公开(公告)号：US07848061B2

公开(公告)日：2010-12-07

申请号：US11375875

申请日：2006-03-14

申请人： Wipul Jayasekara ,  Vladimir Nikitin

发明人： Wipul Jayasekara ,  Vladimir Nikitin

IPC分类号： G11B5/127

CPC分类号： G11B5/398 ,  G11B5/3935

摘要： A current perpendicular to plane (CPP) magnetoresistive sensor having a free layer that is magnetically coupled with a magnetic shield, thereby providing the free layer with a large effective flux guide. Sensor performance is improved by virtually eliminating demagnetization fields at the back edge of the sensor. The free layer can be magnetically connected with the shield by a magnetic coupling layer or shunt structure that is disposed between the free layer and the shield behind the capping layer.

摘要翻译： 垂直于平面（CPP）磁阻传感器的电流具有与磁屏蔽磁耦合的自由层，从而为自由层提供大的有效通量引导。 通过几乎消除传感器后边缘处的去磁场来提高传感器性能。 自由层可以通过设置在覆盖层后面的自由层和屏蔽层之间的磁耦合层或分流结构与屏蔽体磁连接。

公开(公告)号：US20070188939A1

公开(公告)日：2007-08-16

申请号：US11352491

申请日：2006-02-10

申请人： Robert Beach ,  Wipul Jayasekara ,  Vladimir Nikitin

发明人： Robert Beach ,  Wipul Jayasekara ,  Vladimir Nikitin

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3912 ,  G11B5/40

摘要： In a CPP MR device such as a tunnel magnetoresistive (TMR) device, shoulders that have a magnetic moment that is matched to the magnetic moments of the free layer extend between the free layer and the S2 shield to provide an electrical path from one shoulder, through the shield, to the other shoulder for dissipating edge charges. Thus, a CPP MR device may include a seed stack, a pinned stack on the seed stack, and a tunnel barrier on the pinned stack. A free stack may be on the tunnel barrier, and the free stack can include a free sublayer separated from a magnetic shield and a path for dissipating edge charges in the free stack through the magnetic shield.

摘要翻译： 在诸如隧道磁阻（TMR）器件的CPP MR器件中，具有与自由层的磁矩匹配的磁矩的肩部在自由层和S 2屏蔽之间延伸以提供从一个肩部 ，通过屏蔽，到另一肩，消散边缘电荷。 因此，CPP MR装置可以包括种子堆叠，种子堆叠上的钉扎堆叠以及钉扎堆叠上的隧道势垒。 自由堆叠可以在隧道屏障上，并且自由堆叠可以包括与磁屏蔽分离的自由子层和用于通过磁屏蔽消散自由堆叠中的边缘电荷的路径。

公开(公告)号：US20070217080A1

公开(公告)日：2007-09-20

申请号：US11375875

申请日：2006-03-14

申请人： Wipul Jayasekara ,  Vladimir Nikitin

发明人： Wipul Jayasekara ,  Vladimir Nikitin

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/398 ,  G11B5/3935

摘要： A current perpendicular to plane (CPP) magnetoresistive sensor having a free layer that is magnetically coupled with a magnetic shield, thereby providing the free layer with a large effective flux guide. Sensor performance is improved by virtually eliminating demagnetization fields at the back edge of the sensor. The free layer can be magnetically connected with the shield by a magnetic coupling layer or shunt structure that is disposed between the free layer and the shield behind the capping layer.

摘要翻译： 垂直于平面（CPP）磁阻传感器的电流具有与磁屏蔽磁耦合的自由层，从而为自由层提供大的有效通量引导。 通过几乎消除传感器后边缘处的去磁场来提高传感器性能。 自由层可以通过设置在覆盖层后面的自由层和屏蔽层之间的磁耦合层或分流结构与屏蔽体磁连接。

公开(公告)号：US20050237666A1

公开(公告)日：2005-10-27

申请号：US10831834

申请日：2004-04-26

申请人： Wen-Chien Hsiao ,  Wipul Jayasekara ,  Edward Lee ,  Vladimir Nikitin ,  Patrick Webb ,  Sue Zhang

发明人： Wen-Chien Hsiao ,  Wipul Jayasekara ,  Edward Lee ,  Vladimir Nikitin ,  Patrick Webb ,  Sue Zhang

IPC分类号： G11B5/127 ,  G11B5/147 ,  G11B5/31

CPC分类号： G11B5/1278 ,  G11B5/3143

摘要： A magnetoresistive read/write head having a first layer of alumina and a second layer of silicon dioxide overlaying a P3 layer of the head. In a preferred embodiment, the silicon dioxide layer is recessed away from an Air Bearing Surface (ABS) to reduce protrusion of a P2 layer and the P3 layer in the head, and to reduce degradation in the magnetic properties of the pole tips of the P2 and P3 layer ends.

摘要翻译： 具有第一氧化铝层和覆盖头部的P 3层的第二二氧化硅层的磁阻读写头。 在优选实施例中，二氧化硅层从空气轴承表面（ABS）凹入，以减少头部中的P 2层和P 3层的突出，并且降低磁头的磁性能的降低 P 2和P 3层结束。

公开(公告)号：US08704319B2

公开(公告)日：2014-04-22

申请号：US13332328

申请日：2011-12-20

申请人： Xueti Tang ,  Vladimir Nikitin ,  Dmytro Apalkov ,  Kiseok Moon ,  Steven M. Watts

发明人： Xueti Tang ,  Vladimir Nikitin ,  Dmytro Apalkov ,  Kiseok Moon ,  Steven M. Watts

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675

摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, and at least one damping reduction layer. The free layer has an intrinsic damping constant. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one damping reduction layer is adjacent to at least a portion of the free layer and configured to reduce the intrinsic damping constant of the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

摘要翻译： 一种方法和系统提供可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层，自由层和至少一个阻尼减小层。 自由层具有固有阻尼常数。 非磁性间隔层位于被钉扎层和自由层之间。 所述至少一个阻尼减小层与所述自由层的至少一部分相邻并且被配置为减小所述自由层的固有阻尼常数。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

公开(公告)号：US08698259B2

公开(公告)日：2014-04-15

申请号：US13332282

申请日：2011-12-20

申请人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin

发明人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin

IPC分类号： H01L27/22

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

摘要： A magnetic junction is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The magnetic junction may also include an additional nonmagnetic spacer layer and an additional pinned layer opposing the nonmagnetic spacer layer and the pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is configured to be switchable using a write current passed through the magnetic junction. The free layer is also configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction. In some aspects, the free layer includes at least one of a pinning layer(s) interleaved with ferromagnetic layer(s), two sets of interleaved ferromagnetic layers having different Curie temperatures, and a ferrimagnet having a saturation magnetization that increases with temperature between ferromagnetic layers.

摘要翻译： 描述了磁连接。 磁结包括钉扎层，非磁性间隔层和自由层。 磁结还可以包括附加的非磁性间隔层和与非磁性间隔层和被钉扎层相对的附加钉扎层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层被配置为可以使用通过磁结的写入电流来切换。 自由层还被配置为在静止状态下是热稳定的，并且由于来自写入电流的加热通过磁结而具有降低的热稳定性。 在一些方面，自由层包括与铁磁层交织的钉扎层，具有不同居里温度的两组交错铁磁层和具有随着温度升高的饱和磁化强度的铁磁体中的至少一个铁磁材料 层。

公开(公告)号：US20130155754A1

公开(公告)日：2013-06-20

申请号：US13332230

申请日：2011-12-20

申请人： Dmytro Apalkov ,  Vladimir Nikitin ,  Alexey Vasilyevitch Khvalkovskiy

发明人： Dmytro Apalkov ,  Vladimir Nikitin ,  Alexey Vasilyevitch Khvalkovskiy

IPC分类号： G11C19/02

CPC分类号： G11C19/0841 ,  G11C11/161 ,  G11C11/1675

摘要： A magnetic memory is described. The magnetic memory includes magnetic memory elements corresponding to magnetic memory cells and at least one shift register. Each magnetic memory element includes a pinned layer, a free layer, and a nonmagnetic spacer layer between the pinned and free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic memory element. The shift register(s) correspond to the magnetic memory elements. Each shift register includes domains separated by domain walls. A domain is antiparallel to an adjoining domain. The shift register(s) are configured such that an equilibrium state aligns a portion of the domains with the magnetic memory elements. The shift register(s) are also configured such that each domain walls shifts to a location of an adjoining domain wall when a shift current is passed through the shift register(s) in a direction along adjoining domains.

摘要翻译： 描述磁存储器。 磁存储器包括对应于磁存储器单元和至少一个移位寄存器的磁存储元件。 每个磁存储元件包括被钉扎层，自由层和在钉扎层和自由层之间的非磁性间隔层。 当写入电流通过磁存储元件时，自由层可在稳定磁状态之间切换。 移位寄存器对应于磁存储元件。 每个移位寄存器包括由畴壁分隔的域。 一个域与相邻域反向并行。 移位寄存器被配置为使得平衡状态将磁畴的一部分与磁存储元件对准。 移位寄存器还被配置为使得当移位电流沿着相邻域的方向通过移位寄存器时，每个畴壁移动到邻接畴壁的位置。

公开(公告)号：US20130154035A1

公开(公告)日：2013-06-20

申请号：US13332282

申请日：2011-12-20

申请人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin

发明人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin

IPC分类号： H01L27/22 ,  G11B5/84 ,  B05D5/12 ,  G11B5/66 ,  G11B5/673

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

摘要： A magnetic junction is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The magnetic junction may also include an additional nonmagnetic spacer layer and an additional pinned layer opposing the nonmagnetic spacer layer and the pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is configured to be switchable using a write current passed through the magnetic junction. The free layer is also configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction. In some aspects, the free layer includes at least one of a pinning layer(s) interleaved with ferromagnetic layer(s), two sets of interleaved ferromagnetic layers having different Curie temperatures, and a ferrimagnet having a saturation magnetization that increases with temperature between ferromagnetic layers.

摘要翻译： 描述了磁连接。 磁结包括钉扎层，非磁性间隔层和自由层。 磁结还可以包括附加的非磁性间隔层和与非磁性间隔层和被钉扎层相对的附加钉扎层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层被配置为可以使用通过磁结的写入电流来切换。 自由层还被配置为在静止状态下是热稳定的，并且由于来自写入电流的加热通过磁结而具有降低的热稳定性。 在一些方面，自由层包括与铁磁层交织的钉扎层，具有不同居里温度的两组交错铁磁层和具有随着温度升高的饱和磁化强度的铁磁体中的至少一个铁磁材料 层。

公开(公告)号：US20120170362A1

公开(公告)日：2012-07-05

申请号：US13415261

申请日：2012-03-08

申请人： Dmytro Apalkov ,  Vladimir Nikitin ,  David Druist ,  Steven M. Watts

发明人： Dmytro Apalkov ,  Vladimir Nikitin ,  David Druist ,  Steven M. Watts

IPC分类号： G11C11/15

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/5607 ,  H01L43/08

摘要： A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction.

摘要翻译： 描述了一种用于提供可用于磁存储器中的磁结的方法和系统。 磁结包括第一和第二固定层，第一和第二非磁性间隔层和自由层。 第一被钉扎层具有第一钉扎层磁矩并且是非磁性层。 第一非磁性间隔层位于第一被钉扎层和自由层之间。 自由层位于第一和第二非磁性间隔层之间。 第二被钉扎层具有第二钉扎层磁矩并且是非磁性层。 第二非磁性间隔层位于自由和第二被钉扎层之间。 第一和第二钉扎层磁矩是反铁磁耦合和自固定的。 磁结被配置为当写入电流通过磁性结时，允许自由层在稳定的磁状态之间切换。

公开(公告)号：US07990652B2

公开(公告)日：2011-08-02

申请号：US11949620

申请日：2007-12-03

申请人： Wen-Chien David Hsiao ,  Yimin Hsu ,  Quan-chiu Harry Lam ,  Yansheng Luo ,  Vladimir Nikitin ,  Changqing Shi

发明人： Wen-Chien David Hsiao ,  Yimin Hsu ,  Quan-chiu Harry Lam ,  Yansheng Luo ,  Vladimir Nikitin ,  Changqing Shi

IPC分类号： G11B5/187

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3146 ,  G11B5/315

摘要： A magnetic write head for perpendicular magnetic data recording having a notched write pole for reduced magnetic core width (MCW) dependence on skew. The write pole is configured with a notch that can extend to or slightly beyond the flare point of the write pole, and is formed on the leading portion of the write pole. The notch can have a notch depth, as measured from the ABS of 50-200 nm or about 120 nm. The notch can have a notch height, measured in the down track direction that is 40-90 nm or 20-90 percent of the write pole height.

摘要翻译： 用于垂直磁数据记录的磁写头，具有用于减小磁芯宽度（MCW）的偏斜写入极对偏斜的依赖性。 写入极配置有可以延伸到或稍微超过写入极的闪点的凹口，并且形成在写入极的引导部分上。 切口可以具有从50-200nm或约120nm的ABS测量的切口深度。 切口可以具有沿向下方向测量的切口高度，其为40-90nm或写入极高度的20-90％。