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公开(公告)号：US09312438B2
公开(公告)日：2016-04-12
申请号：US14719269
申请日：2015-05-21
Inventor： Wen-Yu Lin , Meng-Hsin Yeh , Kechuang Lin
CPC classification number: H01L33/14 , H01L27/156 , H01L33/0025 , H01L33/0075 , H01L33/06 , H01L33/32
Abstract: An epitaxial structure of light emitting diode with a current modulation layer, and more specifically, a high-resistivity material is injected to change the current conduction path, and implementation of the main structure is to grow a high-resistivity material (e.g., InxAlyGa1-x-yN) over the N-type conductive layer or the P-type conductive layer till part of current conduction path is exposed through high-temperature H2 in-situ etching in the reacting furnace and to grow the N-type or the P-type conductive layer for coverage. This design for forming a current modulation layer without second epitaxial growth provides the injected current with a better spreading path in the N-type conductive layer and the P-type conductive layer, which more effectively and uniformly injects the current to the active layer and improves luminous efficiency.
Abstract translation: 注入具有电流调制层的发光二极管的外延结构，更具体而言，注入高电阻率材料以改变电流传导路径，并且主要结构的实现是生长高电阻率材料（例如，In x Al y Ga 1- x-yN）在N型导电层或P型导电层之间，直到电流传导路径的一部分通过反应炉内的高温H2原位蚀刻暴露，并且生长N型或P-型导电层， 型导电层覆盖。 这种用于形成没有第二外延生长的电流调制层的设计在N型导电层和P型导电层中提供了更好的扩散路径的注入电流，其更有效地均匀地将电流注入到有源层并改善 发光效率。
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Patent Agency Ranking
公开(公告)号：US09397253B2
公开(公告)日：2016-07-19
申请号：US14369930
申请日：2013-01-07
Inventor： Meng-Hsin Yeh , Jyh-Chiarng Wu , Shaohua Huang , Chi-Lun Chou
IPC: H01L21/337 , H01L33/00 , H01L33/32 , H01L33/40 , H01L33/64
CPC classification number: H01L33/0025 , H01L33/0075 , H01L33/32 , H01L33/325 , H01L33/40 , H01L33/64 , H01L2933/0016 , H01L2933/0075
Abstract: Disclosed are a light emitting diode having an n-doped ohm contact buffer layer and a manufacturing method therefor. In the present invention, a highly n-doped ohm contact buffer layer with an electronic concentration up to 1×1018 cm3 is formed on the n side of a light emitting epitaxy layer; when a growth substrate is removed, the n-type ohm contact buffer layer on the surface is exposed, which is a no-nitride polarity-face n-type GaN base material with a lower energy gap; an n-type ohm contact electrode is prepared on the n-type ohm contact buffer layer and follows the Ti/Al ohm contact electrode, which can overcome the problem of the existing vertical gallium nitride-based vertical light emitting diode that the voltage of the thin film GaN base light emitting device is unreliable because the ohm contact electrode on the nitride-face GaN base semiconductor layer is easy to crack due to temperature.
Abstract translation: 公开了具有n掺杂欧姆接触缓冲层的发光二极管及其制造方法。 在本发明中，在发光外延层的n侧形成电子浓度高达1×1018cm 3的高n掺杂欧姆接触缓冲层; 当去除生长衬底时，暴露表面上的n型欧姆接触缓冲层，其是具有较低能隙的无氮化物极性n型GaN基材料; 在n型欧姆接触缓冲层上制备n型欧姆接触电极，并遵循Ti / Al欧姆接触电极，可以克服现有的垂直氮化镓基垂直发光二极管的问题， 由于氮化物面GaN基半导体层上的欧姆接触电极由于温度容易破裂，所以薄膜GaN基发光器件是不可靠的。
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公开(公告)号：US20150048379A1
公开(公告)日：2015-02-19
申请号：US14369930
申请日：2013-01-07
Inventor： Meng-Hsin Yeh , Jyh-Chiarng Wu , Shaohua Huang , Chi-Lun Chou
CPC classification number: H01L33/0025 , H01L33/0075 , H01L33/32 , H01L33/325 , H01L33/40 , H01L33/64 , H01L2933/0016 , H01L2933/0075
Abstract: Disclosed are a light emitting diode having an n-doped ohm contact buffer layer and a manufacturing method therefor. In the present invention, a highly n-doped ohm contact buffer layer with an electronic concentration up to 1×1018 cm3 is formed on the n side of a light emitting epitaxy layer; when a growth substrate is removed, the n-type ohm contact buffer layer on the surface is exposed, which is a no-nitride polarity-face n-type GaN base material with a lower energy gap; an n-type ohm contact electrode is prepared on the n-type ohm contact buffer layer and follows the Ti/Al ohm contact electrode, which can overcome the problem of the existing vertical gallium nitride-based vertical light emitting diode that the voltage of the thin film GaN base light emitting device is unreliable because the ohm contact electrode on the nitride-face GaN base semiconductor layer is easy to crack due to temperature.
Abstract translation: 公开了具有n掺杂欧姆接触缓冲层的发光二极管及其制造方法。 在本发明中，在发光外延层的n侧形成电子浓度高达1×1018cm 3的高n掺杂欧姆接触缓冲层; 当去除生长衬底时，暴露表面上的n型欧姆接触缓冲层，其是具有较低能隙的无氮化物极性n型GaN基材料; 在n型欧姆接触缓冲层上制备n型欧姆接触电极，并遵循Ti / Al欧姆接触电极，可以克服现有的垂直氮化镓基垂直发光二极管的问题， 由于氮化物面GaN基半导体层上的欧姆接触电极由于温度容易破裂，所以薄膜GaN基发光器件是不可靠的。
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公开(公告)号：US09705033B2
公开(公告)日：2017-07-11
申请号：US14531973
申请日：2014-11-03
Inventor： Meng-Hsin Yeh , Jyh-Chiarng Wu
CPC classification number: H01L33/14 , H01L33/0025 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/06 , H01L33/145 , H01L33/325
Abstract: A lighting emitting diode including: an n side layer and a p side layer formed by nitride semiconductors respectively; an active layer comprising a nitride semiconductor is between the n side layer and the p side layer; wherein, the n-side layer is successively laminated by an extrinsically-doped buffer layer and a compound multi-current spreading layer; the compound multi-current spreading layer is successively-laminated by a first current spreading layer, a second current spreading layer and a third current spreading layer; the first current spreading layer and the third current spreading layer are alternatively-laminated layers comprising a u-type nitride semiconductor layer and an n-type nitride semiconductor layer; the second current spreading layer is a distributed insulation layer formed on the n-type nitride semiconductor layer; and the first current spreading layer is adjacent to the extrinsically-doped buffer layer; and the third current spreading layer is adjacent to the active layer.
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公开(公告)号：US09570654B2
公开(公告)日：2017-02-14
申请号：US14742150
申请日：2015-06-17
Inventor： Wen-Yu Lin , Meng-Hsin Yeh , Zhibai Zhong
IPC: H01L33/00 , H01L33/22 , H01L33/44 , H01L25/075 , H01L27/15 , H01L33/06 , H01L33/24 , H01L33/32 , H01L33/12 , H01L21/02 , H01L33/20
CPC classification number: H01L33/22 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02488 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02658 , H01L25/0753 , H01L27/15 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/44 , H01L2924/0002 , H01L2933/0025 , H01L2924/00
Abstract: A nitride light-emitting diode including: a substrate with sub-micro patterns over the surface, which is divided into a growth region and a non-growth region; a growth blocking layer, formed in the non-growth region of the substrate for blocking epitaxial growth in the non-growth region of the substrate; a light-emitting epitaxial layer, comprising an n-type layer, a light-emitting layer and a p-type layer, formed in the growth region of the substrate, which extends to the non-growth region through lateral epitaxy and covers the growth blocking layer; wherein, the refractive index of the growth blocking layer is less than that of the light-emitting epitaxial layer and the growth blocking layer forms undulating morphology along the sub-micro patterns of the substrate, thus increasing light extraction interface of LED, generating refractive index difference between the light-emitting epitaxial layer and the light extraction interface and improving light extraction efficiency.
Abstract translation: 一种氮化物发光二极管，包括：表面上具有亚微细图案的基板，其分为生长区域和非生长区域; 生长阻挡层，形成在用于阻挡衬底的非生长区域中的外延生长的衬底的非生长区域中; 在衬底的生长区域中形成的n型层，发光层和p型层的发光外延层，其通过横向外延延伸到非生长区域并覆盖生长 阻挡层; 其中，生长阻挡层的折射率小于发光外延层的折射率，并且生长阻挡层沿着衬底的亚微观图案形成起伏的形态，因此增加LED的光提取界面，产生折射率 发光外延层和光提取界面之间的差异，并提高光提取效率。
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6.发明授权公开(公告)号：US09324907B2
公开(公告)日：2016-04-26
申请号：US13743728
申请日：2013-01-17
Inventor： Meng-Hsin Yeh , Jyh-Chiarng Wu , Guojun Lu
CPC classification number: H01L33/06 , H01L21/02507 , H01L29/15 , H01L33/007 , H01L33/0075
Abstract: A light emitting diode (LED) includes an active layer having one or more multilayer potential barriers and at least one well layer. Each multilayer potential barrier includes interlacing first and second InAlGaN thin layers. The first and second InAlGaN thin layers have compositions selected with respect to the well layer such that a polarization effect is substantially reduced.
Abstract translation: 发光二极管（LED）包括具有一个或多个多层势垒和至少一个阱层的有源层。 每个多层势垒包括隔行的第一和第二InAlGaN薄层。 第一和第二InAlGaN薄层具有相对于阱层选择的组成，使得极化效应显着降低。
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