摘要:
A web server for supporting a collaborative animation production service. The web server includes a user interface (UI) unit to provide a UI to receive direction data for each scene required for animation production in parallel to users connected to the web server, and a generating unit to combine the direction data input to the UI for each scene and generate an animation corresponding to the combined direction data. A plurality of users thereby collaborate to produce an animation in real time, making it possible to shorten the production time of the animation and produce a high quality animation.
摘要:
A web server for supporting a collaborative animation production service. The web server includes a user interface (UI) unit to provide a UI to receive direction data for each scene required for animation production in parallel to users connected to the web server, and a generating unit to combine the direction data input to the UI for each scene and generate an animation corresponding to the combined direction data. A plurality of users thereby collaborate to produce an animation in real time, making it possible to shorten the production time of the animation and produce a high quality animation.
摘要:
Described herein is an animation authoring apparatus and method thereof for authoring an animation. The apparatus includes a storyboard editor that provides a storyboard editing display that a user may interact with to edit a storyboard, and to store the edited storyboard. The apparatus further includes a parser to parse syntax of the edited storyboard, and a rendering engine to convert the edited storyboard into a graphic animation based on the parsed syntax of the edited storyboard.
摘要:
A dielectric paste composition including: a plurality of inorganic dielectric particles, a binder, a solvent, and a halogenated hydrocarbon. Also disclosed is a method of forming a dielectric layer, a dielectric layer, and a device including the dielectric layer.
摘要:
The semiconductor memory device includes a first memory cell array including at least one first memory cell and at least one second memory cell corresponding to the at least one first memory cell, a first low bit line connected to the at least one first memory cell, a first low complementary bit line connected to the at least one second memory cell, a first switch unit having a first terminal connected to the first low bit line, a second switch unit having a first terminal connected to the first low complementary bit line, a first global bit line connected to a second terminal of the first switch unit, a first global complementary bit line connected to a second terminal of the second switch unit, and a plurality of sensing amplifying units connected to the first global bit line and the first global complementary bit line.
摘要:
Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material. This sequential etching of the first material at a faster rate than the second material may yield a contact hole having a recessed sidewall.
摘要:
Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material. This sequential etching of the first material at a faster rate than the second material may yield a contact hole having a recessed sidewall.
摘要:
The mold clamping unit comprises a column mounted in a transfer means and moving in forward and backward direction; a mold clamping piston in which clamping operation and clamping-releasing operation are performed; plurality of column teeth disposed on a surface of the column along an axial direction of the column; center bore provided in a central of the mold clamping piston; clamping tooth seating groove with a plurality of clamping teeth inside the mold clamping piston contacting the center bore; rotating plate with plurality of clamping tooth guide grooves separated from the clamping teeth in the axial direction of the column; and a teeth rod positioned in each of the clamping tooth guide groove, wherein each teeth rod is connected to each clamping teeth during the rotation of the rotating plate, for moving each clamping tooth in a central or radial direction of the rotating plate and clamping of the clamping tooth and the column can proceed.
摘要:
A motion estimation method for enhancing a video compression speed, and a video encoder using the same are provided. The motion estimation method includes determining a global motion type of a previous frame from motion vectors of the previous frame, setting a search area for a specified motion block included in a current frame based on the global motion type, and searching for a motion vector within the set search area.
摘要:
Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material. This sequential etching of the first material at a faster rate than the second material may yield a contact hole having a recessed sidewall.