公开(公告)号：US09093821B2

公开(公告)日：2015-07-28

申请号：US14103223

申请日：2013-12-11

Applicant: Wisconsin Alumni Research Foundation

Inventor： Luke J. Mawst ,  Dan Botez ,  Thomas L. Earles ,  Jeremy D. Kirch ,  Christopher A. Sigler

IPC: H01S5/00 ,  H01S5/34 ,  H01S5/343 ,  H01S5/187

CPC classification number: H01S5/3401 ,  H01S5/1046 ,  H01S5/1228 ,  H01S5/187 ,  H01S5/3402 ,  H01S5/34306 ,  H01S2301/145

Abstract: Semiconductor lasers comprise a substrate; an active layer configured to generate transverse magnetic (TM) polarized light under an electrical bias; an upper cladding layer; a lower cladding layer; and a distributed feedback (DFB) grating defined by the interface of a layer of metal and a layer of semiconductor under the layer of metal, the interface periodically corrugated in the longitudinal direction of the laser with a periodicity of ΛDFB=mλ/(2neff), wherein m>1. The DFB grating is configured such that loss of one or more antisymmetric longitudinal modes of the laser structure via absorption to the DFB grating is sufficiently maximized so as to produce lasing of a symmetric longitudinal mode of the laser with laser emission characterized by a single-lobe beam along each direction defined by the grating diffraction orders corresponding to emission away from the plane of the grating.

Abstract translation: 半导体激光器包括衬底; 有源层，被配置为在电偏压下产生横向磁（TM）偏振光; 上包层; 下包层; 以及由金属层与金属层之间的半导体界面界定的分布式反馈（DFB）光栅，该界面在激光器的纵向方向周期性地波纹，周期为ΛDFB=mλ/（2neff） 其中m> 1。 DFB光栅被配置为使得激光器结构经由吸收到DFB光栅的一个或多个反对称纵向模式的损耗被充分地最大化，以便产生具有以单瓣为特征的激光发射的激光的对称纵向模式的激光 沿着由对应于离开光栅平面的发射的光栅衍射级限定的每个方向的光束。

公开(公告)号：US09742151B1

公开(公告)日：2017-08-22

申请号：US15145951

申请日：2016-05-04

Applicant: Wisconsin Alumni Research Foundation

Inventor： Dan Botez ,  Christopher A. Sigler ,  Thomas L. Earles ,  Jeremy D. Kirch

IPC: H01S5/12 ,  H01S5/34 ,  H01S5/028 ,  H01S5/343

CPC classification number: H01S5/34313 ,  H01S5/0207 ,  H01S5/0287 ,  H01S5/0604 ,  H01S5/1085 ,  H01S5/1092 ,  H01S5/1215 ,  H01S5/3402 ,  H01S5/34306 ,  H01S5/4068

Abstract: A terahertz quantum cascade laser device is provided comprising a substrate having a top substrate surface, a bottom substrate surface, and an exit facet extending between the top substrate surface and the bottom substrate surface at an angle θtap. The device comprises a waveguide structure having a top surface, a bottom surface, a front facet extending between the top surface and the bottom surface and positioned proximate to the exit facet, and a back facet extending between the top surface and the bottom surface and oppositely facing the front facet. The waveguide structure comprises a quantum cascade laser structure configured to generate light comprising light of a first frequency ω1, light of a second frequency ω2, and light of a third frequency ωTHz, wherein ωTHz=ω1−ω2; an upper cladding layer; and a lower cladding layer. The device comprises a distributed feedback grating layer configured to provide optical feedback for one or both of the light of the first frequency ω1 and the light of the second frequency ω2 and to produce lasing at one or both of the first frequency ω1 and the second frequency ω2, thereby resulting in laser emission at the third frequency ωTHz at a Cherenkov angle θTHz through the bottom surface of the waveguide structure into the substrate and exiting the substrate through the exit facet. The device comprises a high-reflectivity coating on the front facet of the waveguide structure.

公开(公告)号：US20150162724A1

公开(公告)日：2015-06-11

申请号：US14103223

申请日：2013-12-11

Applicant: Wisconsin Alumni Research Foundation

Inventor： Luke J. Mawst ,  Dan Botez ,  Thomas L. Earles ,  Jeremy D. Kirch ,  Christopher A. Sigler

IPC: H01S5/34 ,  H01S5/187 ,  H01S5/343

CPC classification number: H01S5/3401 ,  H01S5/1046 ,  H01S5/1228 ,  H01S5/187 ,  H01S5/3402 ,  H01S5/34306 ,  H01S2301/145

Abstract: Semiconductor lasers comprise a substrate; an active layer configured to generate transverse magnetic (TM) polarized light under an electrical bias; an upper cladding layer; a lower cladding layer; and a distributed feedback (DFB) grating defined by the interface of a layer of metal and a layer of semiconductor under the layer of metal, the interface periodically corrugated in the longitudinal direction of the laser with a periodicity of ΛDFB=mλ/(2neff), wherein m>1. The DFB grating is configured such that loss of one or more antisymmetric longitudinal modes of the laser structure via absorption to the DFB grating is sufficiently maximized so as to produce lasing of a symmetric longitudinal mode of the laser with laser emission characterized by a single-lobe beam along each direction defined by the grating diffraction orders corresponding to emission away from the plane of the grating.

Abstract translation: 半导体激光器包括衬底; 有源层，被配置为在电偏压下产生横向磁（TM）偏振光; 上包层; 下包层; 以及由金属层与金属层之间的半导体界面界定的分布式反馈（DFB）光栅，该界面在激光器的纵向方向周期性地波纹，周期为ΛDFB=mλ/（2neff） 其中m> 1。 DFB光栅被配置为使得激光器结构经由吸收到DFB光栅的一个或多个反对称纵向模式的损耗被充分地最大化，以便产生具有以单瓣为特征的激光发射的激光的对称纵向模式的激光 沿着由对应于离开光栅平面的发射的光栅衍射级限定的每个方向的光束。