摘要:
A resistive heating element is formed by depositing an amorphous silicon film on selected portions of a substrate and heating the deposited amorphous silicon film so that it undergoes solid phase epitaxy to form a (111) textured polycrystalline silicon film. The method is particularly useful for forming electro-thermal transducers for thermal ink jet printheads.
摘要:
A thermal ink jet printhead is improved by a specific heating element structure and method of manufacture. The heating elements each have a resistive layer, a high temperature deposited plasma or pyrolytic silicon nitride thereover of predetermined thickness to electrically isolate a subsequently formed cavitational stress protecting layer of tantalum thereon. The pyrolytic silicon nitride permits wet chemical or dry plasma etching delineation of the tantalum without deleterious impact on the silicon nitride, while the delineated tantalum can serve as mask for the wet etch delineation of the silicon nitride. Because of the high deposition temperatures, the aluminum electrodes are patterned and passivated last. Such a construction lowers the manufacturing cost and concurrently provides a more durable printhead.
摘要:
The present disclosure provides constructs that comprise (a) a TNF-related apoptosis-inducing ligand (TRAIL) trimer comprising three consecutive extracellular TRAIL domains fused together in a head-to-tail configuration; (b) an epitope binding agent, and (c) optionally one or more additional components, wherein the epitope binding agent competitively inhibits binding of P4-TR3 or HN1-TR3 to cell surface human mesothelin. Constructs of the present disclosure induce apoptosis in cells expressing human mesothelin and a death receptor (DR4 or DR5) on the cell's surface.
摘要:
The new heater element design has a pit layer which protects the overglaze passivation layer, PSG step region, portions of the Ta layer and dielectric isolation layer and junctions or regions susceptible to the cavitational pressures. Further, the inner walls of the pit layer define the effective heater area and the dopant lines define the actual heater area. In alternative embodiments, the dopant lines define the actual and effective heater areas, and an inner wall and a dopant line define the actual and effective heater areas. Further, when the new heater element designs are incorporated into printheads having full pit channel geometry and open pit channel geometry, the operating lifetime of the printhead is extended because the added protection of the pit layer prevents: 1) passivation damage and cavitational damages of the heater elements; and 2) degradation of heater robustness, hot spot formations and heater failures well into the 109 pulse range. The printhead incorporating the new heater element design can be incorporated into drop-on-demand printing systems of a carriage type or a full width type.
摘要:
A thermal ink jet printhead includes a switched power supply for the intermediate voltage predriver sections. The power supply is switched by a MOSFET connected between an intermediate point of a voltage divider and ground. By switching the power supply, the predriver sections are turned off, unnecessary power consumption and overheating the printhead are avoided.
摘要:
An improved ink jet printhead is disclosed of the type having a plurality of parallel ink flow channels which terminate with an ink droplet emitting nozzle, a heating element with a cavitational protective layer thereover located in each channel, and MOS electronic circuitry monolithically integrated within the printhead for applying electrical pulses to the heating elements. The pulsed heating elements produce bubbles momentarily on the protective layer of the heating elements which expel ink droplets from the nozzles. The improvement is obtained by providing multi-layer ionic passivation of the MOS electronic circuitry which is exposable to the ink. This is accomplished through the deposition of a multi-layered, thin film insulative coating thereon consisting of a first layer of doped or undoped silicon dioxide having a thickness of 200 .ANG. to 2 .mu.m followed by a second layer of plasma nitride having a thickness of 1000 .ANG. to 3 .mu.m. The silicon nitride is etched from the protective layers of the heating elements and electrical contact pads for external connection to electrical power so that the first layer of silicon oxide is exposed, followed by etching of the silicon oxide to remove it from the protective layer and contact pads. Thus, the MOS circuitry is protected from mobile ions in the ink while the cost effective fabrication of a printhead is maintained. In an alternate embodiment, the multi-layered ionic passivation comprises three thin film layers comprising polyimide interfacing with the ink, followed by silicon nitride, and doped or undoped silicon dioxide directly interfacing with the metallization.
摘要:
A "roofshooter" pagewidth printhead for use in a thermal ink jet printing device is fabricated by forming a plurality of subunits, each being produced by bonding a heater substrate having an architecture including an array of heater elements and an etched ink feed slot to a secondary substrate having a series of spaced feed hole openings to form a combined substrate in which said series of spaced feed hole openings communicates with said ink feed slot, and dicing said combined substrates through said ink feed slot to form a subunit. An array of butted subunits having a length equal to one pagewidth is formed by butting one of said subunits against an adjacent subunit. The array of butted subunits is bonded to a pagewidth support substrate. The secondary substrate provides an integral support structure for maintaining the alignment of the heater plate which, if diced through the feed hole without the secondary substrate, would separate into individual pieces, thereby complicating the alignment and assembly process.
摘要:
An improved thermal ink jet printhead and method of fabrication thereof is disclosed of the type formed by the mating and bonding of first and second substrates. The first substrate is silicon with {100} crystal plane surfaces and has anisotropically etched in one surface thereof a linear series of separate through recesses and a plurality of parallel, elongated ink channels grooves. The second substrate has a plurality of heating elements and addressing electrodes patterned on one surface thereof. The through recesses serve as a segmented ink reservoir with each segment having an ink inlet, and the elongated ink channel grooves having one end adjacent the segmented reservoir and the opposite end open to serve as ink droplet emitting nozzles. Each segment of the segmented reservoir is isolated from each other by dividing walls. The dividing walls strengthen the printhead, and the separate through recesses reduce the effects of angular misalignment between mask and first substrate crystal planes. In the preferred embodiment, a thick film insulative layer is sandwiched between the first and second substrates and patterned to form recesses therein to provide the means for placing the segmented reservoir into communication with the ink channel grooves. To produce a multicolor printing printhead, the thick film layer is patterned to form a linear series of recesses, each substantially equal in length to an associated one of the reservoir segments, so that each reservoir segment may have a different colored ink supplied thereto that cannot mix with the ink of the other reservoir segments.
摘要:
Three dimensional silicon structures are fabricated from (100) silicon wafers by a single side, multiple step ODE etching process. All etching masks are formed one on top of the other prior to the initiation of etching, with the coarsest mask formed last and used first. Once the coarse anisotropic etching is completed, the coarse mask is removed and the finer anisotropic etching is done. The preferred embodiment is described using a thermal ink jet channel plate as the three dimensional structure, where coarse etching step provides the reservoir and the fine etching step provides the ink channels.
摘要:
A method for separating chips formed on a silicon substrate is provided which uses a combination of reactive ion etching techniques combined with orientation etching to yield integrated chips having edges which can be more precisely butted together to form large area arrays.