Low temperature method for minimizing copper hillock defects
    2.
    发明申请
    Low temperature method for minimizing copper hillock defects 有权
    用于最小化铜小丘缺陷的低温方法

    公开(公告)号:US20060252258A1

    公开(公告)日:2006-11-09

    申请号:US11122393

    申请日:2005-05-05

    IPC分类号: H01L21/4763 H01L21/44

    摘要: A method of fabricating a copper interconnect on a substrate is disclosed in which the interconnect and substrate are subjected to a low temperature anneal subsequent to polarization of the interconnect and prior to deposition of an overlying dielectric layer. The low temperature anneal inhibits the formation of hillocks in the copper material during subsequent high temperature deposition of the dielectric layer. Hillocks can protrude through passivation layer, thus causing shorts within the connections of the semiconductor devices formed on the substrate. In one example, the interconnect and substrate are annealed at a temperature of about 200 ° C. for a period of about 180 seconds in a forming gas environment comprising hydrogen (5 parts per hundred) and nitrogen (95 parts per hundred).

    摘要翻译: 公开了一种在衬底上制造铜互连的方法,其中互连和衬底在互连的极化之后并且在沉积上覆的电介质层之前经受低温退火。 低温退火在随后的介电层的高温沉积期间抑制铜材料中的小丘的形成。 小丘可以突出穿过钝化层,从而在形成在衬底上的半导体器件的连接之内引起短路。 在一个实例中,在包含氢气(5份/百份)和氮气(95份/百份)的形成气体环境中,在大约200℃的温度下将互连和衬底退火约180秒的时间。

    Low temperature method for minimizing copper hillock defects
    3.
    发明授权
    Low temperature method for minimizing copper hillock defects 有权
    用于最小化铜小丘缺陷的低温方法

    公开(公告)号:US07851358B2

    公开(公告)日:2010-12-14

    申请号:US11122393

    申请日:2005-05-05

    IPC分类号: H01L21/44

    摘要: A method of fabricating a copper interconnect on a substrate is disclosed in which the interconnect and substrate are subjected to a low temperature anneal subsequent to polarization of the interconnect and prior to deposition of an overlying dielectric layer. The low temperature anneal inhibits the formation of hillocks in the copper material during subsequent high temperature deposition of the dielectric layer. Hillocks can protrude through passivation layer, thus causing shorts within the connections of the semiconductor devices formed on the substrate. In one example, the interconnect and substrate are annealed at a temperature of about 200° C. for a period of about 180 seconds in a forming gas environment comprising hydrogen (5 parts per hundred) and nitrogen (95 parts per hundred).

    摘要翻译: 公开了一种在衬底上制造铜互连的方法,其中互连和衬底在互连的极化之后并且在沉积上覆的电介质层之前经受低温退火。 低温退火在随后的介电层的高温沉积期间抑制铜材料中的小丘的形成。 小丘可以突出穿过钝化层,从而在形成在衬底上的半导体器件的连接之内引起短路。 在一个实例中,在包含氢气(5份/百份)和氮气(95份/百份)的形成气体环境中,在大约200℃的温度下将互连和衬底退火约180秒的时间。

    DIRECTIONAL TRANSMISSION MECHANISM, DIRECTIONAL SPROCKET APPARATUS AND PEDAL DEVICE

    公开(公告)号:US20170247083A1

    公开(公告)日:2017-08-31

    申请号:US15597924

    申请日:2017-05-17

    申请人: Jun Wu

    发明人: Jun Wu

    摘要: A directional transmission mechanism, a directional sprocket apparatus using the directional transmission mechanism, and a pedal device using the directional sprocket apparatus are disclosed. The directional transmission mechanism includes a driving shaft, an output shaft, a co-rotating wheel, a reverse-rotating wheel, and a switching mechanism. The co-rotating wheel set drives the output shaft to rotate in a direction that is the same as that of the driving shaft. The reverse-rotating wheel set drives the output shaft to rotate in a direction opposite to that of the driving shaft. The switching mechanism switches the driving shaft to drive the co-rotating wheel set or drive the reverse-rotating wheel set to rotate, so as to enable the output shaft to rotate directionally. The co-rotating wheel set is connected with the driving shaft and the output shaft, and the reverse-rotating wheel set is connected with the driving shaft and the output shaft.

    Suggesting and refining user input based on original user input
    9.
    发明授权
    Suggesting and refining user input based on original user input 有权
    根据原始用户输入建议和改进用户输入

    公开(公告)号:US09020924B2

    公开(公告)日:2015-04-28

    申请号:US13615518

    申请日:2012-09-13

    IPC分类号: G06F17/30

    摘要: Systems and methods to generate modified/refined user inputs based on the original user input, such as a search query, are disclosed. The method may be implemented for Roman-based and/or non-Roman based language such as Chinese. The method may generally include receiving an original user input and identifying core terms therein, determining potential alternative inputs by replacing core term(s) in the original input with another term according to a similarity matrix and/or substituting a word sequence in the original input with another word sequence according to an expansion/contraction table where one word sequence is a substring of the other, computing likelihood of each potential alternative input, and selecting most likely alternative inputs according to a predetermined criteria, e.g., likelihood of the alternative input being at least that of the original input. A cache containing pre-computed original user inputs and corresponding alternative inputs may be provided.

    摘要翻译: 公开了基于原始用户输入(例如搜索查询)生成修改/改进的用户输入的系统和方法。 该方法可以用于基于罗马语和/或非罗马语言的中文。 该方法通常可以包括接收原始用户输入并识别其中的核心术语,通过根据相似度矩阵替换原始输入中的核心项与另一项来确定潜在替代输入和/或替换原始输入中的单词序列 根据扩展/收缩表的另一个字序列,其中一个单词序列是另一个单词序列是另一个单词的子串,计算每个潜在替代输入的可能性,并根据预定标准选择最可能的替代输入,例如替代输入的可能性为 至少是原来的输入。 可以提供包含预先计算的原始用户输入和相应的备选输入的缓存。

    Power factor correction circuit of an electronic ballast
    10.
    发明授权
    Power factor correction circuit of an electronic ballast 有权
    电子镇流器的功率因数校正电路

    公开(公告)号:US08836230B2

    公开(公告)日:2014-09-16

    申请号:US13521236

    申请日:2010-12-29

    申请人: Jun Wu

    发明人: Jun Wu

    CPC分类号: H05B37/00 H02M1/42 H05B41/28

    摘要: This invention relates to a power factor correction circuit of an electronic ballast. The electronic ballast includes a rectification circuit, a first capacitive element and an inverter. The power factor correction circuit comprises a unidirectional element, an inductive element and a second capacitive element. The unidirectional element is connected in series with the inductive element, and the second capacitive element is connected in parallel with the unidirectional element and the inductive element. A junction of the unidirectional element and the second capacitive element is coupled to a first output terminal of the rectification circuit, a junction of the inductive element and the second capacitive element is coupled to an input terminal of the inverter, and the first capacitive element is coupled between a second output terminal of the rectification circuit and a junction of the unidirectional element and the inductive element.

    摘要翻译: 本发明涉及电子镇流器的功率因数校正电路。 电子镇流器包括整流电路,第一电容元件和逆变器。 功率因数校正电路包括单向元件,电感元件和第二电容元件。 单向元件与电感元件串联连接,第二电容元件与单向元件和电感元件并联连接。 单向元件和第二电容元件的结点耦合到整流电路的第一输出端,​​电感元件和第二电容元件的结点耦合到反相器的输入端,第一电容元件是 耦合在整流电路的第二输出端子和单向元件与感应元件的接点之间。