公开(公告)号：US11785769B2

公开(公告)日：2023-10-10

申请号：US17857034

申请日：2022-07-03

Applicant: Winbond Electronics Corp.

Inventor： Hsin-Huang Shen ,  Yu-Shu Cheng ,  Yao-Ting Tsai

IPC: H01L29/66 ,  H10B41/30 ,  H01L29/06 ,  H01L29/423 ,  H01L29/788 ,  H01L21/762 ,  H01L21/28 ,  H01L29/78 ,  H10B41/42 ,  H01L21/3213

CPC classification number: H10B41/30 ,  H01L21/76224 ,  H01L29/0653 ,  H01L29/40114 ,  H01L29/42324 ,  H01L29/66545 ,  H01L29/66598 ,  H01L29/66825 ,  H01L29/7833 ,  H01L29/7883 ,  H10B41/42 ,  H01L21/3213

Abstract: A manufacturing method of semiconductor device is provided. In the manufacturing method, a tunneling dielectric layer, floating gates on the tunneling dielectric layer, an ONO layer on the floating gates, and control gates on the ONO layer are formed. During the formation of the floating gates and the control gates, reactive-ion etching (R.I.E.) is not used at all, and thus damage to the floating and control gates from high-density plasma is prevented, such as charge trap in the floating gates may be significantly reduced to improve the reliability of data storage.

公开(公告)号：US20210183874A1

公开(公告)日：2021-06-17

申请号：US16713020

申请日：2019-12-13

Applicant: Winbond Electronics Corp.

Inventor： Hsin-Huang Shen ,  Yu-Shu Cheng ,  Yao-Ting Tsai

IPC: H01L27/11521 ,  H01L27/11531 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L29/788 ,  H01L21/762 ,  H01L21/28 ,  H01L29/66

Abstract: A semiconductor device and a manufacturing method of the same are provided. The semiconductor device includes a substrate, a plurality of floating gates, a tunneling dielectric layer, a plurality of control gates, and an ONO layer. The floating gates are located on the substrate, and the tunneling dielectric layer is located between the substrate and each of the floating gates. The control gates are located on the floating gates, and the ONO layer is located on two sidewalls of each of the control gates and between each of the control gates and each of the floating gates.

公开(公告)号：US20220336481A1

公开(公告)日：2022-10-20

申请号：US17857034

申请日：2022-07-03

Applicant: Winbond Electronics Corp.

Inventor： Hsin-Huang Shen ,  Yu-Shu Cheng ,  Yao-Ting Tsai

IPC: H01L27/11521 ,  H01L27/11531 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/788 ,  H01L21/762 ,  H01L21/28 ,  H01L29/78

Abstract: A manufacturing method of semiconductor device is provided. In the manufacturing method, a tunneling dielectric layer, floating gates on the tunneling dielectric layer, an ONO layer on the floating gates, and control gates on the ONO layer are formed. During the formation of the floating gates and the control gates, reactive-ion etching (R.I.E.) is not used at all, and thus damage to the floating and control gates from high-density plasma is prevented, such as charge trap in the floating gates may be significantly reduced to improve the reliability of data storage.

公开(公告)号：US11424254B2

公开(公告)日：2022-08-23

申请号：US16713020

申请日：2019-12-13

Applicant: Winbond Electronics Corp.

Inventor： Hsin-Huang Shen ,  Yu-Shu Cheng ,  Yao-Ting Tsai

IPC: H01L29/423 ,  H01L29/66 ,  H01L27/11521 ,  H01L27/11531 ,  H01L29/06 ,  H01L29/788 ,  H01L21/762 ,  H01L21/28 ,  H01L29/78 ,  H01L21/3213

Abstract: A semiconductor device and a manufacturing method of the same are provided. The semiconductor device includes a substrate, a plurality of floating gates, a tunneling dielectric layer, a plurality of control gates, and an ONO layer. The floating gates are located on the substrate, and the tunneling dielectric layer is located between the substrate and each of the floating gates. The control gates are located on the floating gates, and the ONO layer is located on two sidewalls of each of the control gates and between each of the control gates and each of the floating gates.