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    Metal-insulator-metal (MIM) devices and their methods of fabrication
    1.
    发明授权
    Metal-insulator-metal (MIM) devices and their methods of fabrication 有权
    金属绝缘体金属（MIM）器件及其制造方法

    公开(公告)号：US08222077B2

    公开(公告)日：2012-07-17

    申请号：US11983205

    申请日：2007-11-06

    申请人： Xiong Gong ,  Kaixia Yang ,  Gang Yu ,  Boo Jorgen Larŝ Nilsson ,  Chan-Long Shieh ,  Hsing-Chung Lee ,  Fatt Foong

    发明人： Xiong Gong ,  Kaixia Yang ,  Gang Yu ,  Boo Jorgen Larŝ Nilsson ,  Chan-Long Shieh ,  Hsing-Chung Lee ,  Fatt Foong

    IPC分类号： H01L21/28

    CPC分类号： G02F1/1365 ,  G02F1/167 ,  H01G11/48 ,  H01G11/56 ,  H01L45/00 ,  Y02E60/13 ,  Y10S438/957

    摘要： Two-terminal switching devices of MIM type having at least one electrode formed by a liquid phase processing method are provided for use in active matrix backplane applications; more specifically, MIM devices with symmetric current-voltage characteristics are applied for LCD active matrix backplane applications, and MIM devices with asymmetric current-voltage characteristics are applied for active matrix backplane implementation for electrophoretic displays (EPD) and rotating element displays. In particular, the combination of the bottom metal, metal-oxide insulator and solution-processible top conducting layer enables high throughput, roll-to-roll process for flexible displays.

    摘要翻译： 提供具有通过液相处理方法形成的至少一个电极的MIM型的两端开关装置用于有源矩阵背板应用; 更具体地说，将具有对称电流 - 电压特性的MIM器件应用于LCD有源矩阵背板应用，并且将具有不对称电流 - 电压特性的MIM器件应用于电泳显示器（EPD）和旋转元件显示器的有源矩阵背板实施。 特别地，底部金属，金属氧化物绝缘体和可溶液加工的顶部导电层的组合可实现灵活显示器的高生产率，卷对卷过程。

    HIGH MOBILITY STABILE METAL OXIDE TFT
    5.
    发明申请
    HIGH MOBILITY STABILE METAL OXIDE TFT 有权
    高移动性稳定的金属氧化物薄膜

    公开(公告)号：US20140001462A1

    公开(公告)日：2014-01-02

    申请号：US13536641

    申请日：2012-06-28

    申请人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong ,  Tian Xiao ,  Juergen Musolf

    发明人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong ,  Tian Xiao ,  Juergen Musolf

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/7869 ,  H01L21/467 ,  H01L21/4763 ,  H01L23/535 ,  H01L29/0649 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78696

    摘要： A method of fabricating a stable, high mobility metal oxide thin film transistor includes the steps of providing a substrate, positioning a gate on the substrate, and depositing a gate dielectric layer on the gate and portions of the substrate not covered by the gate. A multiple film active layer including a metal oxide semiconductor film and a metal oxide passivation film is deposited on the gate dielectric with the passivation film positioned in overlying relationship to the semiconductor film. An etch-stop layer is positioned on a surface of the passivation film and defines a channel area in the active layer. A portion of the multiple film active layer on opposite sides of the etch-stop layer is modified to form an ohmic contact and metal source/drain contacts are positioned on the modified portion of the multiple film active layer.

    摘要翻译： 一种制造稳定的高迁移率金属氧化物薄膜晶体管的方法包括以下步骤：提供衬底，将栅极定位在衬底上，以及在栅极上沉积栅极电介质层，并且将衬底部分未被栅极覆盖。 包括金属氧化物半导体膜和金属氧化物钝化膜的多层膜活性层沉积在栅极电介质上，钝化膜位于与半导体膜的重叠关系中。 蚀刻停止层位于钝化膜的表面上并限定有源层中的沟道区。 在蚀刻停止层的相对侧上的多个膜有源层的一部分被修改以形成欧姆接触，并且金属源极/漏极触点位于多个膜有源层的修改部分上。

    Self-aligned metal oxide TFT with reduced number of masks
    6.
    发明授权
    Self-aligned metal oxide TFT with reduced number of masks 有权
    具有减少掩模数量的自对准金属氧化物TFT

    公开(公告)号：US08273600B2

    公开(公告)日：2012-09-25

    申请号：US13195882

    申请日：2011-08-02

    申请人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong

    发明人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong

    IPC分类号： H01L21/00

    CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565

    摘要： A method of fabricating MOTFTs on transparent substrates by positioning opaque gate metal on the substrate front surface and depositing gate dielectric material overlying the gate metal and a surrounding area and metal oxide semiconductor material on the dielectric material. Depositing selectively removable etch stop material on the semiconductor material and photoresist on the etch stop material to define an isolation area in the semiconductor material. Removing uncovered portions of the etch stop. Exposing the photoresist from the substrate rear surface using the gate metal as a mask and removing exposed portions leaving the etch stop material overlying the gate metal covered. Etching the semiconductor material to isolate the TFT. Selectively etching the etch stop layer to leave a portion overlying the gate metal defining a channel area. Depositing and patterning conductive material to form source and drain areas on opposed sides of the channel area.

    摘要翻译： 一种在透明基板上制造MOTFT的方法，该方法是将不透明栅极金属定位在衬底前表面上，并沉积覆盖在栅极金属上的栅介质材料以及介电材料上的周围区域和金属氧化物半导体材料。 在半导体材料和蚀刻停止材料上的光致抗蚀剂上沉积选择性可移除的蚀刻停止材料以限定半导体材料中的隔离区域。 去除蚀刻停止件的未覆盖部分。 使用栅极金属作为掩模从基板后表面露出光致抗蚀剂，并去除暴露部分，留下覆盖栅极金属的蚀刻停止材料。 蚀刻半导体材料以隔离TFT。 选择性地蚀刻蚀刻停止层以留下覆盖栅极金属的部分限定沟道区域。 沉积和图案化导电材料以在通道区域的相对侧上形成源区和漏区。

    METAL OXIDE TFT WITH IMPROVED SOURCE/DRAIN CONTACTS AND RELIABILITY
    7.
    发明申请
    METAL OXIDE TFT WITH IMPROVED SOURCE/DRAIN CONTACTS AND RELIABILITY 有权
    具有改进的源/漏联系和可靠性的金属氧化物薄膜

    公开(公告)号：US20170033227A1

    公开(公告)日：2017-02-02

    申请号：US15225592

    申请日：2016-08-01

    申请人： Gang Yu ,  Chan-Long Shieh ,  Tian Xiao ,  Fatt Foong

    发明人： Gang Yu ,  Chan-Long Shieh ,  Tian Xiao ,  Fatt Foong

    IPC分类号： H01L29/786 ,  H01L23/00 ,  H01L23/31 ,  H01L29/49

    CPC分类号： H01L29/7869 ,  H01L21/321 ,  H01L21/324 ,  H01L21/383 ,  H01L21/428 ,  H01L21/44 ,  H01L21/47635 ,  H01L21/477 ,  H01L21/823418 ,  H01L23/3171 ,  H01L23/564 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in regions of the metal oxide semiconductor not covered by the etch stop layer, on which overlying and spaced apart source/drain metals are formed. Subsequently heating the transistor in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to a desired level. Providing additional passivation layer(s) on top of the transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.

    摘要翻译： 一种方法，包括提供具有栅极的衬底，与栅极相邻的栅极绝缘体材料层和位于与栅极相对的栅极绝缘体上的金属氧化物半导体材料层，形成选择性图案化的蚀刻停止钝化层并在高温下加热 在含氧或含氮或惰性气氛中选择性地增加未被蚀刻停止层覆盖的金属氧化物半导体的区域中的载流子浓度，其上形成有上层和间隔开的源极/漏极金属。 随后在含氧或含氮或惰性气氛中加热晶体管，以进一步改善源极/漏极接触，并将阈值电压调节到期望的水平。 在晶体管的顶部提供额外的钝化层，具有电气绝缘和对周围环境中的潮湿和化学物质的阻隔性能。

    SELF-ALIGNED METAL OXIDE TFT WITH REDUCED NUMBER OF MASKS AND WITH REDUCED POWER CONSUMPTION
    9.
    发明申请
    SELF-ALIGNED METAL OXIDE TFT WITH REDUCED NUMBER OF MASKS AND WITH REDUCED POWER CONSUMPTION 有权
    自对准金属氧化物膜，具有减少数量的掩模和降低功耗

    公开(公告)号：US20160204278A1

    公开(公告)日：2016-07-14

    申请号：US15080231

    申请日：2016-03-24

    申请人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong

    发明人： Chan-Long Shieh ,  Gang Yu ,  Fatt Foong

    IPC分类号： H01L29/786 ,  H01L27/12

    CPC分类号： H01L29/78696 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/707 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

    摘要： A method of fabricating MO TFTs includes positioning opaque gate metal on a transparent substrate to define a gate area. Depositing gate dielectric material overlying the gate metal and a surrounding area, and depositing metal oxide semiconductor material thereon. Depositing etch stop material on the semiconductor material. Positioning photoresist defining an isolation area in the semiconductor material, the etch stop material and the photoresist being selectively removable. Exposing the photoresist from the rear surface of the substrate and removing exposed portions to leave the etch stop material uncovered except for a portion overlying and aligned with the gate metal. Etching uncovered portions of the semiconductor material to isolate the TFT. Using the photoresist, selectively etching the etch stop layer to leave a portion overlying and aligned with the gate metal and defining a channel area in the semiconductor material. Depositing and patterning conductive material to form source and drain areas.

    摘要翻译： 一种制造MO TFT的方法包括将不透明栅极金属定位在透明基板上以限定栅极区域。 覆盖栅极金属和周围区域的沉积栅介质材料，以及在其上沉积金属氧化物半导体材料。 在半导体材料上沉积蚀刻停止材料。 定义在半导体材料中限定隔离区域的光致抗蚀剂，蚀刻停止材料和光致抗蚀剂可选择性地移除。 从基板的后表面露出光致抗蚀剂，除去暴露的部分以使蚀刻停止材料未被覆盖，除了覆盖并与栅极金属对准的部分之外。 蚀刻半导体材料的未覆盖部分以隔离TFT。 使用光致抗蚀剂，选择性地蚀刻蚀刻停止层以留下覆盖并与栅极金属对准的部分并限定半导体材料中的沟道区域。 沉积和图案化导电材料以形成源区和漏区。