公开(公告)号：US10242958B2

公开(公告)日：2019-03-26

申请号：US15810076

申请日：2017-11-12

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Gaolin Zheng ,  Ling-yuan Hong ,  Xiaoxiong Lin ,  Feng Wang ,  Su-hui Lin ,  Chia-hung Chang

IPC: H01L21/00 ,  H01L27/00 ,  H01L33/00 ,  H01L23/60 ,  H01L27/15 ,  H01L33/38 ,  H01L33/62 ,  H01L33/64 ,  H01L33/44

Abstract: A fabrication method of a high-voltage light-emitting diode includes the steps of providing a substrate, and forming a light-emitting epitaxial laminated layer on the substrate; patterning the light-emitting epitaxial laminated layer and fabricating a channel that exposes the substrate surface so as to divide the light-emitting epitaxial laminated layer into a plurality of light-emitting diode units, and the light-emitting diode units at least constitute two rows; fabricating an electrode interconnection line crossing the channel, wherein, two adjacent light-emitting diode units are connected by the electrode interconnection line; fabricating an electrode bonding pad over the outmost light-emitting diode unit of the high-voltage light-emitting diode; and fabricating an insulating protective layer opening at the channel where the potential difference of any two adjacent light-emitting diodes is ≥3 times of the forward voltage of a single light-emitting diode to avoid breakdown of the light-emitting epitaxial laminated layer.

公开(公告)号：US12087885B2

公开(公告)日：2024-09-10

申请号：US17987001

申请日：2022-11-15

Applicant: Xiamen Sanan Optoelectronics Technology Co., LTD.

Inventor： Su-hui Lin ,  Feng Wang ,  Ling-yuan Hong ,  Sheng-Hsien Hsu ,  Sihe Chen ,  Dazhong Chen ,  Kang-Wei Peng ,  Chia-Hung Chang

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01L33/14

CPC classification number: H01L33/46 ,  H01L33/387 ,  H01L33/405 ,  H01L33/145 ,  H01L33/382 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

公开(公告)号：US11532769B2

公开(公告)日：2022-12-20

申请号：US16931056

申请日：2020-07-16

Applicant: Xiamen Sanan Optoelectronics Technology Co., LTD.

Inventor： Su-hui Lin ,  Feng Wang ,  Ling-yuan Hong ,  Sheng-Hsien Hsu ,  Sihe Chen ,  Dazhong Chen ,  Kang-Wei Peng ,  Chia-Hung Chang

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/40 ,  H01L33/14

Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.