 ,  H01L29/06

CPC分类号： G11B5/65 ,  G11B11/11 ,  G11B11/115 ,  G11B19/04 ,  G11B20/1883 ,  G11B23/28 ,  G11B5/00 ,  G11B5/64 ,  G11B5/653 ,  G11B5/656 ,  G11B9/10 ,  G11C11/02 ,  G11C11/23 ,  H01J3/02 ,  H01J31/60 ,  G11B13/045 ,  H01J2203/0296 ,  H01J2237/06383

摘要： A data storage device including a substrate, a data storage layer on the substrate, and a spin-polarized electron source. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, the electron having a wavelength "characteristic" of unpaired electrons in the data storage layer which cause the magnetic moment of the material, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at a second wavelength at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.

公开(公告)号：US5523572A

公开(公告)日：1996-06-04

申请号：US410760

申请日：1995-03-27

申请人： Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

发明人： Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

IPC分类号： H01J1/34 ,  H01J3/02 ,  H01J37/00

CPC分类号： H01J1/34 ,  H01J3/021 ,  H01J2201/3423 ,  H01J2203/0296

摘要： A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.

摘要翻译： 一种生产高自旋极化电子束的方法，包括以下步骤：向包括具有第一晶格常数的第一化合物半导体层和具有不同于第一晶格常数的第二晶格常数的第二化合物半导体层的半导体器件施加光能 晶格常数，所述第二半导体层与所述第一半导体层接触接触以提供应变的半导体异质结构，所述第一和第二晶格常数之间的失配量的大小限定了所述第一和第二晶格常数之间的重孔带和所述光孔带之间的能量分裂 第二半导体层，使得能量分裂大于使用中的第二半导体层中的热噪声能量; 以及在接收到光能时从第二半导体层提取高自旋极化的电子束。 一种半导体器件，用于在接收到光能时发射包括由砷化镓磷化物GaAs1-xPx形成的并具有第一晶格常数的第一化合物半导体层的高度自旋极化的电子束; 以及设置在所述第一半导体层上的第二化合物半导体层，所述第二半导体层具有与所述第一晶格常数不同的第二晶格常数和小于所述第一半导体层的厚度的厚度t。

公开(公告)号：US20110089397A1

公开(公告)日：2011-04-21

申请号：US12736270

申请日：2009-03-24

申请人： Toru Ujihara ,  Xiuguang Jin ,  Yoshikazu Takeda ,  Tsutomu Nakanishi ,  Naoto Yamamoto ,  Takashi Saka ,  Toshihiro Kato

发明人： Toru Ujihara ,  Xiuguang Jin ,  Yoshikazu Takeda ,  Tsutomu Nakanishi ,  Naoto Yamamoto ,  Takashi Saka ,  Toshihiro Kato

IPC分类号： H01L29/12

CPC分类号： G21K1/16 ,  H01J1/34 ,  H01J3/021 ,  H01J37/06 ,  H01J2201/3423 ,  H01J2203/0296 ,  H01J2237/06333 ,  H01J2237/06383 ,  H01J2237/24557 ,  H01J2237/26

摘要： To provide implement a spin-polarized electron generating device having high spin polarization and high external quantum efficiency while allowing a certain degree of freedom in selecting materials of a substrate, a buffer layer, and a strained superlattice layer.In a spin-polarized electron generating device having a substrate, a buffer layer, and a strained superlattice layer formed on the buffer layer, an intermediate layer formed of a crystal having a lattice constant greater than that of a crystal used to form the buffer layer intervenes between the substrate and the buffer layer. With this arrangement, tensile strain causes cracks to be formed in the buffer layer in a direction perpendicular to the substrate, whereby the buffer layer has mosaic-like appearance. As a result, glide dislocations in an oblique direction do not propagate to the strained superlattice layer to be grown on the buffer layer, thereby improving crystallinity of the strained superlattice layer. Accordingly, spin polarization of excited electrons and external quantum efficiency of polarized electrons improve.

摘要翻译： 为了提供具有高自旋极化和高外部量子效率的自旋极化电子发生器件，同时在选择衬底，缓冲层和应变超晶格层的材料方面具有一定的自由度。 在具有形成在缓冲层上的衬底，缓冲层和应变超晶格层的自旋极化电子发生器件中，由晶格常数大于用于形成缓冲层的晶体的晶格常数的晶体形成的中间层 介于衬底和缓冲层之间。 通过这种布置，拉伸应变使得缓冲层中的垂直于基板的方向形成裂纹，由此缓冲层具有马赛克状外观。 结果，倾斜方向的滑移位错不会传播到在缓冲层上生长的应变超晶格层，从而提高应变超晶格层的结晶度。 因此，激发电子的自旋极化和极化电子的外部量子效率提高。

公开(公告)号：US20080073554A1

公开(公告)日：2008-03-27

申请号：US11559842

申请日：2006-11-14

申请人： WEN-HUI DUAN ,  SHAO-GANG HAO ,  GANG ZHOU ,  JIAN WU ,  BING-LIN GU

发明人： WEN-HUI DUAN ,  SHAO-GANG HAO ,  GANG ZHOU ,  JIAN WU ,  BING-LIN GU

IPC分类号： H01T23/00

CPC分类号： H01J1/304 ,  G01Q60/16 ,  H01J2201/30434 ,  H01J2201/30488 ,  H01J2203/0296 ,  Y10S977/815 ,  Y10S977/822 ,  Y10S977/838 ,  Y10S977/849 ,  Y10S977/86 ,  Y10S977/861

摘要： An exemplary spin-polarized electron source includes a cathode, and a one-dimensional nanostructure made of a compound (e.g., group III-V) semiconductor with local polarized gap states. The one-dimensional nanostructure includes a first end portion electrically connected with the cathode and a second end portion located/directed away from the cathode. The second end portion of the one-dimensional nanostructure functions as a polarized electron emission tip and is configured (i.e., structured and arranged) for emitting a spin-polarized electron current/beam under an effect of selectably one of a magnetic field induction and a circularly polarized light beam excitation when a predetermined negative bias voltage is applied to the cathode. Furthermore, a spin-polarized scanning tunneling microscope incorporating such a spin-polarized electron source is also provided.

摘要翻译： 示例性的自旋极化电子源包括阴极和由具有局部极化间隙状态的化合物（例如III-V族）半导体制成的一维纳米结构。 一维纳米结构包括与阴极电连接的第一端部和位于/远离阴极的第二端部。 一维纳米结构的第二端部用作极化电子发射尖端，并且被配置（即，构造和布置），用于在可选择地对磁场感应和 当向阴极施加预定的负偏压时，圆偏振光束激发。 此外，还提供了包含这种自旋极化电子源的自旋极化扫描隧道显微镜。

公开(公告)号：US6147894A

公开(公告)日：2000-11-14

申请号：US157368

申请日：1998-09-21

申请人： Thomas D. Hurt

发明人： Thomas D. Hurt

IPC分类号： G11B7/00 ,  G11B5/00 ,  G11B5/012 ,  G11B5/64 ,  G11B7/004 ,  G11B9/10 ,  G11B11/10 ,  G11B11/11 ,  G11B11/115 ,  G11B13/04 ,  G11B19/04 ,  G11B20/18 ,  G11B23/28 ,  G11C11/02 ,  G11C11/16 ,  G11C11/23 ,  H01J3/02 ,  H01J29/48 ,  H01J31/60 ,  G11C13/00

CPC分类号： G11B5/65 ,  G11B11/11 ,  G11B11/115 ,  G11B19/04 ,  G11B20/1883 ,  G11B23/28 ,  G11B5/00 ,  G11B5/64 ,  G11B5/653 ,  G11B5/656 ,  G11B9/10 ,  G11C11/02 ,  G11C11/23 ,  H01J3/02 ,  H01J31/60 ,  G11B13/045 ,  H01J2203/0296 ,  H01J2237/06383

摘要： A data storage device including a substrate, a data storage layer on the substrate, and a spin-polarized electron source. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, the electron having a wavelength "characteristic" of unpaired electrons in the data storage layer which cause the magnetic moment of the material, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at a second wavelength at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.

摘要翻译： 一种数据存储装置，包括基板，基板上的数据存储层和自旋极化电子源。 数据存储层包括固定数量的磁性材料的原子层，为数据存储层提供垂直于数据存储层表面的磁各向异性。 在数据存储层中创建数据磁场。 数据磁场在对应于第一数据值的第一方向或对应于第二数据值的第二方向上被极化。 通过提供具有电子磁场的自旋极化电子，数据存储在数据存储层中，该电子磁场具有与第一和第二数据值中的一个数据值相对应的极化方向，电子具有不成对电子的波长“特性” 数据存储层，其引起材料的磁矩，并将自旋极化电子引导到数据磁场，以将电子磁场的极化方向赋予数据磁场。 通过在数据磁场处引导第二波长的自旋极化电子并通过数据磁场检测自旋极化电子的偏转或吸引，从数据存储层读取数据。 或者，通过将自旋极化电子指向数据磁场，从数据存储层读取数据，使得磁介质产生二次电子，然后检测二次电子的某些特性。

公开(公告)号：US5723871A

公开(公告)日：1998-03-03

申请号：US214319

申请日：1994-03-17

申请人： Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

发明人： Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

IPC分类号： H01J1/34 ,  H01J3/02 ,  H01L29/201 ,  H01L29/161

CPC分类号： H01J1/34 ,  H01J3/021 ,  H01J2201/3423 ,  H01J2203/0296

摘要： A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.

公开(公告)号：US20130168577A1

公开(公告)日：2013-07-04

申请号：US13715662

申请日：2012-12-14

申请人： CONSIGLIO NAZIONALE DELLE RICERCHE

发明人： Vincenzo GRILLO ,  Lorenzo MARRUCCI ,  Ebrahim KARIMI ,  Enrico SANTAMATO

IPC分类号： G21K1/16

CPC分类号： H01J37/26 ,  G21K1/16 ,  H01J3/02 ,  H01J37/06 ,  H01J2203/0296 ,  H01J2237/06383

摘要： An apparatus for spin polarizing a particle beam is adapted to process an input particle beam in such a way as to generate an at least partially spin polarized output particle beam. A vortex beam generator for imparting orbital angular momentum to the input particle beam. An electromagnetic field generator generates a transverse magnetic field, space-variant and symmetric with respect to the axis of the input particle beam, in such a way as to change the spin of the particles and attach thereto different values of orbital angular momentum in dependence on their input spin values. A beam component separating group spatially separates the particles in dependence on their orbital angular momentum values, in such a way as to obtain the at least partially spin polarized output particle beam.

摘要翻译： 用于自旋极化粒子束的装置适于处理输入粒子束，以便产生至少部分旋转偏振的输出粒子束。 用于将轨道角动量传递给输入粒子束的涡流束发生器。 电磁场发生器以相对于输入粒子束的轴线的空间变化和对称的方式产生横向磁场，以便改变粒子的旋转，并依附于其上附加不同的轨道角动量值 他们的输入自旋值。 光束分量分组基于其轨道角动量值空间上分离颗粒，以获得至少部分自旋极化输出粒子束。

公开(公告)号：US08344354B2

公开(公告)日：2013-01-01

申请号：US12736270

申请日：2009-03-24

申请人： Toru Ujihara ,  Xiuguang Jin ,  Yoshikazu Takeda ,  Tsutomu Nakanishi ,  Naoto Yamamoto ,  Takashi Saka ,  Toshihiro Kato

发明人： Toru Ujihara ,  Xiuguang Jin ,  Yoshikazu Takeda ,  Tsutomu Nakanishi ,  Naoto Yamamoto ,  Takashi Saka ,  Toshihiro Kato

IPC分类号： H01L31/0304

CPC分类号： G21K1/16 ,  H01J1/34 ,  H01J3/021 ,  H01J37/06 ,  H01J2201/3423 ,  H01J2203/0296 ,  H01J2237/06333 ,  H01J2237/06383 ,  H01J2237/24557 ,  H01J2237/26

摘要： A spin-polarized electron generating device includes a substrate, a buffer layer, a strained superlattice layer formed on the buffer layer, and an intermediate layer formed of a crystal having a lattice constant greater than a lattice constant of a crystal of the buffer layer, the intermediate layer intervening between the substrate and the buffer layer. The buffer layer includes cracks formed in a direction perpendicular to the substrate by tensile strain.

摘要翻译： 自旋极化电子产生装置包括衬底，缓冲层，形成在缓冲层上的应变超晶格层，以及由晶格常数大于缓冲层晶体的晶格常数的晶体形成的中间层， 介于衬底和缓冲层之间的中间层。 缓冲层包括通过拉伸应变在垂直于基板的方向上形成的裂纹。

公开(公告)号：US5446687A

公开(公告)日：1995-08-29

申请号：US188828

申请日：1994-01-31

申请人： Thomas D. Hurt ,  Scott A. Halpine

发明人： Thomas D. Hurt ,  Scott A. Halpine

IPC分类号： G11B5/00 ,  G11B5/64 ,  G11B9/10 ,  G11B11/11 ,  G11B11/115 ,  G11B13/04 ,  G11B19/04 ,  G11B20/18 ,  G11B23/28 ,  G11C11/02 ,  G11C11/23 ,  H01J3/02 ,  G11C13/04

CPC分类号： G11B5/65 ,  G11B11/11 ,  G11B11/115 ,  G11B19/04 ,  G11B20/1883 ,  G11B23/28 ,  G11B5/00 ,  G11B5/64 ,  G11B5/653 ,  G11B5/656 ,  G11B9/10 ,  G11C11/02 ,  G11C11/23 ,  H01J3/02 ,  G11B13/045 ,  H01J2203/0296 ,  H01J2237/06383

摘要： A data storage medium comprising a substrate and a data storage layer formed on the substrate. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.

摘要翻译： 一种数据存储介质，包括形成在基板上的基板和数据存储层。 数据存储层包括固定数量的磁性材料的原子层，为数据存储层提供垂直于数据存储层表面的磁各向异性。 在数据存储层中创建数据磁场。 数据磁场在对应于第一数据值的第一方向或对应于第二数据值的第二方向上被极化。 通过提供具有电子磁场的自旋极化电子将数据存储在数据存储层中，该电子磁场具有对应于第一和第二数据值之一的极化方向，并将数据磁场的自旋极化电子引导到 将电子磁场的极化方向赋予数据磁场。 通过在数据磁场处引导自旋极化电子并通过数据磁场检测自旋极化电子的偏转或吸引，从数据存储层读取数据。 或者，通过将自旋极化电子指向数据磁场，从数据存储层读取数据，使得磁介质产生二次电子，然后检测二次电子的某些特性。

公开(公告)号：US4835438A

公开(公告)日：1989-05-30

申请号：US125135

申请日：1987-11-25

申请人： Robert Baptist ,  Ariel Brenac ,  Gerard Chauvet ,  Robert Meyer ,  Francis Muller

发明人： Robert Baptist ,  Ariel Brenac ,  Gerard Chauvet ,  Robert Meyer ,  Francis Muller

IPC分类号： G21K1/16 ,  H01J1/304 ,  H01J3/02 ,  H01J37/073

CPC分类号： H01J3/022 ,  G21K1/16 ,  H01J1/3042 ,  H01J37/073 ,  H01J2203/0296

摘要： Spin polarized electron source using an emissive micropoint cathode. At least one portion of each micropoint, including the top of the latter, is ferromagnetic, so that the electrons emitted by the cathode are spin polarized in a given direction, when the portion is subject to a magnetic field parallel to the given direction.

摘要翻译： 使用发射微点阴极的旋转极化电子源。 每个微点的至少一部分，包括后者的顶部，是铁磁性的，使得阴极发射的电子在给定方向上被自旋极化，当该部分受到平行于给定方向的磁场时。