公开(公告)号：US20070188939A1

公开(公告)日：2007-08-16

申请号：US11352491

申请日：2006-02-10

申请人： Robert Beach ,  Wipul Jayasekara ,  Vladimir Nikitin

发明人： Robert Beach ,  Wipul Jayasekara ,  Vladimir Nikitin

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3912 ,  G11B5/40

摘要： In a CPP MR device such as a tunnel magnetoresistive (TMR) device, shoulders that have a magnetic moment that is matched to the magnetic moments of the free layer extend between the free layer and the S2 shield to provide an electrical path from one shoulder, through the shield, to the other shoulder for dissipating edge charges. Thus, a CPP MR device may include a seed stack, a pinned stack on the seed stack, and a tunnel barrier on the pinned stack. A free stack may be on the tunnel barrier, and the free stack can include a free sublayer separated from a magnetic shield and a path for dissipating edge charges in the free stack through the magnetic shield.

摘要翻译： 在诸如隧道磁阻（TMR）器件的CPP MR器件中，具有与自由层的磁矩匹配的磁矩的肩部在自由层和S 2屏蔽之间延伸以提供从一个肩部 ，通过屏蔽，到另一肩，消散边缘电荷。 因此，CPP MR装置可以包括种子堆叠，种子堆叠上的钉扎堆叠以及钉扎堆叠上的隧道势垒。 自由堆叠可以在隧道屏障上，并且自由堆叠可以包括与磁屏蔽分离的自由子层和用于通过磁屏蔽消散自由堆叠中的边缘电荷的路径。

公开(公告)号：US20060256482A1

公开(公告)日：2006-11-16

申请号：US11126508

申请日：2005-05-10

申请人： Satoru Araki ,  Robert Beach ,  Marie-Claire Cyrille ,  Wipul Jayasekara ,  Quang Le ,  Jui-Lung Li ,  David Seagle ,  Howard Zolla

发明人： Satoru Araki ,  Robert Beach ,  Marie-Claire Cyrille ,  Wipul Jayasekara ,  Quang Le ,  Jui-Lung Li ,  David Seagle ,  Howard Zolla

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  G11B5/112 ,  G11B5/3169 ,  G11B5/3906 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A method for fabricating magnetic side shields for an MR sensor of a magnetic head. Following the deposition of MR sensor layers, a first DLC layer is deposited. Milling mask layers are then deposited, and outer portions of the milling mask layers are removed such that a remaining central portion of the milling mask layers is formed having straight sidewalls and no undercuts. Outer portions of the sensor layers are then removed such that a relatively thick remaining central portion of the milling mask resides above the remaining sensor layers. A thin electrical insulation layer is deposited, followed by the deposition of magnetic side shields. A second DLC layer is deposited and the remaining mask layers are then removed utilizing a chemical mechanical polishing (CMP) liftoff step. Thereafter, the first DLC layer and the second DLC layer are removed and a second magnetic shield layer is then fabricated thereabove.

公开(公告)号：US20070188940A1

公开(公告)日：2007-08-16

申请号：US11352511

申请日：2006-02-10

申请人： Robert Beach ,  Vladimir Nikitin

发明人： Robert Beach ,  Vladimir Nikitin

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912

摘要： In a tunnelmagneto resistive (TMR) device, free stack sublayers are separated by an intermediate spacer layer that serves to ensure a uniform circumferential magnetization in the free stack, counterbalancing orange-peel coupling by anti ferromagnetic exchange coupling. On top of the upper free stack sublayer a thin upper anti ferromagnetic layer may be formed to act as a hard bias layer and suppress side reading. The thickness of the upper AFT layer is established to tune sensor sensitivity to external fields as well as to promote greater sensor sensitivity.

摘要翻译： 在隧道磁阻（TMR）器件中，自由堆叠子层被中间间隔层隔开，中间间隔层用于确保自由堆叠中的均匀圆周磁化，通过反铁磁交换耦合平衡橙皮耦合。 在上部自由堆叠子层的顶部，可以形成薄的上部反铁磁性层作为硬偏置层并抑制侧面读数。 建立上部AFT层的厚度以调节对外部场的传感器灵敏度，并提高传感器灵敏度。

公开(公告)号：US20070188942A1

公开(公告)日：2007-08-16

申请号：US11355045

申请日：2006-02-14

申请人： Robert Beach ,  David Heim ,  Vladimir Nikitin ,  David Seagle

发明人： Robert Beach ,  David Heim ,  Vladimir Nikitin ,  David Seagle

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/398 ,  G01R33/09 ,  G11B5/399

摘要： In a tunnel magnetoresistive (TMR) device, free sublayers are separated by an intermediate spacer layer that serves to ensure a uniform circumferential magnetization in the free stack, counterbalancing orange-peel coupling by antiferromagnetic exchange coupling. Thus, a CPP MR device may have a seed stack, a pinned stack on the seed stack, and a tunnel barrier on the pinned stack. A free stack can be on the tunnel barrier, and the free stack can include structure for promoting uniform circumferential magnetization in the free stack.

摘要翻译： 在隧道磁阻（TMR）器件中，自由子层由中间间隔层隔开，中间间隔层用于确保自由堆叠中的均匀圆周磁化，通过反铁磁交换耦合平衡橙皮耦合。 因此，CPP MR装置可以具有种子堆叠，种子堆叠上的钉扎堆叠以及钉扎堆叠上的隧道势垒。 自由堆叠可以在隧道屏障上，并且自由堆叠可以包括用于在自由堆叠中促进均匀周向磁化的结构。

公开(公告)号：US08853749B2

公开(公告)日：2014-10-07

申请号：US13362669

申请日：2012-01-31

申请人： Alexander Lidow ,  Jianjun Cao ,  Robert Beach ,  Robert Strittmatter ,  Guang Y. Zhao ,  Alana Nakata

发明人： Alexander Lidow ,  Jianjun Cao ,  Robert Beach ,  Robert Strittmatter ,  Guang Y. Zhao ,  Alana Nakata

IPC分类号： H01L29/76 ,  H01L21/336 ,  H01L29/423 ,  H01L29/778 ,  H01L29/66 ,  H01L21/265 ,  H01L29/20

CPC分类号： H01L21/26586 ,  H01L21/26546 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787

摘要： A self-aligned transistor gate structure that includes an ion-implanted portion of gate material surrounded by non-implanted gate material on each side. The gate structure may be formed, for example, by applying a layer of GaN material over an AlGaN barrier layer and implanting a portion of the GaN layer to create the gate structure that is laterally surrounded by the GaN layer.

摘要翻译： 一种自对准的晶体管栅极结构，其包括在每侧由非植入栅极材料包围的栅极材料的离子注入部分。 栅极结构可以例如通过在AlGaN阻挡层上施加GaN材料层并且注入GaN层的一部分以形成由GaN层横向包围的栅极结构来形成。

公开(公告)号：US08699474B2

公开(公告)日：2014-04-15

申请号：US11622161

申请日：2007-01-11

申请人： Robert Beach

发明人： Robert Beach

IPC分类号： H04W4/00 ,  H04W84/12

CPC分类号： H04W84/12 ,  H04L12/4625 ,  H04L29/04 ,  H04L69/08 ,  H04L69/18 ,  H04W12/02 ,  H04W16/26 ,  H04W60/00 ,  H04W74/00 ,  H04W88/08 ,  H04W88/085 ,  H04W88/12

摘要： A wireless local area network is provided with simplified RF ports which are configured to provide lower level media access control functions. Higher level media access control functions and management functions are provided with a system having a cell controller, which may service one or more RF ports. Mobile units can also be configured with the higher level media access control functions being performed in a host processor.

摘要翻译： 无线局域网提供有简化的RF端口，其被配置为提供较低级媒体访问控制功能。 具有高级媒体访问控制功能和管理功能的系统具有可以服务于一个或多个RF端口的小区控制器的系统。 移动单元还可以配置在主处理器中执行的更高级媒体访问控制功能。

公开(公告)号：US08697581B2

公开(公告)日：2014-04-15

申请号：US12217830

申请日：2008-07-09

申请人： Robert Beach ,  Paul Bridger

发明人： Robert Beach ,  Paul Bridger

IPC分类号： H01L21/302

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/51 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66734 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/7835

摘要： A III-nitride trench device has a vertical conduction region with an interrupted conduction channel when the device is not on, providing an enhancement mode device. The trench structure may be used in a vertical conduction or horizontal conduction device. A gate dielectric provides improved performance for the device by being capable of withstanding higher electric field or manipulating the charge in the conduction channel. A passivation of the III-nitride material decouples the dielectric from the device to permit lower dielectric constant materials to be used in high power applications.

摘要翻译： III型氮化物沟槽器件在器件未导通时具有具有中断的导通通道的垂直导电区域，提供增强型器件。 沟槽结构可以用在垂直传导或水平传导装置中。 门电介质通过能够承受更高的电场或操纵传导通道中的电荷而为器件提供改进的性能。 III族氮化物材料的钝化将电介质与器件分离，以允许较低的介电常数材料用于高功率应用。

公开(公告)号：US20130240963A1

公开(公告)日：2013-09-19

申请号：US13421963

申请日：2012-03-16

申请人： Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Witold Kula ,  Po-Kang Wang

发明人： Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Witold Kula ,  Po-Kang Wang

IPC分类号： H01L29/82 ,  H01L21/8239

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/12

摘要： An STT MTJ cell is formed with a magnetic anisotropy of its free and reference layers that is perpendicular to their planes of formation. The reference layer of the cell is an SAF multilayered structure with a single magnetic domain to enhance the bi-stability of the magnetoresistive states of the cell. The free layer of the cell is etched back laterally from the reference layer, so that the fringing stray field of the reference layer is no more than 15% of the coercivity of the free layer and has minimal effect on the free layer.

摘要翻译： 形成具有垂直于其形成平面的游离和参考层的磁各向异性的STT MTJ电池。 单元的参考层是具有单个磁畴的SAF多层结构，以增强单元的磁阻状态的双稳定性。 电池的自由层从参考层横向回蚀刻，使得参考层的边缘杂散场不超过自由层的矫顽力的15％，并且对自由层的影响最小。

公开(公告)号：US08441030B2

公开(公告)日：2013-05-14

申请号：US11238206

申请日：2005-09-29

申请人： Robert Beach

发明人： Robert Beach

IPC分类号： H01L29/66 ,  H01L29/74

CPC分类号： H01L29/7786 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/872

摘要： A III-nitride power semiconductor device that includes a plurality of III-nitride heterojunctions.

摘要翻译： 一种III族氮化物功率半导体器件，其包括多个III族氮化物异质结。

公开(公告)号：US08416735B2

公开(公告)日：2013-04-09

申请号：US10649207

申请日：2003-08-27

申请人： Robert Beach

发明人： Robert Beach

IPC分类号： H04W4/00

CPC分类号： H04W88/06 ,  H04W4/18 ,  H04W52/288 ,  H04W84/10 ,  H04W84/12 ,  H04W88/04 ,  H04W92/10

摘要： A system is provided with mobile units that are arranged to conduct wireless data communications with access points following a first protocol, such as IEEE standard 802.11. The mobile units are further arranged for modified protocol communications with peripheral devices that permanently associate with a mobile unit.

摘要翻译： 为系统提供移动单元，移动单元被安排为按照诸如IEEE标准802.11之类的第一协议进行与接入点的无线数据通信。 移动单元还被布置成用于与与移动单元永久关联的外围设备的修改的协议通信。