公开(公告)号：US20050276098A1

公开(公告)日：2005-12-15

申请号：US10865722

申请日：2004-06-09

申请人： Hsu Yang ,  Xizeng Shi ,  Po-Kang Wang ,  Bruce Yang

发明人： Hsu Yang ,  Xizeng Shi ,  Po-Kang Wang ,  Bruce Yang

IPC分类号： B01F15/02 ,  G11C11/00 ,  G11C11/16

CPC分类号： G11C11/16

摘要： A method and system for providing a magnetic memory including magnetic memory cells associated with a word line segment is disclosed. The magnetic memory cell includes a magnetic storage device and an isolation device. The isolation device is coupled to the magnetic tunneling junction and with a combined word line for reading and writing to the magnetic memory cell. The magnetic storage device and the isolation device are configured such that no direct current path to ground exists during the writing to the magnetic memory cell. In one aspect, in a write mode, the combined word line associated with the word line segment and the word line segment are activated. In the read mode, at least a portion of the memory cells associated with the word line segment are selected using the combined word line.

摘要翻译： 公开了一种用于提供包括与字线段相关联的磁存储单元的磁存储器的方法和系统。 磁存储单元包括磁存储装置和隔离装置。 隔离装置耦合到磁性隧道结，并具有用于读取和写入磁性存储器单元的组合字线。 磁存储装置和隔离装置被配置成使得在写入磁存储单元期间不存在直接到地面的地面路径。 一方面，在写入模式中，与字线段和字线段相关联的组合字线被激活。 在读取模式中，使用组合字线来选择与字线段相关联的至少一部分存储单元。

公开(公告)号：US20070171702A1

公开(公告)日：2007-07-26

申请号：US11339189

申请日：2006-01-25

申请人： Xizeng Shi ,  Po-Kang Wang ,  Hsu Yang

发明人： Xizeng Shi ,  Po-Kang Wang ,  Hsu Yang

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： An MRAM array has a plurality of MRAM devices that are arranged in rows and columns with segmented word lines. A magnetic biasing field is coupled to each of the MRAM devices. The MRAM devices are programmed by providing a bidirectional bit line current to a selected bit line of the plurality of bit lines and a word line current pulse to one word line segment of one row of word line segments by discharging coupled word line segments. The field biasing device may be permanent magnetic layers or write biasing lines in proximity to the fixed magnetic layer of each of the MRAM and has a magnetic orientation equivalent to the magnetic orientation of a word line segment magnetic field generated by the word line current pulse.

摘要翻译： MRAM阵列具有多个以分段字线排列成行和列的MRAM器件。 磁偏置场耦合到每个MRAM器件。 MRAM器件通过向多个位线的选定位线提供双向位线电流，并通过对耦合的字线段进行放电而将字线电流脉冲提供给一行字线段的一个字线段。 励磁偏置装置可以是永久磁性层或者写入偏置线，靠近每个MRAM的固定磁性层，并且具有与由字线电流脉冲产生的字线段磁场的磁性取向相当的磁性取向。

公开(公告)号：US20080094884A1

公开(公告)日：2008-04-24

申请号：US12002161

申请日：2007-12-14

申请人： Hsu Yang ,  Po-Kang Wang ,  Xizeng Shi

发明人： Hsu Yang ,  Po-Kang Wang ,  Xizeng Shi

IPC分类号： G11C11/00

CPC分类号： G11C7/14 ,  G11C11/16

摘要： An MRAM reference cell sub-array provides a mid-point reference current to sense amplifiers. The MRAM reference cell sub-array has MRAM cells arranged in rows and columns. Bit lines are associated with each column of the sub-array. A coupling connects the bit lines of pairs of the columns together at a location proximally to the sense amplifiers. The MRAM cells of a first of the pair of columns are programmed to a first magneto-resistive state and the MRAM cells of a second of the pair of columns are programmed to a second magneto-resistive state. When one row of data MRAM cells is selected for reading, a row of paired MRAM reference cells are placed in parallel to generate the mid-point reference current for sensing. The MRAM reference sub-array may be programmed electrically or aided by a magnetic field. A method for verifying programming of the MRAM reference sub-array is discussed.

摘要翻译： MRAM参考单元子阵列提供了一个中点参考电流来检测放大器。 MRAM参考单元子阵列具有以行和列排列的MRAM单元。 位线与子阵列的每一列相关联。 耦合将位列对的位线连接到读出放大器的近端位置。 一对列中的第一列的MRAM单元被编程为第一磁阻状态，并且该对列中的第二对的MRAM单元被编程为第二磁阻状态。 当选择一行数据MRAM单元进行读取时，并行放置一对配对的MRAM参考单元，以生成用于检测的中点参考电流。 MRAM参考子阵列可以被电场编程或由磁场辅助。 讨论了一种用于验证MRAM参考子阵列的编程的方法。

公开(公告)号：US20070115717A1

公开(公告)日：2007-05-24

申请号：US11284299

申请日：2005-11-21

申请人： Hsu Yang ,  Po-Kang Wang ,  Xizeng Shi

发明人： Hsu Yang ,  Po-Kang Wang ,  Xizeng Shi

IPC分类号： G11C11/14

CPC分类号： G11C7/14 ,  G11C11/16

摘要： An MRAM reference cell sub-array provides a mid-point reference current to sense amplifiers. The MRAM reference cell sub-array has MRAM cells arranged in rows and columns. Bit lines are associated with each column of the sub-array. A coupling connects the bit lines of pairs of the columns together at a location proximally to the sense amplifiers. The MRAM cells of a first of the pair of columns are programmed to a first magneto-resistive state and the MRAM cells of a second of the pair of columns are programmed to a second magneto-resistive state. When one row of data MRAM cells is selected for reading, a row of paired MRAM reference cells are placed in parallel to generate the mid-point reference current for sensing. The MRAM reference sub-array may be programmed electrically or aided by a magnetic field. A method for verifying programming of the MRAM reference sub-array is discussed.

摘要翻译： MRAM参考单元子阵列提供了一个中点参考电流来检测放大器。 MRAM参考单元子阵列具有以行和列排列的MRAM单元。 位线与子阵列的每一列相关联。 耦合将位列对的位线连接到读出放大器的近端位置。 一对列中的第一列的MRAM单元被编程为第一磁阻状态，并且该对列中的第二对的MRAM单元被编程为第二磁阻状态。 当选择一行数据MRAM单元进行读取时，并行放置一对配对的MRAM参考单元，以生成用于检测的中点参考电流。 MRAM参考子阵列可以被电场编程或由磁场辅助。 讨论了一种用于验证MRAM参考子阵列的编程的方法。

公开(公告)号：US20060221673A1

公开(公告)日：2006-10-05

申请号：US11093613

申请日：2005-03-30

申请人： Hsu Yang ,  Po-Kang Wang ,  Xizeng Shi

发明人： Hsu Yang ,  Po-Kang Wang ,  Xizeng Shi

IPC分类号： G11C11/00

CPC分类号： G11C8/14 ,  G11C11/15

摘要： In an MRAM array based on MTJs, the size of segmented word line select transistors and their associated connections become a significant overhead, especially when the operating point is chosen deep along the hard axis of the asteroid curve. This problem has been overcome by placing the big segmented word line select transistors under the MTJ array and reducing the overall MRAM cell array down to a level comparable to a simple Cross Point MRAM array.

摘要翻译： 在基于MTJ的MRAM阵列中，分段字线选择晶体管及其相关连接的大小成为显着的开销，特别是当沿着小行星曲线的硬轴选择工作点时。 通过将大分段字线选择晶体管放置在MTJ阵列之下并将整个MRAM单元阵列降低到与简单的交叉点MRAM阵列相当的水平，已经克服了这个问题。

公开(公告)号：US20050276100A1

公开(公告)日：2005-12-15

申请号：US10865717

申请日：2004-06-09

申请人： Hsu Yang ,  Xizeng Shi ,  Po-Kang Wang ,  Bruce Yang

发明人： Hsu Yang ,  Xizeng Shi ,  Po-Kang Wang ,  Bruce Yang

IPC分类号： G06F12/00 ,  G11C8/14 ,  G11C11/14 ,  G11C11/15

CPC分类号： G11C11/15 ,  G11C8/14

摘要： A method and system for programming and reading a magnetic memory is disclosed. The magnetic memory includes a plurality of selectable word line segments and a plurality of magnetic storage cells corresponding to each word line segment. The method and system include reading the magnetic storage cells corresponding to a word line segment to determine a state of each magnetic storage cell. In one aspect, the method and system also include utilizing at least one storage for storing a state of each of the magnetic storage cells determined during a read operation made during a write operation. The method and system also include writing data to a portion of the magnetic cells corresponding to the word line segment after the reading. The method and system also include rewriting the state to each of a remaining portion of the magnetic storage cells corresponding to the word line segment at substantially the same time as the portion of the magnetic cells are written.

摘要翻译： 公开了一种用于编程和读取磁存储器的方法和系统。 磁存储器包括多个可选字线段和对应于每个字线段的多个磁存储单元。 该方法和系统包括读取对应于字线段的磁存储单元以确定每个磁存储单元的状态。 一方面，该方法和系统还包括利用至少一个存储器来存储在写入操作期间进行的读取操作期间确定的每个磁存储单元的状态。 该方法和系统还包括在读取之后将数据写入对应于字线段的磁性单元的一部分。 所述方法和系统还包括将所述状态重写为与写入所述磁性单元的所述部分基本相同的时间对应于所述字线段的所述磁存储单元的剩余部分。

公开(公告)号：US20070140033A1

公开(公告)日：2007-06-21

申请号：US11313019

申请日：2005-12-20

申请人： Hsu Yang ,  Po-Kang Wang ,  Xizeng Shi

发明人： Hsu Yang ,  Po-Kang Wang ,  Xizeng Shi

IPC分类号： G11C11/06

CPC分类号： G11C29/02 ,  G11C7/20 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C29/021 ,  G11C29/023 ,  G11C29/028 ,  G11C29/50012

摘要： A configurable MRAM device is achieved. The device comprises a memory array of magnetic memory cells. A first part of the array comprises the memory cells that can be accessed for reading and writing during normal operation. A second part of the array comprises the memory cells that can be read only during a power up initialization. The second part of the array is used to store configuration data for altering the physical operation of the memory array. Programmable current sources and timing delays use the stored configuration data to optimize device performance. A redundant section of memory cells is activated by the configuration data.

摘要翻译： 实现了可配置的MRAM设备。 该装置包括磁存储单元的存储器阵列。 该阵列的第一部分包括可在正常操作期间被读取和写入的存储器单元。 阵列的第二部分包括只能在上电初始化期间读取的存储器单元。 数组的第二部分用于存储用于更改存储器阵列的物理操作的配置数据。 可编程电流源和定时延迟使用存储的配置数据来优化设备性能。 存储器单元的冗余部分由配置数据激活。

公开(公告)号：US08728825B2

公开(公告)日：2014-05-20

申请号：US13417398

申请日：2012-03-12

申请人： Po-Kang Wang ,  Xizeng Shi ,  Chyu-Jiuh Torng

发明人： Po-Kang Wang ,  Xizeng Shi ,  Chyu-Jiuh Torng

IPC分类号： G01N27/00

CPC分类号： G01R33/0052 ,  B82Y25/00 ,  G01N15/0656 ,  G01N27/745 ,  G01N2015/0065 ,  G01R33/05 ,  G01R33/093 ,  G01R33/098 ,  Y10T29/49124 ,  Y10T29/49986

摘要： A GMR sensor stripe provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor stripe free layer is eliminated by a combination of biasing the sensor stripe along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By connecting the stripes in an array and making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.

摘要翻译： GMR传感器条带提供用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。 通过将传感器条沿其纵向而不是通常的横向方向偏置并通过使用外涂层应力和组合来消除滞后对传感器无条纹层的磁矩的稳定偏置点的维持的不利影响 磁层的磁致伸缩产生补偿横向磁各向异性。 通过将条纹连接在阵列中，使得条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，增强了传感器阵列的灵敏度。

公开(公告)号：US07499314B2

公开(公告)日：2009-03-03

申请号：US12002161

申请日：2007-12-14

申请人： Hsu Kai Yang ,  Po-Kang Wang ,  Xizeng Shi

发明人： Hsu Kai Yang ,  Po-Kang Wang ,  Xizeng Shi

IPC分类号： G11C11/00

CPC分类号： G11C7/14 ,  G11C11/16

摘要： An MRAM reference cell sub-array provides a mid-point reference current to sense amplifiers. The MRAM reference cell sub-array has MRAM cells arranged in rows and columns. Bit lines are associated with each column of the sub-array. A coupling connects the bit lines of pairs of the columns together at a location proximally to the sense amplifiers. The MRAM cells of a first of the pair of columns are programmed to a first magneto-resistive state and the MRAM cells of a second of the pair of columns are programmed to a second magneto-resistive state. When one row of data MRAM cells is selected for reading, a row of paired MRAM reference cells are placed in parallel to generate the mid-point reference current for sensing. The MRAM reference sub-array may be programmed electrically or aided by a magnetic field. A method for verifying programming of the MRAM reference sub-array is discussed.

摘要翻译： MRAM参考单元子阵列提供了一个中点参考电流来检测放大器。 MRAM参考单元子阵列具有以行和列排列的MRAM单元。 位线与子阵列的每一列相关联。 耦合将位列对的位线连接到读出放大器的近端位置。 一对列中的第一列的MRAM单元被编程为第一磁阻状态，并且该对列中的第二对的MRAM单元被编程为第二磁阻状态。 当选择一行数据MRAM单元进行读取时，并行放置一对配对的MRAM参考单元，以生成用于检测的中点参考电流。 MRAM参考子阵列可以被电场编程或由磁场辅助。 讨论了一种用于验证MRAM参考子阵列的编程的方法。

公开(公告)号：US07321507B2

公开(公告)日：2008-01-22

申请号：US11284299

申请日：2005-11-21

申请人： Hsu Kai Yang ,  Po-Kang Wang ,  Xizeng Shi

发明人： Hsu Kai Yang ,  Po-Kang Wang ,  Xizeng Shi

IPC分类号： G11C7/00

CPC分类号： G11C7/14 ,  G11C11/16

摘要： An MRAM reference cell sub-array provides a mid-point reference current to sense amplifiers. The MRAM reference cell sub-array has MRAM cells arranged in rows and columns. Bit lines are associated with each column of the sub-array. A coupling connects the bit lines of pairs of the columns together at a location proximally to the sense amplifiers. The MRAM cells of a first of the pair of columns are programmed to a first magneto-resistive state and the MRAM cells of a second of the pair of columns are programmed to a second magneto-resistive state. When one row of data MRAM cells is selected for reading, a row of paired MRAM reference cells are placed in parallel to generate the mid-point reference current for sensing. The MRAM reference sub-array may be programmed electrically or aided by a magnetic field. A method for verifying programming of the MRAM reference sub-array is discussed.