LPP EUV light source
    1.
    发明申请
    LPP EUV light source 失效
    LPP EUV光源

    公开(公告)号:US20050205811A1

    公开(公告)日:2005-09-22

    申请号:US10979919

    申请日:2004-11-01

    摘要: An apparatus and method is described for effectively and efficiently providing plasma irradiation laser light pulses in an LPP EUV light source which may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with an initial target irradiation pulse to form an EUV generating plasma having an emission region emitting in-band EUV light; a laser plasma irradiation pulse generating mechanism irradiating the plasma with a plasma irradiation pulse after the initial target irradiation pulse so as to compress emission material in the plasma toward the emission region of the plasma. The plasma irradiation pulse may comprise a laser pulse having a wavelength that is sufficiently longer than a wavelength of the initial target irradiation pulse to have an associated lower critical density resulting in absorption occurring within the plasma in a region of the plasma defined by the wavelength of the plasma irradiation pulse sufficiently separated from an initial target irradiation site to achieve compression of the emission material, and the may compress the emission region. The laser plasma irradiation pulse may produce an aerial mass density in the ablating cloud of the plasma sufficient to confine the favorably emitting plasma for increased conversion efficiency. The deposition region for the plasma irradiation pulse may be is removed enough from the initial target surface so as to insure compression of the favorably emitting plasma. A high conversion efficiency laser produced plasma extreme ultraviolet (“EUV”) light source may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with a target irradiation pulse to form an EUV generating plasma emitting in-band EUV light; a plasma tamper substantially surrounding the plasma to constrain the expansion of the plasma.

    摘要翻译: 描述了一种用于在LPP EUV光源中有效且有效地提供等离子体照射激光脉冲的装置和方法,其可以包括用初始目标照射脉冲照射等离子体引发目标的激光初始靶照射脉冲发生机构以形成产生EUV的等离子体 具有发射带内EUV光的发射区域; 激光等离子体照射脉冲发生机构在初始目标照射脉冲之后用等离子体照射脉冲照射等离子体,以将等离子体中的发射材料压缩到等离子体的发射区域。 等离子体照射脉冲可以包括具有足够长于初始靶照射脉冲的波长的波长的激光脉冲,以具有相关联的较低的临界密度,从而在由等离子体的波长定义的等离子体的区域内的等离子体内发生吸收 等离子体照射脉冲从初始目标照射位置充分分离,以实现发射材料的压缩,并且可以压缩发射区域。 激光等离子体照射脉冲可以在等离子体的消融云中产生足够的空气质量密度以限制有利的发射等离子体以提高转换效率。 可以从初始目标表面去除等离子体照射脉冲的沉积区域,以确保有利地发射等离子体的压缩。 高转换效率的激光产生的等离子体极紫外(“EUV”)光源可以包括激光初始靶照射脉冲发生机构,用目标照射脉冲照射等离子体引发目标,以形成产生EUV的发射等离子体的带内EUV光; 等离子体篡改基本上围绕等离子体以约束等离子体的膨胀。

    Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
    2.
    发明申请
    Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source 有权
    用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法

    公开(公告)号:US20050269529A1

    公开(公告)日:2005-12-08

    申请号:US11174442

    申请日:2005-06-29

    IPC分类号: G03F7/20 G01J1/00

    摘要: Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV metrology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.

    摘要翻译: 公开了用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法。 在一个方面,提供了一种EUV计量监测器,其可以具有加热器以将内部多层过滤镜加热到足以从反射镜去除沉积的碎屑的温度。 在另一方面,公开了一种用于从收集器反射镜上的不同区域处具有不同碎屑沉积速率的EUV光源收集镜去除等离子体产生的碎屑的装置。 在特定方面,EUV收集器镜系统可以包括氢源以与Li碎片结合以在收集器表面上产生LiH; 以及从收集器表面溅射LiH的溅射系统。 在另一方面,公开了一种用于从具有受控等离子体蚀刻速率的EUV光源收集镜的表面蚀刻碎片的装置。

    Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
    3.
    发明申请
    Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source 有权
    用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法

    公开(公告)号:US20070187627A1

    公开(公告)日:2007-08-16

    申请号:US11705954

    申请日:2007-02-13

    IPC分类号: G01J3/10

    摘要: Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV metrology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.

    摘要翻译: 公开了用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法。 在一个方面,提供了一种EUV计量监测器,其可以具有加热器以将内部多层过滤镜加热到足以从反射镜去除沉积的碎屑的温度。 在另一方面,公开了一种用于从收集器反射镜上的不同区域处具有不同碎屑沉积速率的EUV光源收集镜去除等离子体产生的碎屑的装置。 在特定方面,EUV收集器镜系统可以包括氢源以与Li碎片结合以在收集器表面上产生LiH; 以及从收集器表面溅射LiH的溅射系统。 在另一方面,公开了一种用于从具有受控等离子体蚀刻速率的EUV光源收集镜的表面蚀刻碎片的装置。

    Laser produced plasma EUV light source
    4.
    发明申请
    Laser produced plasma EUV light source 有权
    激光产生等离子体EUV光源

    公开(公告)号:US20060219957A1

    公开(公告)日:2006-10-05

    申请号:US11358992

    申请日:2006-02-21

    IPC分类号: G01J3/10 H05G2/00 A61N5/06

    摘要: An EUV light source is disclosed that may include a laser source, e.g. CO2 laser, a plasma chamber, and a beam delivery system for passing a laser beam from the laser source into the plasma chamber. Embodiments are disclosed which may include one or more of the following; a bypass line may be provided to establish fluid communication between the plasma chamber and the auxiliary chamber, a focusing optic, e.g. mirror, for focusing the laser beam to a focal spot in the plasma chamber, a steering optic for steering the laser beam focal spot in the plasma chamber, and an optical arrangement for adjusting focal power.

    摘要翻译: 公开了一种EUV光源,其可以包括例如激光源。 CO 2激光器,等离子体室和用于将来自激光源的激光束传递到等离子体室中的光束传送系统。 公开了可以包括以下中的一个或多个的实施例; 可以提供旁路管线以建立等离子体室和辅助室之间的流体连通,聚焦光学器件例如。 用于将激光束聚焦到等离子体室中的焦点的反射镜,用于转向等离子体室中的激光束焦斑的转向光学元件,以及用于调整焦度的光学装置。

    SYSTEMS FOR PROTECTING INTERNAL COMPONENTS OF AN EUV LIGHT SOURCE FROM PLASMA-GENERATED DEBRIS
    5.
    发明申请
    SYSTEMS FOR PROTECTING INTERNAL COMPONENTS OF AN EUV LIGHT SOURCE FROM PLASMA-GENERATED DEBRIS 有权
    用于保护来自等离子体生物反应器的EUV光源的内部组分的系统

    公开(公告)号:US20060192151A1

    公开(公告)日:2006-08-31

    申请号:US11067099

    申请日:2005-02-25

    IPC分类号: G01J1/00

    摘要: Systems and methods are disclosed for protecting an EUV light source plasma production chamber optical element surface from debris generated by plasma formation. In one aspect of an embodiment of the present invention, a shield is disclosed which comprises at least one hollow tube positioned between the optical element and a plasma formation site. The tube is oriented to capture debris while allowing light to pass through the tube's lumen via reflection at relatively small angles of grazing incidence. In another aspect of an embodiment of the present invention, a shield is disclosed which is heated to a temperature sufficient to remove one or more species of debris material that has deposited on the shield. In yet another aspect of an embodiment of the present invention, a system is disclosed which a shield is moved from a light source plasma chamber to a cleaning chamber where the shield is cleaned.

    摘要翻译: 公开了用于保护EUV光源等离子体生产室光学元件表面免受等离子体形成产生的碎片的系统和方法。 在本发明的实施例的一个方面,公开了一种屏蔽件,其包括位于光学元件和等离子体形成部位之间的至少一个中空管。 管被定向以捕获碎片,同时允许光以相对较小的掠入射角度的反射通过管的内腔。 在本发明的一个实施例的另一方面,公开了一种屏蔽件,其被加热到足以去除沉积在屏蔽上的一种或多种碎屑材料的温度。 在本发明的一个实施例的另一方面,公开了一种系统,其将屏蔽件从光源等离子体室移动到清洁室,其中屏蔽件被清洁。

    Systems for protecting internal components of an EUV light source from plasma-generated debris
    6.
    发明申请
    Systems for protecting internal components of an EUV light source from plasma-generated debris 失效
    用于保护EUV光源的内部部件免受等离子体产生的碎片的系统

    公开(公告)号:US20070029512A1

    公开(公告)日:2007-02-08

    申请号:US11512821

    申请日:2006-08-30

    IPC分类号: G01J3/10

    摘要: Systems and methods are disclosed for protecting an EUV light source plasma production chamber optical element surface from debris generated by plasma formation. In one aspect of an embodiment of the present invention, a shield is disclosed which comprises at least one hollow tube positioned between the optical element and a plasma formation site. The tube is oriented to capture debris while allowing light to pass through the tube's lumen via reflection at relatively small angles of grazing incidence. In another aspect of an embodiment of the present invention, a shield is disclosed which is heated to a temperature sufficient to remove one or more species of debris material that has deposited on the shield. In yet another aspect of an embodiment of the present invention, a system is disclosed which a shield is moved from a light source plasma chamber to a cleaning chamber where the shield is cleaned.

    摘要翻译: 公开了用于保护EUV光源等离子体生产室光学元件表面免受等离子体形成产生的碎片的系统和方法。 在本发明的实施例的一个方面,公开了一种屏蔽件,其包括位于光学元件和等离子体形成部位之间的至少一个中空管。 管被定向以捕获碎片,同时允许光以相对较小的掠入射角度的反射通过管的内腔。 在本发明的一个实施例的另一方面,公开了一种屏蔽件,其被加热到足以去除沉积在屏蔽上的一种或多种碎屑材料的温度。 在本发明的一个实施例的另一方面,公开了一种系统,其将屏蔽件从光源等离子体室移动到清洁室,其中屏蔽件被清洁。

    Laser produced plasma EUV light source
    7.
    发明授权
    Laser produced plasma EUV light source 有权
    激光产生等离子体EUV光源

    公开(公告)号:US07598509B2

    公开(公告)日:2009-10-06

    申请号:US11358992

    申请日:2006-02-21

    IPC分类号: G01J3/10

    摘要: An EUV light source is disclosed that may include a laser source, e.g. CO2 laser, a plasma chamber, and a beam delivery system for passing a laser beam from the laser source into the plasma chamber. Embodiments are disclosed which may include one or more of the following; a bypass line may be provided to establish fluid communication between the plasma chamber and the auxiliary chamber, a focusing optic, e.g. mirror, for focusing the laser beam to a focal spot in the plasma chamber, a steering optic for steering the laser beam focal spot in the plasma chamber, and an optical arrangement for adjusting focal power.

    摘要翻译: 公开了一种EUV光源,其可以包括例如激光源。 CO2激光器,等离子体室和用于将激光束从激光源传递到等离子体室中的光束传送系统。 公开了可以包括以下中的一个或多个的实施例; 可以提供旁路管线以建立等离子体室和辅助室之间的流体连通,聚焦光学器件例如。 用于将激光束聚焦到等离子体室中的焦点的反射镜,用于转向等离子体室中的激光束焦斑的转向光学元件,以及用于调整焦度的光学装置。

    EUV light source
    8.
    发明申请
    EUV light source 失效
    EUV光源

    公开(公告)号:US20070102653A1

    公开(公告)日:2007-05-10

    申请号:US11323397

    申请日:2005-12-29

    IPC分类号: G21K5/04

    CPC分类号: H05G2/003 H05G2/006

    摘要: An EUV light source and method of operating same is disclosed which may comprise: an EUV plasma production chamber comprising a chamber wall comprising an exit opening for the passage of produced EUV light focused to a focus point; a first EUV exit sleeve comprising a terminal end comprising an opening facing the exit opening; a first exit sleeve chamber housing the first exit sleeve and having an EUV light exit opening; a gas supply mechanism supplying gas under a pressure higher than the pressure within the plasma production chamber to the first exit sleeve chamber. The first exit sleeve may be tapered toward the terminal end opening, and may, e.g., be conical in shape comprising a narrowed end at the terminal end.

    摘要翻译: 公开了一种EUV光源及其操作方法,其可以包括:EUV等离子体生成室,其包括室壁,该室壁包括用于使产生的EUV光聚焦到聚焦点的通过的出口; 第一EUV出口套筒,其包括终端,所述终端包括面向所述出口的开口; 第一出口套筒室,其容纳所述第一出口套筒并具有EUV光出口; 气体供给机构,其在高于等离子体生成室内的压力的压力下向第一出口套筒室供给气体。 第一出口套筒可以朝向终端开口渐缩,并且可以例如是在终端处包括窄端的圆锥形形状。

    Laser produced plasma euv light source
    9.
    发明申请
    Laser produced plasma euv light source 审中-公开
    激光产生等离子euv光源

    公开(公告)号:US20100024980A1

    公开(公告)日:2010-02-04

    申请号:US12587258

    申请日:2009-10-05

    IPC分类号: C23F1/08

    摘要: An EUV light source is disclosed that may include a laser source, e.g. CO2 laser, a plasma chamber, and a beam delivery system for passing a laser beam from the laser source into the plasma chamber. Embodiments are disclosed which may include one or more of the following; a bypass line may be provided to establish fluid communication between the plasma chamber and the auxiliary chamber, a focusing optic, e.g. mirror, for focusing the laser beam to a focal spot in the plasma chamber, a steering optic for steering the laser beam focal spot in the plasma chamber, and an optical arrangement for adjusting focal power.

    摘要翻译: 公开了一种EUV光源,其可以包括例如激光源。 CO2激光器,等离子体室和用于将激光束从激光源传递到等离子体室中的光束传送系统。 公开了可以包括以下中的一个或多个的实施例; 可以提供旁路管线以建立等离子体室和辅助室之间的流体连通,聚焦光学器件例如。 用于将激光束聚焦到等离子体室中的焦点的反射镜,用于转向等离子体室中的激光束焦斑的转向光学元件,以及用于调整焦度的光学装置。