DOWN-CONVERTED LIGHT SOURCE WITH UNIFORM WAVELENGTH EMISSION
    1.
    发明申请
    DOWN-CONVERTED LIGHT SOURCE WITH UNIFORM WAVELENGTH EMISSION 有权
    具有均匀波长发射的下变换光源

    公开(公告)号:US20100295057A1

    公开(公告)日:2010-11-25

    申请号:US12810052

    申请日:2008-12-09

    IPC分类号: H01L33/30 H01L33/44

    摘要: An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.

    摘要翻译: 光源的布置附着到半导体波长转换器。 每个光源以相应的峰值波长发光,并且光源的布置的特征在于峰值波长的第一范围。 半导体波长转换器的特征在于通过光源的排列泵浦时的第二峰值波长范围。 峰值波长的第二范围比峰值波长的第一范围窄。 半导体波长转换器的特征在于具有比光源的最长峰值波长长的波长的吸收边。 波长转换器还可以用于减小来自扩展光源的输出中的波长变化。

    Down-converted light source with uniform wavelength emission
    2.
    发明授权
    Down-converted light source with uniform wavelength emission 有权
    具有均匀波长发射的下变频光源

    公开(公告)号:US08338838B2

    公开(公告)日:2012-12-25

    申请号:US12810052

    申请日:2008-12-09

    IPC分类号: H01L33/00

    摘要: An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.

    摘要翻译: 光源的布置附着到半导体波长转换器。 每个光源以相应的峰值波长发光,并且光源的布置的特征在于峰值波长的第一范围。 半导体波长转换器的特征在于通过光源的排列泵浦时的第二峰值波长范围。 峰值波长的第二范围比峰值波长的第一范围窄。 半导体波长转换器的特征在于具有比光源的最长峰值波长长的波长的吸收边。 波长转换器还可以用于减小来自扩展光源的输出中的波长变化。

    RE-EMITTING SEMICONDUCTOR CARRIER DEVICES FOR USE WITH LEDS AND METHODS OF MANUFACTURE
    3.
    发明申请
    RE-EMITTING SEMICONDUCTOR CARRIER DEVICES FOR USE WITH LEDS AND METHODS OF MANUFACTURE 有权
    重新发射用于LED的半导体载体装置及其制造方法

    公开(公告)号:US20120097983A1

    公开(公告)日:2012-04-26

    申请号:US13264487

    申请日:2010-05-03

    IPC分类号: H01L33/60 H01L33/48

    摘要: Re-emitting semiconductor constructions (RSCs) for use with LEDs, and related devices, systems, and methods are disclosed. A method of fabrication includes providing a semiconductor substrate, forming on a first side of the substrate a semiconductor layer stack, attaching a carrier window to the stack, and removing the substrate after the attaching step. The stack includes an active region adapted to convert light at a first wavelength λ1 to visible light at a second wavelength λ2, the active region including at least a first potential well. The attaching step is carried out such that the stack is disposed between the substrate and the carrier window, which is transparent to the second wavelength λ2. The carrier window may also have a lateral dimension greater than that of the stack. The removal step is carried out so as to provide an RSC carrier device that includes the carrier window and the stack.

    摘要翻译: 公开了与LED一起使用的重新发射半导体结构(RSCs)以及相关的器件,系统和方法。 一种制造方法包括提供半导体衬底,在衬底的第一侧上形成半导体层堆叠,将载体窗口附接到堆叠,以及在附接步骤之后移除衬底。 所述堆叠包括适于将第一波长λ1的光转换成第二波长λ2的可见光的有源区,所述有源区至少包括第一势阱。 执行安装步骤使得堆叠被布置在对第二波长λ2透明的基板和载体窗口之间。 载体窗口也可以具有大于堆叠的横向尺寸的横向尺寸。 执行去除步骤以提供包括载体窗口和堆叠的RSC载体装置。

    "> ADAPTING SHORT-WAVELENGTH LED'S FOR POLYCHROMATIC, BROADBAND, OR
    6.
    发明申请
    ADAPTING SHORT-WAVELENGTH LED'S FOR POLYCHROMATIC, BROADBAND, OR "WHITE" EMISSION 有权
    适应短波长LED,用于多色,宽带或“白色”排放

    公开(公告)号:US20100155694A1

    公开(公告)日:2010-06-24

    申请号:US12715957

    申请日:2010-03-02

    IPC分类号: H01L33/04

    摘要: An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.

    摘要翻译: 提供了一种适配的LED,其包括短波长LED和再发射半导体结构,其中再发射半导体结构包括不位于pn结内的至少一个势阱。 势阱通常是量子阱。 适配的LED可以是白色或近白色的LED灯。 再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。 此外,提供了包括根据本发明的适配LED的图形显示装置和照明装置。

    "> ADAPTING SHORT-WAVELENGTH LED'S FOR POLYCHROMATIC, BROADBAND, OR
    7.
    发明申请
    ADAPTING SHORT-WAVELENGTH LED'S FOR POLYCHROMATIC, BROADBAND, OR "WHITE" EMISSION 失效
    适应短波长LED,用于多色,宽带或“白色”排放

    公开(公告)号:US20080272387A1

    公开(公告)日:2008-11-06

    申请号:US12174087

    申请日:2008-07-16

    IPC分类号: H01L33/00

    摘要: An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.

    摘要翻译: 提供了一种适配的LED,其包括短波长LED和再发射半导体结构,其中再发射半导体结构包括不位于pn结内的至少一个势阱。 势阱通常是量子阱。 适配的LED可以是白色或近白色的LED灯。 再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。 此外,提供了包括根据本发明的适配LED的图形显示装置和照明装置。

    ADAPTING SHORT-WAVELENGTH LED'S FOR POLYCHROMATIC, BROADBAND, OR WHITE EMISSION
    9.
    发明申请
    ADAPTING SHORT-WAVELENGTH LED'S FOR POLYCHROMATIC, BROADBAND, OR WHITE EMISSION 失效
    适应短波长LED,用于多色,宽带或白色排放

    公开(公告)号:US20080272362A1

    公开(公告)日:2008-11-06

    申请号:US12172549

    申请日:2008-07-14

    IPC分类号: H01L33/00

    摘要: An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.

    摘要翻译: 提供了一种适配的LED,其包括短波长LED和再发射半导体结构,其中再发射半导体结构包括不位于pn结内的至少一个势阱。 势阱通常是量子阱。 适配的LED可以是白色或近白色的LED灯。 再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。 此外,提供了包括根据本发明的适配LED的图形显示装置和照明装置。