Voltage controlled oscillator utilizing threshold voltage control of
silicon on insulator MOSFETS
    1.
    发明授权
    Voltage controlled oscillator utilizing threshold voltage control of silicon on insulator MOSFETS 失效
    利用硅绝缘体MOSFETs的阈值电压控制的压控振荡器

    公开(公告)号:US6133799A

    公开(公告)日:2000-10-17

    申请号:US257228

    申请日:1999-02-25

    摘要: A voltage controlled ring oscillator (VCRO) that can operate at low voltage and provide a variable periodic output. A plurality of transistors form a ring oscillator and a selected transistor in the ring oscillator has a body which can float with respect to ground potential. The selected transistor has a threshold voltage which is controllable by a voltage applied to the transistor body. A control input is coupled to the transistor body such that the body of the transistor can be charged by the control input. Charging the body alters the threshold voltage of the transistor and thereby controls the oscillation frequency of the oscillator.

    摘要翻译: 电压控制环形振荡器(VCRO),可在低电压下工作并提供可变的周期性输出。 多个晶体管形成环形振荡器,环形振荡器中选定的晶体管具有能够相对于地电位浮动的主体。 所选择的晶体管具有可由施加到晶体管体的电压控制的阈值电压。 控制输入​​耦合到晶体管本体,使得晶体管的主体可以由控制输入充电。 对体内充电改变晶体管的阈值电压,从而控制振荡器的振荡频率。