公开(公告)号：US4594605A

公开(公告)日：1986-06-10

申请号：US489303

申请日：1983-04-28

申请人： William M. Kramer

发明人： William M. Kramer

IPC分类号： H01J9/233 ,  H01J29/45 ,  H01L31/0216 ,  H01J31/00 ,  H01L31/00

CPC分类号： H01L31/02161 ,  H01J29/455

摘要： An imaging device such as a silicon vidicon has a wafer of single crystal semiconductor material having an input sensing region and a charge storage region. A potential barrier is included within the input sensing region for controlling blooming. A passivation region is also included within the input sensing region to stabilize the atomic energy level along a first surface of the wafer. An anti-reflection layer of zinc sulfide and an anti-reflection layer of magnesium fluoride or Cryolite are sequentially deposited on the first surface of the wafer. The two anti-reflection layers form an anti-reflection region which enhances the quantum efficiency of the device in the wavelength range of 400 to 500 nanometers. Each of the layers has an optical thickness substantially equal to a quarter of the wavelength of light incident on the device. A method of forming the anti-reflection region is also disclosed.

摘要翻译： 诸如硅摄像机的成像装置具有具有输入感测区域和电荷存储区域的单晶半导体材料晶片。 输入感测区域内包含一个势垒，用于控制起霜。 钝化区域也包括在输入感测区域内以稳定沿着晶片的第一表面的原子能级。 在晶片的第一表面上依次沉积硫化锌的防反射层和氟化镁或碳黑的抗反射层。 两个防反射层形成了抗反射区域，其增强了器件在400至500纳米的波长范围内的量子效率。 每个层的光学厚度基本上等于入射到设备上的光的波长的四分之一。 还公开了形成抗反射区域的方法。

公开(公告)号：US4604519A

公开(公告)日：1986-08-05

申请号：US494288

申请日：1983-05-13

申请人： James A. Zollman ,  William M. Kramer ,  James L. Rhoads

发明人： James A. Zollman ,  William M. Kramer ,  James L. Rhoads

IPC分类号： H01J29/02 ,  H01J29/44 ,  H01L27/148 ,  H01J40/14

CPC分类号： H01J29/44 ,  H01J29/026 ,  H01L27/1464 ,  H01L27/14831

摘要： An intensified charge coupled image sensor comprises an image intensifier tube including an evacuated envelope having therein a photoemissive cathode, a charge coupled device spaced from said cathode, and a frame member for supporting the charge coupled device. The charge coupled device has a first surface and a second surface with a conductive boundary on the first surface. The frame member has a coefficient of expansion closely matching that of the charge coupled device and a first and second surface with a conductive pattern formed on one of the surfaces. The conductive boundary of the CCD and the conductive pattern of the frame member are in register and bonded together by a braze material to form a unitized structure of superior strength. The method of forming the conductive boundary and the conductive pattern is described as is the brazing method.

摘要翻译： 强化的电荷耦合图像传感器包括图像增强管，其包括其中具有光发射阴极的抽真空的外壳，与所述阴极间隔开的电荷耦合器件和用于支撑电荷耦合器件的框架部件。 电荷耦合器件具有在第一表面上具有导电边界的第一表面和第二表面。 框架构件的膨胀系数与电荷耦合器件的膨胀系数密切相关，第一和第二表面具有在其中一个表面上形成的导电图案。 CCD的导电边界和框架构件的导电图案通过钎焊材料对准并结合在一起，以形成具有优异强度的单元结构。 形成导电边界和导电图案的方法被描述为钎焊方法。

公开(公告)号：US4689873A

公开(公告)日：1987-09-01

申请号：US769742

申请日：1985-08-27

申请人： William M. Kramer

发明人： William M. Kramer

IPC分类号： H01J29/45 ,  H01L31/0216 ,  H01L27/14 ,  H01L31/18

CPC分类号： H01J29/455 ,  H01L31/02161 ,  Y10S148/172

摘要： An imaging device such as a silicon vidicon has a wafer of single crystal semiconductor material having an input sensing region and a charge storage region. A potential barrier is included within the input sensing region for controlling blooming. A passivation region is also included within the input sensing region to stabilize the atomic energy level along a first surface of the wafer. An anti-reflection layer of zinc sulfide and an anti-reflection layer of magnesium fluoride or Cryolite are sequentially deposited on the first surface of the wafer. The two anti-reflection layers form an anti-reflection region which enhances the quantum efficiency of the device in the wavelength range of 400 to 500 nanometers. Each of the layers has an optical thickness substantially equal to a quarter of the wavelength of light incident on the device. A method of forming the anti-reflection region is also disclosed.

摘要翻译： 诸如硅摄像机的成像装置具有具有输入感测区域和电荷存储区域的单晶半导体材料晶片。 输入感测区域内包含一个势垒，用于控制起霜。 钝化区域也包括在输入感测区域内以稳定沿着晶片的第一表面的原子能级。 在晶片的第一表面上依次沉积硫化锌的防反射层和氟化镁或碳黑的抗反射层。 两个防反射层形成了抗反射区域，其增强了器件在400至500纳米的波长范围内的量子效率。 每个层的光学厚度基本上等于入射到设备上的光的波长的四分之一。 还公开了形成抗反射区域的方法。

公开(公告)号：US4228446A

公开(公告)日：1980-10-14

申请号：US37832

申请日：1979-05-10

申请人： William M. Kramer

发明人： William M. Kramer

IPC分类号： H01J29/45 ,  H01L27/146 ,  H01L31/0216 ,  H01L27/14

CPC分类号： H01J29/455 ,  H01L27/14654 ,  H01L31/02161

摘要： An imaging device such as silicon vidicon has a wafer of single crystal semiconductor material having an input sensing region and a charge storage region. A potential barrier is included for controlling the blooming within the sensing region, and a passivation layer is provided for stabilizing the blooming characteristics. A coating, preferably zirconium oxide, is deposited on the passivation layer to combine with the passivation layer to form an anti-reflection region for enhancing the quantum efficiency of the device. The anti-reflection region has an optical thickness substantially equal to an odd multiple of a quarter of a wavelength of light incident on the device.

摘要翻译： 诸如硅摄像机的成像装置具有具有输入感测区域和电荷存储区域的单晶半导体材料晶片。 包括用于控制感测区域内的起霜的势垒，并且提供钝化层以稳定起霜特性。 在钝化层上沉积涂层，优选氧化锆，以与钝化层组合形成用于增强器件的量子效率的抗反射区域。 抗反射区域的光学厚度基本上等于入射到器件上的光的波长的四分之一的奇数倍。