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公开(公告)号：US10978612B2
公开(公告)日：2021-04-13
申请号：US16716598
申请日：2019-12-17
发明人： Yung-Ling Lan , Chan-Chan Ling , Chi-Ming Tsai , Chia-Hung Chang
摘要： A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked second potential barrier layers and potential well layers. The first capping layer is a semiconductor layer and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has a band gap larger than that of each of the second potential barrier layers and the band gap of the first capping layer is larger than that of the electron barrier layer. A method of preparing the semiconductor light emitting device is also provided.
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公开(公告)号：US11189751B2
公开(公告)日：2021-11-30
申请号：US16655832
申请日：2019-10-17
发明人： Han Jiang , Yung-Ling Lan , Wen-Pin Huang , Changwei Song , Li-Cheng Huang , Feilin Xun , Chan-Chan Ling , Chi-Ming Tsai , Chia-Hung Chang
摘要： Disclosed is a multi-quantum well structure including a stress relief layer, an electron-collecting layer disposed on the stress relief layer, and an active layer including a first active layer unit that is disposed on the electron-collecting layer. The first active layer unit includes potential barrier sub-layers and potential well sub-layers being alternately stacked, in which at least one of the potential barrier sub-layers has a GaN/Alx1Iny1Ga(1-x1-y1)N/GaN stack, where 0
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公开(公告)号：US10115858B2
公开(公告)日：2018-10-30
申请号：US15871929
申请日：2018-01-15
摘要： A method of fabricating a light emitting diode includes providing a substrate, and forming successively an N-type layer, an active layer, an electronic blocking layer, and a P-type layer over the substrate. The P-type layer includes a Mg-doped GaN material layer having a Mg impurity concentration of about 2×1019-2×1020 cm−3; and has a thickness of less than or equal to about 250 Å, and has a surface density of V-type defects of less than or equal to about 5×106 cm−2. Through these optimized growth conditions for the P-type layer, the light absorption of the P-type layer can be reduced, the electric leakage due to the relatively large density of V-type defects on the surface can be reduced, and the anti-static capacity of the light emitting diode fabricated thereby can be improved.
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公开(公告)号：US11848401B2
公开(公告)日：2023-12-19
申请号：US18096628
申请日：2023-01-13
发明人： Yung-Ling Lan , Chan-Chan Ling , Chi-Ming Tsai , Chia-Hung Chang
摘要： A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.
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公开(公告)号：US11522106B2
公开(公告)日：2022-12-06
申请号：US16949639
申请日：2020-11-09
发明人： Yung-Ling Lan , Chan-Chan Ling , Chi-Ming Tsai
摘要： A nitride-based light-emitting diode (LED) device includes an n-type nitride semiconductor layer, an active layer that is disposed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer disposed on the active layer, and a defect control unit disposed between the n-type nitride semiconductor layer and the active layer. The defect control unit includes first, second and third defect control layers that are sequentially disposed on the n-type nitride semiconductor layer in such order, and that have different doping concentrations. The third defect control layer includes one of Al-containing ternary nitride, Al-containing quaternary nitride, and a combination thereof.
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公开(公告)号：US10535796B2
公开(公告)日：2020-01-14
申请号：US16426016
申请日：2019-05-30
发明人： Yung-Ling Lan , Chan-Chan Ling , Chi-Ming Tsai , Chia-Hung Chang
摘要： A semiconductor light emitting device includes a multi-quantum-well structure, a first potential barrier layer, a first capping layer, a second capping layer, and an electron barrier layer stacked in order on a growth substrate. The multi-quantum-well structure includes a plurality of alternately-stacked second potential barrier layers and potential well layers. The first capping layer is an undoped semiconductor layer and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has a band gap larger than that of each of the second potential barrier layers and the electron barrier layer. A method of preparing the semiconductor light emitting device is also provided.
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公开(公告)号：US11817528B2
公开(公告)日：2023-11-14
申请号：US17981088
申请日：2022-11-04
发明人： Yung-Ling Lan , Chan-Chan Ling , Chi-Ming Tsai
CPC分类号： H01L33/325 , H01L33/04
摘要： A nitride-based light-emitting diode (LED) device includes an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer disposed on the active layer, and a defect control unit disposed between the n-type nitride semiconductor layer and the active layer. The defect control unit includes first, second and third defect control layers that are sequentially disposed on the n-type nitride semiconductor layer, and that have different doping concentrations. The third defect control layer includes one of Al-containing ternary nitride, Al-containing quaternary nitride, and a combination thereof.
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公开(公告)号：US11557693B2
公开(公告)日：2023-01-17
申请号：US17209485
申请日：2021-03-23
发明人： Yung-Ling Lan , Chan-Chan Ling , Chi-Ming Tsai , Chia-Hung Chang
摘要： A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.
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