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    Production of high-purity polycrystalline silicon rod for semiconductor applications
    5.
    发明授权
    Production of high-purity polycrystalline silicon rod for semiconductor applications 失效
    生产用于半导体应用的高纯度多晶硅棒

    公开(公告)号：US5478396A

    公开(公告)日：1995-12-26

    申请号：US296964

    申请日：1994-08-26

    申请人： David W. Keck ,  Kenichi Nagai ,  Yoshifumi Yatsurugi ,  Hiroshi Morihara ,  Junji Izawa

    发明人： David W. Keck ,  Kenichi Nagai ,  Yoshifumi Yatsurugi ,  Hiroshi Morihara ,  Junji Izawa

    IPC分类号： C01B33/035 ,  C23C16/44 ,  C23C16/455 ,  C30B29/66 ,  C23C16/00 ,  C01B33/02

    CPC分类号： C23C16/4401 ,  C01B33/035 ,  C23C16/4418 ,  C23C16/45589 ,  C23C16/45593

    摘要： Disclosed are a processes and reactors for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications by the deposition of silicon from a gas containing a silane compound. The equipment includes a reactor vessel which encloses a powder catcher having a cooled surface. Also within the vessel is a cylindrical water jacket which defines multiple reaction chambers. The silicon powder generated in this process adheres to the coolest surfaces, which are those of the powder catcher, and is thereby collected. Little of the powder adheres to the walls of the reaction chambers. In some embodiments, a fan can be provided to increase gas circulation.

    摘要翻译： 公开了一种用于通过从含有硅烷化合物的气体沉积硅来快速生产用于半导体应用的大直径，高纯度多晶硅棒的工艺和反应器。 该设备包括一个包围具有冷却表面的粉末捕集器的反应器容器。 在容器内也是限定多个反应室的圆筒形水套。 在该方法中产生的硅粉粘附到最冷的表面，即粉末捕集器的表面，从而收集。 很少的粉末粘附在反应室的壁上。 在一些实施例中，可以提供风扇以增加气体循环。

    Production of high-purity polycrystalline silicon rod for semiconductor applications
    7.
    发明授权
    Production of high-purity polycrystalline silicon rod for semiconductor applications 失效
    生产用于半导体应用的高纯度多晶硅棒

    公开(公告)号：US5382419A

    公开(公告)日：1995-01-17

    申请号：US953480

    申请日：1992-09-28

    申请人： Kenichi Nagai ,  Yosifumi Yatsurugi ,  Hiroshi Morihara ,  Junji Izawa

    发明人： Kenichi Nagai ,  Yosifumi Yatsurugi ,  Hiroshi Morihara ,  Junji Izawa

    IPC分类号： C01B33/035 ,  C23C16/44 ,  C01B33/02

    CPC分类号： C23C16/4418 ,  C01B33/035

    摘要： Disclosed is a process for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications, while maintaining the purity of a highly refined monosilane gas inside the reactor. The equipment includes a reactor vessel which encloses powder catchers consisting of cylindrical water jackets. Also within the vessel is a cylindrical water jacket which concentrically surrounds the powder catchers and which defines multiple reaction chambers. Control is effected in such a way that the temperature distribution in different sections inside the reactor is as follows in the ascending order: the powder catcher walls, the walls of the water jacket which defines the reaction chambers, and the lower wall of the vessel cover. Part of the monosilane gas is ejected horizontally from a plurality of gas nozzles, is agitated by a descending gas flow generated around the powder catchers, and ascends inside the reaction chambers at a uniform concentration, thereby causing polycrystalline silicon rods to be grown around silicon starter filaments in a short time. The silicon powder generated in this process adheres to the coolest wall surfaces, which are those of the powder catchers, and is thereby collected. Little of the powder adheres to the walls of the reaction chambers or the wall of the reactor ceiling section. This effect can be further enhanced by the provision of a fan to increase gas circulation.

    摘要翻译： 公开了一种用于快速生产用于半导体应用的大直径，高纯度多晶硅棒的方法，同时保持反应器内的高度精制的单硅烷气体的纯度。 该设备包括一个包围由圆柱形水套组成的粉末捕集器的反应堆容器。 容器内也是圆形水套，其同心地围绕粉末捕集器并限定多个反应室。 以这样的方式进行控制，使得反应器内不同部分的温度分布按升序排列如下：粉末捕集器壁，限定反应室的水套的壁和容器盖的下壁 。 甲硅烷气体的一部分从多个气体喷嘴水平喷出，被粉末捕集器周围产生的下降气流搅动，并以均匀的浓度上升到反应室内，从而使多晶硅棒生长在硅起子周围 细丝在短时间内。 在该过程中产生的硅粉粘附到最冷的壁表面，这是粉末捕集器的壁表面，从而被收集。 一小部分粉末粘附在反应室的壁面或反应器顶部的壁上。 通过设置风扇以增加气体循环，可以进一步提高该效果。