Pulsed dielectric barrier discharge
    1.
    发明申请
    Pulsed dielectric barrier discharge 有权
    脉冲电介质阻挡放电

    公开(公告)号:US20100079073A1

    公开(公告)日:2010-04-01

    申请号:US12586597

    申请日:2009-09-24

    IPC分类号: H05H1/24

    摘要: A method of generating a glow discharge plasma involves providing a pair of electrodes spaced apart by an electrode gap, and having a dielectric disposed in the electrode gap between the electrodes; placing the electrodes within an environment, wherein the electrode gap can be provided with a gas or gas mixture containing carbon at a specified pressure; and applying a rapid rise time voltage pulse across the electrodes to cause an extreme overvoltage condition, wherein the rapid rise time is less than a plasma generation time so that the extreme overvoltage condition occurs prior to current flow across the electrode gap. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

    摘要翻译: 产生辉光放电等离子体的方法包括提供一对由电极间隔开的电极,并且在电极之间的电极间隙中设置电介质; 将电极放置在环境中,其中电极间隙可以设置有在特定压力下含有碳的气体或气体混合物; 以及跨越电极施加快速上升时间电压脉冲以引起极端的过电压状态,其中快速上升时间小于等离子体产生时间,使得极限过电压状态发生在电流跨越电极间隙的电流之前。 该摘要不被认为是限制性的,因为其他实施例可能偏离本摘要中描述的特征。

    Pulsed dielectric barrier discharge
    2.
    发明授权
    Pulsed dielectric barrier discharge 有权
    脉冲电介质阻挡放电

    公开(公告)号:US08084947B2

    公开(公告)日:2011-12-27

    申请号:US12586597

    申请日:2009-09-24

    IPC分类号: H05B31/26

    摘要: A method of generating a glow discharge plasma involves providing a pair of electrodes spaced apart by an electrode gap, and having a dielectric disposed in the electrode gap between the electrodes; placing the electrodes within an environment, wherein the electrode gap can be provided with a gas or gas mixture containing carbon at a specified pressure; and applying a rapid rise time voltage pulse across the electrodes to cause an extreme overvoltage condition, wherein the rapid rise time is less than a plasma generation time so that the extreme overvoltage condition occurs prior to current flow across the electrode gap. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

    摘要翻译: 产生辉光放电等离子体的方法包括提供一对由电极间隔开的电极,并且在电极之间的电极间隙中设置电介质; 将电极放置在环境中,其中电极间隙可以设置有在特定压力下含有碳的气体或气体混合物; 以及跨越电极施加快速上升时间电压脉冲以引起极端的过电压状态,其中快速上升时间小于等离子体产生时间,使得极限过电压状态发生在电流跨越电极间隙的电流之前。 该摘要不被认为是限制性的,因为其他实施例可能偏离本摘要中描述的特征。

    Pulsed dielectric barrier discharge
    3.
    发明授权
    Pulsed dielectric barrier discharge 有权
    脉冲电介质阻挡放电

    公开(公告)号:US07615931B2

    公开(公告)日:2009-11-10

    申请号:US11120153

    申请日:2005-05-02

    IPC分类号: H05B31/26

    摘要: A dielectric barrier plasma discharge device consistent with certain embodiments of the present invention has a pair of electrodes spaced apart by an electrode gap. A dielectric is disposed between the electrodes. The electrode gap is provided with a gas at a specified pressure. A rapid rise time voltage pulse generator produces a voltage pulse across the electrodes to cause an extreme overvoltage condition, wherein the rapid rise time is less than a plasma generation time so that the extreme overvoltage condition occurs prior to current flow across the electrode gap. Due to the high voltages and high current densities, the product yields an extremely high instantaneous power density. This extreme overvoltage condition is also believed to lead to production of shock waves and runaway free electrons. The resulting plasma can be utilized to carry out many potential tasks including, but not limited to etching, deposition, and sterilization. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

    摘要翻译: 与本发明的某些实施例一致的电介质阻挡等离子体放电装置具有由电极间隙隔开的一对电极。 在电极之间设置电介质。 电极间隙设有规定压力的气体。 快速上升时间电压脉冲发生器在电极之间产生电压脉冲以产生极端的过电压状态,其中快速上升时间小于等离子体产生时间,使得极限过电压状态发生在跨过电极间隙的电流流动之前。 由于高电压和高电流密度,产品产生极高的瞬时功率密度。 这种极端的过电压条件也被认为会导致产生冲击波和失控的自由电子。 所得到的等离子体可用于执行许多潜在任务,包括但不限于蚀刻,沉积和灭菌。 该摘要不被认为是限制性的,因为其他实施例可能偏离本摘要中描述的特征。

    Pulsed dielectric barrier discharge
    4.
    发明授权
    Pulsed dielectric barrier discharge 有权
    脉冲电介质阻挡放电

    公开(公告)号:US08344627B1

    公开(公告)日:2013-01-01

    申请号:US13329565

    申请日:2011-12-19

    IPC分类号: H05B31/26

    摘要: A method of generating a glow discharge plasma involves providing a pair of electrodes spaced apart by an electrode gap, and having a dielectric disposed in the electrode gap between the electrodes; placing the electrodes within an environment, wherein the electrode gap can be provided with a gas or gas mixture containing carbon at a specified pressure; and applying a rapid rise time voltage pulse across the electrodes to cause an extreme overvoltage condition, wherein the rapid rise time is less than a plasma generation time so that the extreme overvoltage condition occurs prior to current flow across the electrode gap. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

    摘要翻译: 产生辉光放电等离子体的方法包括提供一对由电极间隔开的电极,并且在电极之间的电极间隙中设置电介质; 将电极放置在环境中,其中电极间隙可以设置有在特定压力下含有碳的气体或气体混合物; 以及跨越电极施加快速上升时间电压脉冲以引起极端的过电压状态,其中快速上升时间小于等离子体产生时间,使得极限过电压状态发生在电流跨越电极间隙的电流之前。 该摘要不被认为是限制性的,因为其他实施例可能偏离本摘要中描述的特征。

    Semiconductor structure with coincident lattice interlayer
    5.
    发明授权
    Semiconductor structure with coincident lattice interlayer 有权
    具有重合晶格中间层的半导体结构

    公开(公告)号:US08263976B2

    公开(公告)日:2012-09-11

    申请号:US13104541

    申请日:2011-05-10

    IPC分类号: H01L29/72

    摘要: A semiconductor structure consistent with certain implementations has a crystalline substrate oriented with a {111} plane surface that is within 10 degrees of surface normal. An epitaxially grown electrically insulating interlayer overlays the crystalline substrate and establishes a coincident lattice that mates with the surface symmetry of the {111} plane surface. An atomically stable two dimensional crystalline film resides on the epitaxial insulating layer with a coincident lattice match to the insulating interlayer. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

    摘要翻译: 与某些实施方案一致的半导体结构具有以{111}平面表面取向的晶体衬底,该表面在表面法线的10度以内。 外延生长的电绝缘中间层覆盖晶体衬底,并建立与{111}平面表面的表面对称性配合的重合晶格。 原子稳定的二维结晶膜位于外延绝缘层上,与绝缘中间层具有一致的晶格匹配。 该摘要不被认为是限制性的,因为其他实施例可能偏离本摘要中描述的特征。

    Nano-carbon hybrid structures
    6.
    发明授权
    Nano-carbon hybrid structures 有权
    纳碳混合结构

    公开(公告)号:US08308994B1

    公开(公告)日:2012-11-13

    申请号:US13295595

    申请日:2011-11-14

    IPC分类号: H01B3/24

    摘要: A stable colloidal suspension of carbon-based nanomaterials in a solvent has a stable colloidal suspension of nanodiamond particles having at least one additional carbon-based electromagnetic radiation attenuating nanomaterial nanomaterials disbursed and agitated into the solvent to produce said suspension. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

    摘要翻译: 碳基纳米材料在溶剂中的稳定的胶体悬浮液具有稳定的纳米金刚石颗粒的胶体悬浮液,其具有至少一种额外的碳基电磁辐射,其减弱了纳米材料纳米材料,并将其搅拌成溶剂以产生所述悬浮液。 该摘要不被认为是限制性的,因为其他实施例可能偏离本摘要中描述的特征。

    Semiconductor structure with coincident lattice interlayer
    7.
    发明授权
    Semiconductor structure with coincident lattice interlayer 有权
    具有重合晶格中间层的半导体结构

    公开(公告)号:US07960259B2

    公开(公告)日:2011-06-14

    申请号:US12283368

    申请日:2008-09-11

    IPC分类号: H01L29/72

    摘要: A semiconductor structure consistent with certain implementations has a crystalline substrate oriented with a {111} plane surface that is within 10 degrees of surface normal. An epitaxially grown electrically insulating interlayer overlays the crystalline substrate and establishes a coincident lattice that mates with the surface symmetry of the {111} plane surface. An atomically stable two dimensional crystalline film resides on the epitaxial insulating layer with a coincident lattice match to the insulating interlayer. Methods of fabrication are disclosed. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

    摘要翻译: 与某些实施方案一致的半导体结构具有以{111}平面表面取向的晶体衬底,该表面在表面法线的10度以内。 外延生长的电绝缘中间层覆盖晶体衬底,并建立与{111}平面表面的表面对称性配合的重合晶格。 原子稳定的二维结晶膜位于外延绝缘层上,与绝缘中间层具有一致的晶格匹配。 公开了制造方法。 该摘要不被认为是限制性的,因为其他实施例可能偏离本摘要中描述的特征。

    Nano-carbon hybrid structures
    8.
    发明申请
    Nano-carbon hybrid structures 有权
    纳碳混合结构

    公开(公告)号:US20100140562A1

    公开(公告)日:2010-06-10

    申请号:US12592354

    申请日:2009-11-24

    IPC分类号: H01B1/24 H01B1/04

    摘要: A stable colloidal suspension of carbon-based nanomaterials in a solvent has a stable colloidal suspension of nanodiamond particles having at least one additional carbon nanomaterials disbursed and agitated into the solvent to produce said suspension. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

    摘要翻译: 碳基纳米材料在溶剂中的稳定的胶体悬浮液具有稳定的纳米金刚石颗粒的胶体悬浮液,其具有至少一个另外的碳纳米材料,并且被溶解并搅拌成溶剂以产生所述悬浮液。 该摘要不被认为是限制性的,因为其他实施例可能偏离本摘要中描述的特征。

    Semiconductor structure with coincident lattice interlayer
    9.
    发明申请
    Semiconductor structure with coincident lattice interlayer 有权
    具有重合晶格中间层的半导体结构

    公开(公告)号:US20090079040A1

    公开(公告)日:2009-03-26

    申请号:US12283368

    申请日:2008-09-11

    IPC分类号: H01L23/62 H01L21/31

    摘要: A semiconductor structure consistent with certain implementations has a crystalline substrate oriented with a {111} plane surface that is within 10 degrees of surface normal. An epitaxially grown electrically insulating interlayer overlays the crystalline substrate and establishes a coincident lattice that mates with the surface symmetry of the {111} plane surface. An atomically stable two dimensional crystalline film resides on the epitaxial insulating layer with a coincident lattice match to the insulating interlayer. Methods of fabrication are disclosed. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

    摘要翻译: 与某些实施方案一致的半导体结构具有以{111}平面表面取向的晶体衬底,该表面在表面法线的10度以内。 外延生长的电绝缘中间层覆盖晶体衬底,并建立与{111}平面表面的表面对称性配合的重合晶格。 原子稳定的二维结晶膜位于外延绝缘层上,与绝缘中间层具有一致的晶格匹配。 公开了制造方法。 该摘要不被认为是限制性的,因为其他实施例可能偏离本摘要中描述的特征。

    Polymer nanocomposites with improved resistance to ionizing radiation
    10.
    发明授权
    Polymer nanocomposites with improved resistance to ionizing radiation 有权
    具有改进的电离辐射抗性的聚合物纳米复合材料

    公开(公告)号:US08475879B1

    公开(公告)日:2013-07-02

    申请号:US12942251

    申请日:2010-11-09

    IPC分类号: B05D3/02

    CPC分类号: B82Y30/00 B64G1/54

    摘要: Polymer nanocomposites with improved resistance to high energy ionizing radiation. Certain embodiments involve methods for providing a nanocomposite material with resistance to high energy ionizing radiation using nanodiamond, zinc oxide and mixtures of these nanoparticles with other nanoparticles dispersed within the matrix. Other embodiments relate to methods of delivering and dispersing the nanoparticles through the material or a surface layer. Other embodiments include methods of forming chemical bonds between the nanoparticles and the material. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

    摘要翻译: 具有改善的抗高电离电离辐射的聚合物纳米复合材料。 某些实施方案涉及使用纳米金刚石,氧化锌以及这些纳米颗粒与分散在基质内的其他纳米颗粒的混合物来提供对高能电离辐射具有抗性的纳米复合材料的方法。 其它实施方案涉及通过材料或表面层递送和分散纳米颗粒的方法。 其它实施方案包括在纳米颗粒和材料之间形成化学键的方法。 该摘要不被认为是限制性的,因为其他实施例可能偏离本摘要中描述的特征。