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    Metal-insulator-metal (MIM) devices and their methods of fabrication
    1.
    发明授权
    Metal-insulator-metal (MIM) devices and their methods of fabrication 有权
    金属绝缘体金属（MIM）器件及其制造方法

    公开(公告)号：US08222077B2

    公开(公告)日：2012-07-17

    申请号：US11983205

    申请日：2007-11-06

    申请人： Xiong Gong ,  Kaixia Yang ,  Gang Yu ,  Boo Jorgen Larŝ Nilsson ,  Chan-Long Shieh ,  Hsing-Chung Lee ,  Fatt Foong

    发明人： Xiong Gong ,  Kaixia Yang ,  Gang Yu ,  Boo Jorgen Larŝ Nilsson ,  Chan-Long Shieh ,  Hsing-Chung Lee ,  Fatt Foong

    IPC分类号： H01L21/28

    CPC分类号： G02F1/1365 ,  G02F1/167 ,  H01G11/48 ,  H01G11/56 ,  H01L45/00 ,  Y02E60/13 ,  Y10S438/957

    摘要： Two-terminal switching devices of MIM type having at least one electrode formed by a liquid phase processing method are provided for use in active matrix backplane applications; more specifically, MIM devices with symmetric current-voltage characteristics are applied for LCD active matrix backplane applications, and MIM devices with asymmetric current-voltage characteristics are applied for active matrix backplane implementation for electrophoretic displays (EPD) and rotating element displays. In particular, the combination of the bottom metal, metal-oxide insulator and solution-processible top conducting layer enables high throughput, roll-to-roll process for flexible displays.

    摘要翻译： 提供具有通过液相处理方法形成的至少一个电极的MIM型的两端开关装置用于有源矩阵背板应用; 更具体地说，将具有对称电流 - 电压特性的MIM器件应用于LCD有源矩阵背板应用，并且将具有不对称电流 - 电压特性的MIM器件应用于电泳显示器（EPD）和旋转元件显示器的有源矩阵背板实施。 特别地，底部金属，金属氧化物绝缘体和可溶液加工的顶部导电层的组合可实现灵活显示器的高生产率，卷对卷过程。

    Anodization of gate with laser vias and cuts
    3.
    发明授权
    Anodization of gate with laser vias and cuts 有权
    带激光通孔和切口的阳极氧化

    公开(公告)号：US08936973B1

    公开(公告)日：2015-01-20

    申请号：US14080143

    申请日：2013-11-14

    申请人： Gang Yu ,  Chan-Long Shieh ,  Kaixia Yang

    发明人： Gang Yu ,  Chan-Long Shieh ,  Kaixia Yang

    IPC分类号： H01L21/00 ,  H01L29/49 ,  H01L29/66

    CPC分类号： H01L29/4908 ,  H01L21/28008 ,  H01L29/66969 ,  H01L29/7869

    摘要： A method of forming a gate dielectric in each MOTFT of an active matrix includes depositing a layer of gate metal on a substrate and patterning the gate metal to define a matrix of MOTFTs each including a gate electrode with all gate electrodes in each column connected together by a gate metal line and the line in each column connected at one end to the line in the next adjacent column by a gate metal bridging portion. The gate metal is anodized to form a layer of gate dielectric material. A layer of semiconductor metal oxide is deposited over the anodized gate metal and patterned to define an active layer for each MOTFT. Source/drain electrodes are formed on the layer of metal oxide for each MOTFT, and a laser is used to cut the bridging portion electrically connecting each gate metal line to the next adjacent gate metal line.

    摘要翻译： 在有源矩阵的每个MOTFT中形成栅极电介质的方法包括在衬底上沉积栅极金属层并且图案化栅极金属以形成MOTFT的矩阵，每个MOTFT包括栅极，每个栅极中的所有栅电极通过 栅极金属线，并且每列中的线在一端通过栅极金属桥接部分连接到下一相邻列中的线。 栅极金属被阳极化以形成栅极电介质材料层。 一层半导体金属氧化物沉积在阳极氧化的栅极金属上，并被图案化以限定每个MOTFT的有源层。 在每个MOTFT的金属氧化物层上形成源极/漏极，并且使用激光来切割将每个栅极金属线电连接到下一个相邻栅极金属线的桥接部分。