公开(公告)号：US20140251946A1

公开(公告)日：2014-09-11

申请号：US14282457

申请日：2014-05-20

Applicant: XINTEC INC.

Inventor： Yi-Ming CHANG ,  I-Min LIN ,  Po-Shen LIN

IPC: H05K3/06

CPC classification number: H05K3/06 ,  H01L21/4853 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76885 ,  H01L23/53238 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02317 ,  H01L2224/02319 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/1148 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2924/01029 ,  H01L2924/12041 ,  H01L2924/14 ,  H05K3/244 ,  H05K3/4007 ,  H05K2201/0367 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01079 ,  H01L2924/00

Abstract: A wiring structure for improving a crown-like defect and a fabrication method thereof are provided. The method includes the following steps. A substrate, on which a seed layer and a patterned photoresist layer with an opening are formed, is provided. A copper layer, having a bottom covering the seed layer, is formed in the opening. A barrier layer covering at least one top portion of the copper layer is formed on the copper layer. An oxidation potential of the barrier layer is greater than that of the copper layer. The patterned photoresist layer is removed to perform an etching process, wherein the copper layer and a portion of the seed layer exposed are etched to form a wiring layer. An immersion process is performed to form an anti-oxidation layer comprehensively on exposed surfaces of the barrier layer and the wiring layer.

Abstract translation: 提供了一种用于改善冠状缺陷的布线结构及其制造方法。 该方法包括以下步骤。 提供了其上形成有种子层和具有开口的图案化光致抗蚀剂层的衬底。 在开口中形成有覆盖种子层的底部的铜层。 覆盖铜层的至少一个顶部的阻挡层形成在铜层上。 阻挡层的氧化电位大于铜层的氧化电位。 去除图案化的光致抗蚀剂层以进行蚀刻工艺，其中铜层和暴露的种子层的一部分被蚀刻以形成布线层。 进行浸渍处理以在阻挡层和布线层的暴露表面上综合地形成抗氧化层。