Web server for supporting collaborative animation production service and method thereof
    2.
    发明申请
    Web server for supporting collaborative animation production service and method thereof 有权
    用于支持协作动画制作服务的Web服务器及其方法

    公开(公告)号:US20090300515A1

    公开(公告)日:2009-12-03

    申请号:US12292954

    申请日:2008-12-01

    IPC分类号: G06F3/048

    摘要: A web server for supporting a collaborative animation production service. The web server includes a user interface (UI) unit to provide a UI to receive direction data for each scene required for animation production in parallel to users connected to the web server, and a generating unit to combine the direction data input to the UI for each scene and generate an animation corresponding to the combined direction data. A plurality of users thereby collaborate to produce an animation in real time, making it possible to shorten the production time of the animation and produce a high quality animation.

    摘要翻译: 用于支持协作动画制作服务的Web服务器。 网络服务器包括用户界面(UI)单元,用于提供用于接收并行连接到web服务器的用户的动画制作所需的每个场景的方向数据的UI,以及生成单元,用于将输入到UI的方向数据组合 每个场景并生成与组合方向数据相对应的动画。 因此,多个用户协作来实时产生动画,使得可以缩短动画的制作时间并产生高质量动画。

    Apparatus and method of authoring animation through storyboard
    3.
    发明授权
    Apparatus and method of authoring animation through storyboard 有权
    通过故事板创作动画的设备和方法

    公开(公告)号:US08223153B2

    公开(公告)日:2012-07-17

    申请号:US12612709

    申请日:2009-11-05

    申请人: Jin-young Kim

    发明人: Jin-young Kim

    IPC分类号: G06T13/00 G09G5/00

    CPC分类号: G06F17/24 G06T13/00

    摘要: Described herein is an animation authoring apparatus and method thereof for authoring an animation. The apparatus includes a storyboard editor that provides a storyboard editing display that a user may interact with to edit a storyboard, and to store the edited storyboard. The apparatus further includes a parser to parse syntax of the edited storyboard, and a rendering engine to convert the edited storyboard into a graphic animation based on the parsed syntax of the edited storyboard.

    摘要翻译: 这里描述了一种动画制作装置及其制作动画的方法。 该设备包括故事板编辑器,其提供用户可以与之编辑故事板的故事板编辑显示,以及存储编辑的故事板。 该装置还包括解析器,用于解析编辑的故事板的语法,以及渲染引擎,用于基于经编辑的故事板的解析语法将编辑的故事板转换为图形动画。

    Semiconductor memory device having hierarchical bit line structure and method of driving the semiconductor memory device
    5.
    发明授权
    Semiconductor memory device having hierarchical bit line structure and method of driving the semiconductor memory device 失效
    具有分级位线结构的半导体存储器件和驱动半导体存储器件的方法

    公开(公告)号:US08331162B2

    公开(公告)日:2012-12-11

    申请号:US12662222

    申请日:2010-04-06

    IPC分类号: G11C7/10

    摘要: The semiconductor memory device includes a first memory cell array including at least one first memory cell and at least one second memory cell corresponding to the at least one first memory cell, a first low bit line connected to the at least one first memory cell, a first low complementary bit line connected to the at least one second memory cell, a first switch unit having a first terminal connected to the first low bit line, a second switch unit having a first terminal connected to the first low complementary bit line, a first global bit line connected to a second terminal of the first switch unit, a first global complementary bit line connected to a second terminal of the second switch unit, and a plurality of sensing amplifying units connected to the first global bit line and the first global complementary bit line.

    摘要翻译: 半导体存储器件包括第一存储器单元阵列,其包括至少一个第一存储单元和与该至少一个第一存储单元对应的至少一个第二存储单元,连接至该至少一个第一存储单元的第一低位线, 连接到所述至少一个第二存储器单元的第一低互补位线,具有连接到所述第一低位线的第一端子的第一开关单元,具有连接到所述第一低互补位线的第一端子的第二开关单元, 连接到第一开关单元的第二端子的全局位线,连接到第二开关单元的第二端子的第一全局互补位线以及连接到第一全局位线和第一全局互补位置的多个感测放大单元 位线。

    Methods of Forming Integrated Circuit Devices Using Contact Hole Spacers to Improve Contact Isolation
    6.
    发明申请
    Methods of Forming Integrated Circuit Devices Using Contact Hole Spacers to Improve Contact Isolation 有权
    使用接触孔隔离器形成集成电路器件以改善接触隔离的方法

    公开(公告)号:US20110104889A1

    公开(公告)日:2011-05-05

    申请号:US12965091

    申请日:2010-12-10

    IPC分类号: H01L21/768

    CPC分类号: H01L21/76897 H01L21/76831

    摘要: Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material. This sequential etching of the first material at a faster rate than the second material may yield a contact hole having a recessed sidewall.

    摘要翻译: 形成集成电路器件的方法包括接触孔中的上部侧壁间隔物,以在保持相对低的接触电阻的同时对接触插塞提供增强的电隔离。 这些方法包括在半导体衬底上形成层间绝缘层。 层间绝缘层至少包括半导体衬底上的第一材料的第一电绝缘层和第一电绝缘层上的第二材料的第二电绝缘层。 形成延伸穿过层间绝缘层并暴露半导体衬底的主表面的接触孔。 可以通过相对于第二材料依次选择性地蚀刻第二电绝缘层和第一电绝缘层来形成第一材料的蚀刻速率。 以比第二材料更快的速率顺次蚀刻第一材料可能产生具有凹陷侧壁的接触孔。

    Methods of forming integrated circuit devices using contact hole spacers to improve contact isolation
    7.
    发明授权
    Methods of forming integrated circuit devices using contact hole spacers to improve contact isolation 有权
    使用接触孔间隔物形成集成电路器件以改善接触隔离的方法

    公开(公告)号:US07875551B2

    公开(公告)日:2011-01-25

    申请号:US12575682

    申请日:2009-10-08

    IPC分类号: H01L23/58

    CPC分类号: H01L21/76897 H01L21/76831

    摘要: Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material. This sequential etching of the first material at a faster rate than the second material may yield a contact hole having a recessed sidewall.

    摘要翻译: 形成集成电路器件的方法包括接触孔中的上部侧壁间隔物,以在保持相对低的接触电阻的同时对接触插塞提供增强的电隔离。 这些方法包括在半导体衬底上形成层间绝缘层。 层间绝缘层至少包括半导体衬底上的第一材料的第一电绝缘层和第一电绝缘层上的第二材料的第二电绝缘层。 形成延伸穿过层间绝缘层并暴露半导体衬底的主表面的接触孔。 该接触孔可以通过相对于第二材料依次选择性地蚀刻第二电绝缘层和第一电绝缘层而形成,并以较快的第一材料的蚀刻速率。 以比第二材料更快的速率顺次蚀刻第一材料可能产生具有凹陷侧壁的接触孔。

    Mold clamping unit
    8.
    发明授权
    Mold clamping unit 有权
    模具夹紧单元

    公开(公告)号:US07402037B2

    公开(公告)日:2008-07-22

    申请号:US11512373

    申请日:2006-08-30

    IPC分类号: B29C45/64

    CPC分类号: B29C45/68

    摘要: The mold clamping unit comprises a column mounted in a transfer means and moving in forward and backward direction; a mold clamping piston in which clamping operation and clamping-releasing operation are performed; plurality of column teeth disposed on a surface of the column along an axial direction of the column; center bore provided in a central of the mold clamping piston; clamping tooth seating groove with a plurality of clamping teeth inside the mold clamping piston contacting the center bore; rotating plate with plurality of clamping tooth guide grooves separated from the clamping teeth in the axial direction of the column; and a teeth rod positioned in each of the clamping tooth guide groove, wherein each teeth rod is connected to each clamping teeth during the rotation of the rotating plate, for moving each clamping tooth in a central or radial direction of the rotating plate and clamping of the clamping tooth and the column can proceed.

    摘要翻译: 模具夹紧单元包括安装在传送装置中并沿前后方向移动的柱体; 夹持操作和夹紧释放操作的模具夹紧活塞; 沿列的轴向设置在柱的表面上的多个列齿; 中心孔设置在模具夹紧活塞的中心; 夹紧齿座槽与模具夹紧活塞内的多个夹紧齿接触中心孔; 旋转板,其具有沿着柱的轴向与夹持齿分离的多个夹紧齿导向槽; 以及定位在每个夹紧齿导向槽中的齿杆,其中每个齿杆在旋转板的旋转期间连接到每个夹紧齿,用于沿旋转板的中心或径向方向移动每个夹紧齿,并夹紧 夹紧齿和柱可以进行。

    Enhanced motion estimation method, video encoding method and apparatus using the same
    9.
    发明授权
    Enhanced motion estimation method, video encoding method and apparatus using the same 有权
    增强运动估计方法,视频编码方法和使用该方法的装置

    公开(公告)号:US08571105B2

    公开(公告)日:2013-10-29

    申请号:US11511484

    申请日:2006-08-29

    IPC分类号: H04N7/12 H04N11/02 H04N11/04

    CPC分类号: H04N19/57 H04N19/527

    摘要: A motion estimation method for enhancing a video compression speed, and a video encoder using the same are provided. The motion estimation method includes determining a global motion type of a previous frame from motion vectors of the previous frame, setting a search area for a specified motion block included in a current frame based on the global motion type, and searching for a motion vector within the set search area.

    摘要翻译: 提供了一种用于提高视频压缩速度的运动估计方法,以及使用该运动估计方法的视频编码器。 运动估计方法包括:根据前一帧的运动矢量确定前一帧的全局运动类型,基于全局运动类型为当前帧中包括的指定运动块设置搜索区域,以及搜索运动矢量 设置搜索区域。

    Methods of forming integrated circuit devices using contact hole spacers to improve contact isolation

    公开(公告)号:US08053358B2

    公开(公告)日:2011-11-08

    申请号:US12965091

    申请日:2010-12-10

    IPC分类号: H01L23/58

    CPC分类号: H01L21/76897 H01L21/76831

    摘要: Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material. This sequential etching of the first material at a faster rate than the second material may yield a contact hole having a recessed sidewall.