公开(公告)号：US09184391B2

公开(公告)日：2015-11-10

申请号：US14168273

申请日：2014-01-30

Applicant: Xerox Corporation

Inventor： Yuning Li ,  Beng S. Ong ,  Yiliang Wu ,  Ping Liu

IPC: C07D487/04 ,  H01L51/00 ,  C08G61/12

CPC classification number: H01L51/0036 ,  C07D487/04 ,  C08G61/124 ,  C08G61/126

Abstract: A compound including at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.

Abstract translation: 包括至少一种类型的任选取代的吲哚咔唑部分和至少一个二价键的化合物。

公开(公告)号：US20140148567A1

公开(公告)日：2014-05-29

申请号：US14168273

申请日：2014-01-30

Applicant: Xerox Corporation

Inventor： Yuning Li

IPC: H01L51/00

CPC classification number: H01L51/0036 ,  C07D487/04 ,  C08G61/124 ,  C08G61/126

Abstract: A compound including at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.

Abstract translation: 包括至少一种类型的任选取代的吲哚咔唑部分和至少一个二价键的化合物。

公开(公告)号：US08729222B2

公开(公告)日：2014-05-20

申请号：US13913679

申请日：2013-06-10

Applicant: Xerox Corporation

Inventor： Yuning Li ,  Yiliang Wu ,  Ping Liu ,  Paul F. Smith

IPC: C08G75/00

CPC classification number: H01L51/0003 ,  C07D493/04 ,  C07D495/04 ,  C07D517/04 ,  H01L51/0035 ,  H01L51/0043 ,  H01L51/0072 ,  H01L51/0541 ,  H01L51/0545

Abstract: A thin-film transistor comprises a semiconducting layer comprising a semiconducting material selected from Formula (I) or (II): wherein X, R1, R2, R3, R4, R5 a, b, and n are as described herein. Semiconducting compositions of Formula (I) or (II) are also described.

Abstract translation: 薄膜晶体管包括包含选自式（I）或（II）的半导体材料的半导体层：其中X，R 1，R 2，R 3，R 4，R 5 a，b和n如本文所述。 还描述了式（I）或（II）的半导体组合物。

公开(公告)号：US20140088313A1

公开(公告)日：2014-03-27

申请号：US14097437

申请日：2013-12-05

Applicant: Xerox Corporation

Inventor： Yiliang Wu ,  Beng S. Ong ,  Yu Qi ,  Yuning Li

IPC: H01L51/00

CPC classification number: H01L51/0072 ,  H01L51/0067 ,  H01L51/0541

Abstract: A substituted indolocarbazole comprising at least one optionally substituted thienyl.

Abstract translation: 包含至少一个任选取代的噻吩基的取代的吲哚咔唑。

公开(公告)号：US20130273688A1

公开(公告)日：2013-10-17

申请号：US13913679

申请日：2013-06-10

Applicant: Xerox Corporation

Inventor： Yuning Li ,  Yiliang Wu ,  Ping Liu ,  Paul F. Smith

IPC: H01L51/00

CPC classification number: H01L51/0003 ,  C07D493/04 ,  C07D495/04 ,  C07D517/04 ,  H01L51/0035 ,  H01L51/0043 ,  H01L51/0072 ,  H01L51/0541 ,  H01L51/0545

Abstract: A thin-film transistor comprises a semiconducting layer comprising a semiconducting material selected from Formula (I) or (II): wherein X, R1, R2, R3, R4, R5 a, b, and n are as described herein. Semiconducting compositions of Formula (I) or (II) are also described.

Abstract translation: 薄膜晶体管包括包含选自式（I）或（II）的半导体材料的半导体层：其中X，R 1，R 2，R 3，R 4，R 5 a，b和n如本文所述。 还描述了式（I）或（II）的半导体组合物。

公开(公告)号：US20130101326A1

公开(公告)日：2013-04-25

申请号：US13705824

申请日：2012-12-05

Applicant: XEROX CORPORATION

Inventor： Yu Qi ,  Qi Zhang ,  Yuning Li ,  Nan-Xing Hu

IPC: C23C28/00 ,  G03G15/20

CPC classification number: C23C28/32 ,  B32B27/281 ,  B32B27/283 ,  B32B27/285 ,  B32B27/304 ,  B32B27/322 ,  B32B27/34 ,  B32B27/36 ,  B32B2255/10 ,  B32B2255/205 ,  B32B2307/202 ,  B32B2307/306 ,  B32B2307/51 ,  B32B2307/748 ,  B32B2413/00 ,  B82Y99/00 ,  C08K3/08 ,  C09D5/24 ,  C09D7/61 ,  C09D7/67 ,  C23C18/02 ,  C23C18/08 ,  C23C28/00 ,  C23C28/021 ,  C23C28/023 ,  C25D5/34 ,  C25D7/006 ,  G03G15/2057 ,  G03G2215/2016 ,  Y10S977/773

Abstract: The presently disclosed embodiments are directed to an improved metallization process for making fuser members which avoids the extra steps of metal nanoparticle seeding or special substrate treatment. In embodiments, a metallized substrate, formed by dip-coating or spraying with a metal nanoparticle dispersion which is subsequently thermally annealed, is used for the complete fabrication of the fuser member.

Abstract translation: 目前公开的实施例涉及用于制造定影器构件的改进的金属化方法，其避免金属纳米颗粒接种或特殊基底处理的额外步骤。 在实施例中，通过浸涂或喷涂随后热退火的金属纳米颗粒分散体形成的金属化基底用于完全制造定影器部件。