摘要:
The present invention provides a method of manufacturing a semiconductor device. The method includes the steps of forming a first interlayer insulating film over a silicon substrate; forming a first conductive film on the first interlayer insulating film; forming a first ferroelectric film, which is crystallized, on the first conductive film; annealing the first ferroelectric film; after the annealing, forming, on the first ferroelectric film, a second ferroelectric film made of an amorphous material or a microcrystalline material; forming a second conductive film on the second ferroelectric film; and forming a capacitor by patterning the first and second conductive films and the first and second ferroelectric films.
摘要:
The present invention provides a method of manufacturing a semiconductor device. The method includes the steps of forming a first interlayer insulating film over a silicon substrate; forming a first conductive film on the first interlayer insulating film; forming a first ferroelectric film, which is crystallized, on the first conductive film; annealing the first ferroelectric film; after the annealing, forming, on the first ferroelectric film, a second ferroelectric film made of an amorphous material or a microcrystalline material; forming a second conductive film on the second ferroelectric film; and forming a capacitor by patterning the first and second conductive films and the first and second ferroelectric films.
摘要:
Disclosed is a microorganism control agent containing not less than 1% by weight but less than 10% by weight of N,N′-hexamethylenebis(4-carbamoyl-1-decylpyridinium bromide), not less than 35% by weight but less than 60% by weight of at least one alcohol having 2 or 3 carbon atoms, water and an acid.
摘要:
An element includes a first resin layer and a second resin layer disposed between a first glass lens substrate and a second glass lens substrate, a boundary surface between the first resin layer and the second resin layer having a diffraction grating shape including a plurality of inclined surfaces and wall surfaces. The second resin layer is composed of a fluororesin in which fine metal oxide particles are dispersed. Since a refractive index distribution easily occurs in this material during curing by application of ultraviolet light, by applying ultraviolet light substantially perpendicular to the inclined surfaces of the diffraction grating shape, a refractive index distribution is formed in the thickness direction perpendicularly to the inclined surfaces.
摘要:
A vehicle headlamp includes a lamp unit having a bulb attaching portion into which a bulb is inserted and attached, an outer housing configured to engage with the lamp unit at a location behind the bulb attaching portion, an inner housing disposed inside the outer housing such that a clearance is provided in a radial direction between the outer housing and the inner housing and such that, relative to the outer housing, the inner housing is movable in an axial direction and is rotatable about an axis extending in the axial direction, and a spring disposed between the outer housing and the inner housing to bias the inner housing toward the bulb in the axial direction. When the outer housing is engaged with the lamp unit, the spring biases the inner housing such that a flange of the bulb is pressed against the bulb attaching portion.
摘要:
A lighting device for a vehicle is provided. The lighting device includes a projection lens disposed on an optical axis and having a focal line, a first light emitting device disposed on a rear side of the focal line, a reflector which reflects light toward the focal line; a shade which shields a part of the light; a second light emitting device disposed on a rear side of the first light emitting device; and a light guide. The light guide includes an incident portion into which light emitted from the second light emitting device is introduced, a light guiding portion which guides the light, a shielding portion which forms a part of the shade, and an emitting portion coupled to the shielding portion and disposed on the focal line or in a vicinity of the focal line. The emitting portion emits the light guided by the light guiding portion.
摘要:
A first electrode film containing TiAlN and a main dielectric film containing tantalum oxide are formed over a semiconductor substrate. Anneal is performed in the state that the first electrode film and the main dielectric film are formed, to react aluminum (Al) in the first electrode film with oxygen (O) in the main dielectric film and form a subsidiary dielectric film containing aluminum oxide at an interface between the first electrode film and the main dielectric film. A second electrode film is formed facing the first electrode film via the main dielectric film and the subsidiary dielectric film.
摘要:
A method of manufacturing a semiconductor device comprising forming a sacrificial layer including one or more conductive film on a semiconductor substrate, forming a cavity used as a template of electroplating in the sacrificial layer, growing a metal film on a surface of the cavity by the electroplating using the conductive layer as a seed layer so that a cylindrical or convex electrode can be formed, and removing the sacrificial layer so that the electrode can be formed.
摘要:
A diffraction optical element comprises a substrate, a diffraction grating formed on the substrate with a material with low ultraviolet resistance and an ultraviolet screening means arranged on the substrate at a position closer to the incident light receiving side of the optical element relative to the diffraction grating. The ultraviolet screening means comprises a dielectric multilayer film and is formed on the other side of the substrate than the side carrying the diffraction grating. Alternatively, the ultraviolet screening means may be provided as a separate member from a diffraction optical element and arranged at a position closer to the incident light receiving side of the diffraction optical element in an optical system.