公开(公告)号：US09397253B2

公开(公告)日：2016-07-19

申请号：US14369930

申请日：2013-01-07

Applicant: Xiamen Sanan Optoelectronics Technology Co., Ltd.

Inventor： Meng-Hsin Yeh ,  Jyh-Chiarng Wu ,  Shaohua Huang ,  Chi-Lun Chou

IPC: H01L21/337 ,  H01L33/00 ,  H01L33/32 ,  H01L33/40 ,  H01L33/64

CPC classification number: H01L33/0025 ,  H01L33/0075 ,  H01L33/32 ,  H01L33/325 ,  H01L33/40 ,  H01L33/64 ,  H01L2933/0016 ,  H01L2933/0075

Abstract: Disclosed are a light emitting diode having an n-doped ohm contact buffer layer and a manufacturing method therefor. In the present invention, a highly n-doped ohm contact buffer layer with an electronic concentration up to 1×1018 cm3 is formed on the n side of a light emitting epitaxy layer; when a growth substrate is removed, the n-type ohm contact buffer layer on the surface is exposed, which is a no-nitride polarity-face n-type GaN base material with a lower energy gap; an n-type ohm contact electrode is prepared on the n-type ohm contact buffer layer and follows the Ti/Al ohm contact electrode, which can overcome the problem of the existing vertical gallium nitride-based vertical light emitting diode that the voltage of the thin film GaN base light emitting device is unreliable because the ohm contact electrode on the nitride-face GaN base semiconductor layer is easy to crack due to temperature.

Abstract translation: 公开了具有n掺杂欧姆接触缓冲层的发光二极管及其制造方法。 在本发明中，在发光外延层的n侧形成电子浓度高达1×1018cm 3的高n掺杂欧姆接触缓冲层; 当去除生长衬底时，暴露表面上的n型欧姆接触缓冲层，其是具有较低能隙的无氮化物极性n型GaN基材料; 在n型欧姆接触缓冲层上制备n型欧姆接触电极，并遵循Ti / Al欧姆接触电极，可以克服现有的垂直氮化镓基垂直发光二极管的问题， 由于氮化物面GaN基半导体层上的欧姆接触电极由于温度容易破裂，所以薄膜GaN基发光器件是不可靠的。

公开(公告)号：US20150048379A1

公开(公告)日：2015-02-19

申请号：US14369930

申请日：2013-01-07

Applicant: Xiamen Sanan Optoelectronics Technology Co., Ltd.

Inventor： Meng-Hsin Yeh ,  Jyh-Chiarng Wu ,  Shaohua Huang ,  Chi-Lun Chou

IPC: H01L33/00 ,  H01L33/64 ,  H01L33/32

CPC classification number: H01L33/0025 ,  H01L33/0075 ,  H01L33/32 ,  H01L33/325 ,  H01L33/40 ,  H01L33/64 ,  H01L2933/0016 ,  H01L2933/0075

Abstract: Disclosed are a light emitting diode having an n-doped ohm contact buffer layer and a manufacturing method therefor. In the present invention, a highly n-doped ohm contact buffer layer with an electronic concentration up to 1×1018 cm3 is formed on the n side of a light emitting epitaxy layer; when a growth substrate is removed, the n-type ohm contact buffer layer on the surface is exposed, which is a no-nitride polarity-face n-type GaN base material with a lower energy gap; an n-type ohm contact electrode is prepared on the n-type ohm contact buffer layer and follows the Ti/Al ohm contact electrode, which can overcome the problem of the existing vertical gallium nitride-based vertical light emitting diode that the voltage of the thin film GaN base light emitting device is unreliable because the ohm contact electrode on the nitride-face GaN base semiconductor layer is easy to crack due to temperature.

Abstract translation: 公开了具有n掺杂欧姆接触缓冲层的发光二极管及其制造方法。 在本发明中，在发光外延层的n侧形成电子浓度高达1×1018cm 3的高n掺杂欧姆接触缓冲层; 当去除生长衬底时，暴露表面上的n型欧姆接触缓冲层，其是具有较低能隙的无氮化物极性n型GaN基材料; 在n型欧姆接触缓冲层上制备n型欧姆接触电极，并遵循Ti / Al欧姆接触电极，可以克服现有的垂直氮化镓基垂直发光二极管的问题， 由于氮化物面GaN基半导体层上的欧姆接触电极由于温度容易破裂，所以薄膜GaN基发光器件是不可靠的。