公开(公告)号：US20140017828A1

公开(公告)日：2014-01-16

申请号：US14024564

申请日：2013-09-11

Applicant: XINTEC INC.

Inventor： Shang-Yi WU ,  Chien-Hui CHEN

IPC: H01L33/60

CPC classification number: H01L33/60 ,  H01L21/486 ,  H01L23/147 ,  H01L23/49827 ,  H01L33/44 ,  H01L33/486 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/73265 ,  H01L2933/0033 ,  H01S5/02236 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A method for fabricating a silicon submount for LED packaging. A silicon substrate is provided. A reflection layer is formed on the silicon substrate. Portions of the reflection layer and the silicon substrate are removed to form openings. A wafer backside grinding process is carried out to thin the silicon substrate thereby turning the openings into through silicon vias. An insulating layer is then deposited to cover the reflection layer and the silicon substrate. A seed layer is formed on the insulating layer. A resist pattern is then formed on the seed layer. A metal layer is formed on the seed layer not covered by the resist pattern. The resist pattern is then stripped. The seed layer not covered by the metal layer is then removed.

Abstract translation: 一种用于制造用于LED封装的硅基座的方法。 提供硅衬底。 在硅衬底上形成反射层。 去除反射层和硅衬底的部分以形成开口。 进行晶片背面研磨处理以使硅衬底变薄，从而将开口转变成通过硅通孔。 然后沉积绝缘层以覆盖反射层和硅衬底。 种子层形成在绝缘层上。 然后在种子层上形成抗蚀剂图案。 在未被抗蚀剂图案覆盖的种子层上形成金属层。 然后剥离抗蚀剂图案。 然后除去未被金属层覆盖的籽晶层。