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公开(公告)号：US10707380B2
公开(公告)日：2020-07-07
申请号：US16147763
申请日：2018-09-30
Inventor： Gaolin Zheng , Hou-Jun Wu , Anhe He , Shiwei Liu , Kang-Wei Peng , Su-Hui Lin , Chia-Hung Chang
Abstract: A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer disposed between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer; and a second electrode disposed over and electrically coupled to said second semiconductor layer; wherein: the first electrode includes a plurality of first sub-electrodes; the second electrode includes a plurality of second sub-electrodes; and any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance.
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公开(公告)号：US10825957B1
公开(公告)日：2020-11-03
申请号：US16887877
申请日：2020-05-29
Inventor： Gaolin Zheng , Hou-Jun Wu , Anhe He , Shiwei Liu , Kang-Wei Peng , Su-Hui Lin , Chia-Hung Chang
Abstract: A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer and including a plurality of first sub-electrodes, wherein the plurality of first sub-electrodes are divided into one or more groups, and any two adjacent first sub-electrodes in the same group have a same projection distance; a second electrode disposed over and electrically coupled to the second semiconductor layer; a third electrode coupled to the plurality of first sub-electrodes and including one or more third sub-electrodes, wherein one of the third sub-electrodes corresponds to one of said one or more groups of the first sub-electrodes and connects first sub-electrodes in the group; and a fourth electrode coupled to the second electrode.
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公开(公告)号：US10242958B2
公开(公告)日：2019-03-26
申请号：US15810076
申请日：2017-11-12
Inventor： Gaolin Zheng , Ling-yuan Hong , Xiaoxiong Lin , Feng Wang , Su-hui Lin , Chia-hung Chang
IPC: H01L21/00 , H01L27/00 , H01L33/00 , H01L23/60 , H01L27/15 , H01L33/38 , H01L33/62 , H01L33/64 , H01L33/44
Abstract: A fabrication method of a high-voltage light-emitting diode includes the steps of providing a substrate, and forming a light-emitting epitaxial laminated layer on the substrate; patterning the light-emitting epitaxial laminated layer and fabricating a channel that exposes the substrate surface so as to divide the light-emitting epitaxial laminated layer into a plurality of light-emitting diode units, and the light-emitting diode units at least constitute two rows; fabricating an electrode interconnection line crossing the channel, wherein, two adjacent light-emitting diode units are connected by the electrode interconnection line; fabricating an electrode bonding pad over the outmost light-emitting diode unit of the high-voltage light-emitting diode; and fabricating an insulating protective layer opening at the channel where the potential difference of any two adjacent light-emitting diodes is ≥3 times of the forward voltage of a single light-emitting diode to avoid breakdown of the light-emitting epitaxial laminated layer.
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公开(公告)号：US09312449B2
公开(公告)日：2016-04-12
申请号：US14641424
申请日：2015-03-08
Inventor： Lixun Yang , Junpeng Shi , Xinghua Liang , Gaolin Zheng , Zhibai Zhong , Shaohua Huang , Chih-Wei Chao
CPC classification number: H01L33/405 , H01L33/145 , H01L33/38 , H01L33/62
Abstract: An electrode structure for effectively improving the stability of a semiconductor LED includes a reflecting layer capable of current spreading. In such an electrode structure, the current injects from the side surface of the reflecting layer to form a certain potential gradient over the contact surface between the electrode and the LED contact surface, thereby inhibiting the metal ion of the reflecting layer from migration due to electric field during usage, thereby improving device stability. In addition, the electrode portion for current injection can include a high-reflectivity material yet not vulnerable to ion migration, thereby increasing the entire reflecting area and improving luminous efficiency.
Abstract translation: 用于有效提高半导体LED的稳定性的电极结构包括能够电流扩散的反射层。 在这样的电极结构中，电流从反射层的侧面注入电极和LED接触面之间的接触面上形成一定的电位梯度，从而抑制反射层的金属离子由于电 在使用期间，从而提高了设备的稳定性。 此外，用于电流注入的电极部分可以包括高反射率材料，但不易于离子迁移，从而增加整个反射面积并提高发光效率。
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