公开(公告)号：US11692935B2

公开(公告)日：2023-07-04

申请号：US17276825

申请日：2021-01-13

Applicant: XI'AN UNIVERSITY OF TECHNOLOGY

Inventor： Wei Shi ,  Lei Hou ,  Cheng Ma ,  Chengang Dong ,  Lei Yang ,  Jiaguang Han ,  Yanfeng Li ,  Chunmei Ouyang ,  Jianqiang Gu ,  Liguo Zhu ,  Zhaohui Zhai ,  Lianghui Du ,  Yi Zou

IPC: G01N21/3581 ,  G01N21/3577 ,  G01N21/39 ,  G01N33/487 ,  G01N21/17

CPC classification number: G01N21/3581 ,  G01N21/3577 ,  G01N21/39 ,  G01N33/48721 ,  G01N2021/177 ,  G01N2021/396

Abstract: Disclosed is a transient-state THz spectrometer applied to cells and biological macromolecules, including a femtosecond laser amplifier. A femtosecond laser output by the femtosecond laser amplifier is divided into two beams of pump light and probe light after passing through a beam splitter of which a transmission-reflection ratio is 7:3, the pump light is focused to irradiate a gap between electrodes of a nonlinear photoconductive antenna and emit a terahertz wave after successively passing through a half wave plate, a silver-plated reflector and a first lens, the terahertz wave forms a terahertz wave collineation after successively passing through a second lens, a slab waveguide, a third lens and an ITO film, the terahertz wave collineation and the probe light form a probe light collineation of wavefront tilt which is perpendicularly incident on a ZnTe crystal and detected and recorded by using a CCD camera.

公开(公告)号：US09543462B2

公开(公告)日：2017-01-10

申请号：US15074512

申请日：2016-03-18

Applicant: Xi'an University of Technology ,  THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS

Inventor： Xinmei Wang ,  Sudip K. Mazumder ,  Wei Shi

IPC: H01L31/0352 ,  H01L31/119 ,  H01L27/144 ,  H01L23/482

CPC classification number: H01L31/119 ,  H01L23/4825 ,  H01L27/1443 ,  H01L31/035281 ,  Y02E10/50

Abstract: This present invention provides a novel photoconductive semiconductor switch (PCSS) comprising: a semi-insulating substrate, an anode formed on the upper surface of said semi-insulating substrate, a first n-type doped layer formed on the lower surface of said semi-insulating substrate, a p-type doped layer formed on said first n-type doped layer, a second n-type doped layer formed on said p-type doped layer, a cathode formed on said second n-type doped layer, several recesses facing towards said first n-type doped layer and vertically extending into a part of said first n-type doped layer, an insulating layer formed on said second n-type doped layer and on the walls and the bottoms of said recesses, a gate electrode consisting of two parts, one part of the which formed on said insulating layer on the walls and the bottoms of recesses, and the other part of the which formed on a part of the insulating layer on the second n-type doped layer for electrically connecting the part of the gate electrode on the recesses, wherein the cathode and the gate electrode are electrically isolated.

Abstract translation: 本发明提供了一种新型的光导半导体开关（PCSS），其包括：半绝缘基板，形成在所述半绝缘基板的上表面上的阳极，形成在所述半绝缘基板的下表面上的第一n型掺杂层， 绝缘衬底，形成在所述第一n型掺杂层上的p型掺杂层，形成在所述p型掺杂层上的第二n型掺杂层，形成在所述第二n型掺杂层上的阴极， 朝向所述第一n型掺杂层并且垂直延伸到所述第一n型掺杂层的一部分中的绝缘层，形成在所述第二n型掺杂层上以及所述凹部的壁和底部上的绝缘层， 的两部分，其一部分形成在所述绝缘层上的壁和凹部的底部上，而另一部分形成在第二n型掺杂层上的绝缘层的一部分上，用于电连接 一部分gat e电极，其中阴极和栅电极是电隔离的。